Patent application number | Description | Published |
20090101984 | Semiconductor device having gate electrode including metal layer and method of manufacturing the same - A semiconductor device may include a gate dielectric film on a semiconductor substrate and/or a gate electrode. The gate electrode may include a first metal film, a first metal silicide film, and/or a conductive polysilicon film sequentially stacked on the gate dielectric film. | 04-23-2009 |
20090173986 | Semiconductor Devices Including Gate Structures and Leakage Barrier Oxides - Methods of forming a semiconductor device may include forming a tunnel oxide layer on a semiconductor substrate, forming a gate structure on the tunnel oxide layer, forming a leakage barrier oxide, and forming an insulating spacer. More particularly, the tunnel oxide layer may be between the gate structure and the substrate, and the gate structure may include a first gate electrode on the tunnel oxide layer, an inter-gate dielectric on the first gate electrode, and a second gate electrode on the inter-gate dielectric with the inter-gate dielectric between the first and second gate electrodes. The leakage barrier oxide may be formed on sidewalls of the second gate electrode. The insulating spacer may be formed on the leakage barrier oxide with the leakage barrier oxide between the insulating spacer and the sidewalls of the second gate electrode. In addition, the insulating spacer and the leakage barrier oxide may include different materials. Related structures are also discussed. | 07-09-2009 |
20090191699 | METHODS FOR FORMING SILICIDE CONDUCTORS USING SUBSTRATE MASKING - A plurality of spaced-apart conductor structures is formed on a semiconductor substrate, each of the conductor structures including a conductive layer. Insulating spacers are formed on sidewalls of the conductor structures. An interlayer-insulating film that fills gaps between adjacent ones of the insulating spacers is formed. Portions of the interlayer-insulating layer are removed to expose upper surfaces of the conductive layers. Respective epilayers are grown on the respective exposed upper surfaces of the conductive layers and respective metal silicide layers are formed from the respective epilayers. | 07-30-2009 |
20090298273 | METHODS OF FORMING RECESSED GATE ELECTRODES HAVING COVERED LAYER INTERFACES - Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers. | 12-03-2009 |
20100240184 | METHOD OF FORMING BURIED GATE ELECTRODE - A method of forming a buried gate electrode prevents voids from being formed in a silicide layer of the gate electrode. The method begins by forming a trench in a semiconductor substrate, forming a conformal gate oxide layer on the semiconductor in which the trench has been formed, forming a first gate electrode layer on the gate oxide layer, forming a silicon layer on the first gate electrode layer to fill the trench. Then, a portion of the first gate electrode layer is removed to form a recess which exposed a portion of a lateral surface of the silicon layer. A metal layer is then formed on the semiconductor substrate including on the silicon layer. Next, the semiconductor substrate is annealed while the lateral surface of the silicon layer is exposed to form a metal silicide layer on the silicon layer. | 09-23-2010 |
20100240185 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the trench and a wall of the trench, respectively; removing a part of the first oxidation layer and the entire second oxidation layer; and forming the buried type wires on the wall of the trench by performing a silicide process on the wall of the trench from which the second oxidation layer is removed. As a result, the buried type wires are insulated from each other. | 09-23-2010 |
20110003455 | METHODS FOR FABRICATING IMPROVED GATE DIELECTRICS - Disclosed are a variety of methods for increasing the relative thickness in the peripheral or edge regions of gate dielectric patterns to suppress leakage through these regions. The methods provide alternatives to conventional GPDX processes and provide the improved leakage resistance without incurring the degree of increased gate electrode resistance associated with GPDX processes. Each of the methods includes forming a first opening to expose an active area region, forming an oxidation control region on the exposed portion and then forming a second opening whereby a peripheral region free of the oxidation control region is exposed for formation of a gate dielectric layer. The resulting gate dielectric layers are characterized by a thinner central region surrounded or bounded by a thicker peripheral region. | 01-06-2011 |
20110201198 | METHOD FORMING METAL FILM AND SEMICONDUCTOR FABRICATION DEVICE HAVING METAL FILM - A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer. | 08-18-2011 |
20130075909 | SEMICONDUCTOR DEVICE INCLUDING METAL-CONTAINING CONDUCTIVE LINE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing barrier layer in the wiring space, and including at least one metal grain having a particle diameter of about the first width along the first direction. | 03-28-2013 |
20140070300 | VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a substrate, a plurality of insulating layers vertically stacked on the substrate, a plurality of channels arranged in vertical openings formed through at least some of the plurality of insulating layers, and a plurality of portions alternatingly positioned with the plurality of insulating layers in the vertical direction. At least some of the portions are adjacent corresponding channels of the plurality of channels. Each of the portions includes a conductive barrier pattern formed on an inner wall of the portion, a filling layer pattern positioned in the portion on the conductive barrier pattern, and a gate electrode positioned in a remaining area of the portion not occupied by the conductive barrier or filling layer pattern. | 03-13-2014 |
20150017797 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING METAL-CONTAINING CONDUCTIVE LINE - A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing barrier layer in the wiring space, and including at least one metal grain having a particle diameter of about the first width along the first direction. | 01-15-2015 |