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Wrazien
Stephen J. Wrazien, Cranberry, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20090059675 | Radiation hardened multi-bit sonos non-volatile memory - In one aspect, a radiation hardened transistor includes a buried source, buried drain and a poly-silicon gate separated from the buried source and the buried drain by a buried oxide. A recessed P+ implant or a blanket P+ implant is disposed in a substrate. A portion of the recessed P+ implant or a portion of the blanket P+ implant is disposed beneath outer edges of the poly-silicon gate, in a channel separating the buried source and the buried drain. | 03-05-2009 |
Stephen John Wrazien, Cranberry Township, PA US
| Patent application number | Description | Published |
|---|---|---|
| 20100187583 | Reconfigurable Electric Circuitry and Method of Making Same - A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel. | 07-29-2010 |
Stephen John Wrazien, Cranberry Twp., PA US
| Patent application number | Description | Published |
|---|---|---|
| 20100097714 | GENERATING PES USING READBACK SIGNAL DISTORTION - A data storage system includes a storage medium having a plurality of data sectors and a head that communicates with the data storage medium. The head produces a readback signal when reading information from the data storage medium. A computation unit extracts a distortion component of the readback signal and generates a position error signal from the distortion component. | 04-22-2010 |
| 20100110754 | NON-DESTRUCTIVE READ BACK FOR FERROELECTRIC DATA STORAGE DEVICE - A data storage device comprising a ferroelectric layer, a perovskite structure, and at least one sensor, where the perovskite structure has a polarity discontinuity configured to generate capacitance voltages in the perovskite structure based on polarization charges of the ferroelectric material, and where the at least one sensor is configured to read the capacitance voltages from the perovskite structure. | 05-06-2010 |