Patent application number | Description | Published |
20100258171 | SOLAR PHOTOVOLTAIC DEVICE - A solar photovoltaic device is provided and includes a solar cell body, a window layer on the solar cell body, and a current collection layer on the window layer. The current collection layer includes a patterned structure, and a portion of the window layer is exposed by the patterned structure. | 10-14-2010 |
20110005595 | SOLAR CELL MODULE AND THE FABRICATION METHOD OF THE SAME - The application illustrates a solar cell module, included a base device, a solar cell on the base device, and a concentrator on the solar cell. The concentrator directly contacts with the solar cell and concentrates the light to the solar cell for opto-electric transformation. | 01-13-2011 |
20120002291 | ELECTROMAGNETIC WAVE GATHERING DEVICE AND SOLAR CELL MODULE HAVING THE SAME - An electromagnetic wave gathering device includes a pillared electromagnetic waveguide body and a reflective structure. The reflective structure is located at about an axis of the pillared electromagnetic waveguide body. The reflective structure comprises a plurality of bicone reflective units. Each of the reflective units has a first reflective surface. The electromagnetic wave gathering device may have a smaller volume and is handy for use. | 01-05-2012 |
20130081681 | PHOTOVOLTAIC DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises a substrate; a first photovoltaic cell disposed over the substrate comprising a base layer having a first conductivity type; an emitter layer having a second conductivity type; a window layer having the second conductivity type; an intermediate structure between the emitter layer and the window layer having the second conductivity type, and comprising a first portion adjacent to the emitter layer and a second portion on the first portion. The first portion comprises a bandgap energy higher than that of the emitter layer and the intermediate structure is substantially lattice matched with the emitter layer. | 04-04-2013 |
20130286634 | METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES - A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately. | 10-31-2013 |
20130298972 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first contact layer and the optoelectronic structure; removing the dielectric layer on the first contact layer; and forming an electrode structure on the first contact layer. | 11-14-2013 |
20140196782 | METHOD FOR MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE THEREBY - Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed. | 07-17-2014 |
20140199784 | Method and Apparatus for Making a Semiconductor Device - Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system. | 07-17-2014 |
20140217359 | Light-Emitting Apparatus - The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer. | 08-07-2014 |