Patent application number | Description | Published |
20120007145 | ASYMMETRIC CHANNEL MOSFET - A field effect transistor includes a partial SiGe channel, i.e., a channel including a SiGe channel portion, located underneath a gate electrode and a Si channel portion located underneath an edge of the gate electrode near the drain region. The SiGe channel portion can be located directly underneath a gate dielectric, or can be located underneath a Si channel layer located directly underneath a gate dielectric. The Si channel portion is located at the same depth as the SiGe channel portion, and contacts the drain region of the transistor. By providing a Si channel portion near the drain region, the GIDL current of the transistor is maintained at a level on par with the GIDL current of a transistor having a silicon channel only during an off state. | 01-12-2012 |
20120190160 | ASYMMETRIC CHANNEL MOSFET - A field effect transistor includes a partial SiGe channel, i.e., a channel including a SiGe channel portion, located underneath a gate electrode and a Si channel portion located underneath an edge of the gate electrode near the drain region. The SiGe channel portion can be located directly underneath a gate dielectric, or can be located underneath a Si channel layer located directly underneath a gate dielectric. The Si channel portion is located at the same depth as the SiGe channel portion, and contacts the drain region of the transistor. By providing a Si channel portion near the drain region, the GIDL current of the transistor is maintained at a level on par with the GIDL current of a transistor having a silicon channel only during an off state. | 07-26-2012 |
20130285138 | Method of Fabricating Tunnel Transistors With Abrupt Junctions - A method of manufacturing a tunnel field effect transistor (TFET) includes forming on a substrate covered by an epitaxially grown source material a dummy gate stack surrounded by sidewall spacers; forming doped source and drain regions followed by forming an inter-layer dielectric surrounding the sidewall spacers; removing the dummy gate stack, etching a self-aligned cavity; epitaxially growing a thin channel region within the self-aligned etch cavity; conformally depositing gate dielectric and metal gate materials within the self-aligned etch cavity; and planarizing the top surface of the replacement metal gate stack to remove the residues of the gate dielectric and metal gate materials. | 10-31-2013 |
20140300398 | PROGRAMMABLE DELAY CIRCUIT - A delay circuit includes at least one main inverter configured to receive an input signal and output a delayed output signal and at least one switchable inverter connected in parallel with the main inverter circuit. The switchable inverter is configured to decrease a delay between the input signal and the delayed output signal based on the switchable inverter being turned on. | 10-09-2014 |
20140320217 | PROGRESSIVELY SIZED DIGITALLY-CONTROLLED OSCILLATOR - A digitally-controlled oscillator includes a base frequency generator having an odd number of base inverters connected end-to-end to generate an output signal that oscillates at a predetermined frequency and a frequency-adjusting unit connected to the base frequency generator. The frequency-adjusting unit includes a first string of switchable inverters connected in series with each other, the switchable inverters having sizes that decrease from an input end of the first string to the output end of the first string. | 10-30-2014 |
20150035577 | PROGRAMMABLE DELAY CIRCUIT - A computing circuit that includes clocked circuitry, a controller, and a clock generator. The clocked circuitry is configured to receive data and to perform data manipulation on the data based on a first clock signal. The controller is configured to control the transmission of the data to the clocked circuitry. The clock generator is configured to receive as inputs a second clock signal and a delay control signal from the controller, and to delay the second clock signal to generate the first clock signal. The clock generator includes a main delay component configured to receive the second clock signal and to output the first clock signal. The clock generator also includes a switchable delay component connected in parallel with the main delay component, where the switchable delay component is configured to receive as an input the delay control signal from the controller. | 02-05-2015 |
20150046721 | RECONFIGURABLE CIRCUIT TO EMULATE SYSTEM CRITICAL PATHS - A circuit for monitoring and controlling a clock signal generated by a clock source in a microprocessor device may include a voltage divider network that provides a plurality of voltages, a selector device that receives the plurality of voltages and provides a scaled supply voltage and a scaled ground voltage from the plurality of voltages, and at least one delay element that receives the scaled supply voltage and the scaled ground voltage and generates a delayed pulse signal by applying a delay to each pulse of the clock signal. The delayed pulse signal may include a delay magnitude that is controllable by the scaled supply voltage and the scaled ground voltage, such that the delayed pulse signal is used to generate a frequency correction signal based on a variation to a supply voltage of the microprocessor. The frequency correction signal may then be applied to the clock source. | 02-12-2015 |
20150109043 | ADJUSTABLE DELAY CALIBRATION IN A CRITICAL PATH MONITOR - A critical path monitor (CPM) having a set of split paths is configured in an integrated circuit (IC) that includes a corresponding set of critical paths. A first and a second split path is configured with a first and a second simulated delay sections and fine delay sections, respectively. A delay of each of the first and second fine delay sections is adjustable in several steps. The delay of the first fine delay section is adjustable differently from the delay of the second fine delay section in response to a common operating condition change. Differently adjusting the delays of the first and the second fine delay sections causes an edge of a pulse to be synchronized between a first edge detector located after the first simulated delay section and a second edge detector located after the second simulated delay section. | 04-23-2015 |