Patent application number | Description | Published |
20100307589 | ORGANIC SOLAR CELL AND METHOD OF FABRICATING THE SAME - An organic solar cell includes; a cathode, an anode disposed substantially opposite the cathode, a photoactive layer disposed between the cathode and the anode, wherein the photoactive layer includes an electron donor, an electron acceptor, and a nanostructure, and wherein the nanostructure includes an electron conductive material selected from the group consisting of a semiconductor element, a semiconductor compound, a semiconductor carbon material, a metallic carbon material which is surface-treated with a hole blocking material, a metal which is surface-treated with a hole blocking material and a combination thereof. | 12-09-2010 |
20100320074 | METHOD FOR PREPARING GALLIUM NITRIDE NANOPARTICLES - A method for preparing gallium nitride nanoparticles includes providing a pair of electrodes; the pair of electrodes being opposedly disposed to one another. One electrode of the pair of electrodes is filled with gallium nitride powder. The pair of electrodes is dipped in a liquid. An arc discharge is produced between the pair of electrodes. The arc discharge produces a plasma between the pair of electrodes. | 12-23-2010 |
20100326524 | ORGANIC SOLAR CELL AND METHOD OF FABRICATING THE SAME - An organic solar cell includes; a cathode, an anode disposed substantially opposite the cathode, a photoactive layer disposed between the cathode and the anode, and an electron blocking layer disposed between the anode and the photoactive layer, wherein the photoactive layer includes; an electron donor, an electron acceptor disposed adjacent to the electron donor, and a nanostructure disposed adjacent to at least one of the electron donor and the electron acceptor, wherein the nanostructure is connected to the anode, and includes a hole transporting material selected from the group consisting of a semiconductor element, a semiconductor compound, a semiconductor carbon material, and a combination thereof, and the semiconductor element, the semiconductor compound, or the semiconductor carbon material satisfies the following Equation 1 and 2: | 12-30-2010 |
20110049481 | OPTOELECTRONIC DEVICE - An optoelectronic device including a first electrode, an active layer disposed on the first electrode, a second electrode disposed on the active layer, and a self-assembled monolayer interposed between the first electrode and the active layer, interposed between the active layer and the second electrode, or disposed inside the active layer, wherein the self-assembled monolayer includes a first compound and a second compound having different functional groups from each other. | 03-03-2011 |
20110272028 | ORGANIC SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - An organic solar cell includes a first electrode, a second electrode facing the first electrode, and a photoactive layer disposed between the first and second electrodes. The photoactive layer includes inorganic nanostructures continually connected to one another, and a light-absorbing body filled among the inorganic nanostructures and including a soluble low molecular compound. | 11-10-2011 |
20110272029 | ORGANIC SOLAR CELL AND METHOD OF MAKING THE SAME - An organic solar cell including a cathode and an anode, a photoactive layer disposed between the cathode and the anode, and a buffer layer between the photoactive layer and the cathode, wherein the cathode includes a compound represented by the following Chemical Formula 1 | 11-10-2011 |
20120193689 | PIXEL OF A MULTI-STACKED CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC. | 08-02-2012 |
20120223288 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT). | 09-06-2012 |
20120248414 | Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device - An example embodiment relates to a semiconductor device including a semiconductor element. The semiconductor element may include a plurality of unit layers spaced apart from each other in a vertical direction. Each unit layer may include a patterned graphene layer. The patterned graphene layer may be a layer patterned in a nanoscale. The patterned graphene layer may have a nanomesh or nanoribbon structure. The semiconductor device may be a transistor or a diode. An example embodiment relates to a method of making a semiconductor device including a semiconductor element. | 10-04-2012 |
20120261649 | Image Sensor - An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device. | 10-18-2012 |
20120280340 | MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - A memory device includes a lower electrode formed on a substrate, and an information storage unit formed on the lower electrode. The information storage unit includes a plurality of information storage layers spaced apart from one another. Each of the plurality of information storage layers is an information unit. A method of manufacturing a memory device uses a porous film to form the plurality of information storage layers. | 11-08-2012 |
Patent application number | Description | Published |
20100270602 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device and a method for manufacturing the same are disclosed, which reduce parasitic capacitance generated between a storage node contact and a bit line of a high-integration semiconductor device. A method for manufacturing a semiconductor memory device includes forming a buried word line in an active region of a cell region, forming an insulation layer in the cell region and a lower electrode layer of a gate in a peripheral region so that a height of the insulation layer is substantially equal to that of the lower electrode layer, and providing a first conductive layer over the cell region and the peripheral region to form a bit line layer and an upper electrode layer. | 10-28-2010 |
20110147832 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device, the method comprising: forming a mask pattern over a semiconductor substrate including a device isolation film; etching the semiconductor substrate with the mask pattern as a barrier to form a recess having a semi-circular shape; filling a sacrificial material in the semi-circular shaped recess and between the mask pattern; removing the mask pattern; forming a silicon layer in a portion where the mask pattern is removed; removing the sacrificial material to form a gate region; and providing to gate electrode material in the gate region to form a gate pattern thereby enlarging the radius of curvature of the lower portion of the buried gate to improve a DIBL characteristic and enlarging the area of the part connected to a gate junction to improve contact resistance. | 06-23-2011 |
20120132968 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing a semiconductor device includes forming a device isolation film defining an active region over a semiconductor substrate including a periphery region, forming a gate pattern over the active region, forming a contact plug coupled to each of the gate pattern and the active region, forming a line coupled to the contact plug and a first reservoir capacitor over the same layer as in the line, and forming a second storage capacitor coupled to the first storage capacitor. The semiconductor device sufficiently endures a high bias not only using a line electrode and a dielectric film of a periphery region but also using a MOS-type storage capacitor of an upper electrode, and couples a cylindrical storage capacitor in series to a MOS-type capacitor so that it can be used in a small region. | 05-31-2012 |
20120160750 | MEMBRANE MODULE AND MEMBRANE MODULE ASSEMBLY, AND IMMERSION-TYPE LAYER-SEPA-RATING APPARATUS INCLUDING SAME - Disclosed is a membrane module including: one or more membrane units covering a support and including a membrane having at least one side fused, wherein both sides of each of the membrane units perpendicular to one side of the membrane are molded to be coupled with the first and second frames, respectively. | 06-28-2012 |
20130176250 | MOBILE TERMINAL AND CONTROL METHOD THEREOF - A mobile terminal and a control method of the mobile terminal are disclosed. A mobile terminal and a control method of the mobile terminal of the present invention comprises a first camera; a touchpad; and a controller, if a touch input of a user is obtained through the touchpad, configured to carry out operation based on a gaze direction of the user obtained through the first camera. According to the present invention, operability for the mobile terminal is improved by controlling the mobile terminal based on a touch input through a touchpad and a gaze direction of the user. | 07-11-2013 |
20150115392 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line. | 04-30-2015 |