Woodin
Brittany Rae Woodin, Milledgeville, IL US
Patent application number | Description | Published |
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20150367144 | ADVANCED ROTATING-SHIELD BRACHYTHERAPY AND PLANNING OF THE SAME - Systems and methods for rotating shield brachytherapy. In an aspect, some of the systems and methods can be used to facilitate shield selection for use in rotating shield brachytherapy. In an aspect, the invention is a shielded needle or catheter system with a rotational controller for delivering radioisotope-based interstitial rotating shield brachytherapy (I-RSBT), In an aspect, I-RSBT needles can deliver dose distributions that can be non-radially symmetric about each needle, enabling reduced doses to sensitive normal tissues. Further provided are methods and systems for selecting an emission angle for use in S-RSBT and for sequencing the rotating shields. Further provided are methods and system for the multiple application of M-RSBT in a single setting. | 12-24-2015 |
Mark C. Woodin, New Orleans, LA US
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20090215000 | Method and Apparatus for Processing of Materials - A method and apparatus processing materials including medical waste, municipal waste, along with other wastes, and processing materials; the apparatus comprising an elongate pressure vessel of generally cylindrical configuration having an inlet end, and an end cap for the inlet. | 08-27-2009 |
20120276495 | METHOD AND APPARATUS FOR PROCESSING OF MATERIALS - A method and apparatus processing materials including medical waste, municipal waste, along with other wastes, and processing materials; the apparatus comprising an elongate pressure vessel of generally cylindrical configuration having an inlet end, and an end cap for the inlet. | 11-01-2012 |
Richard L. Woodin, Gorham, ME US
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20110089432 | WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVALANCHE BREAKDOWN VOLTAGE AND A HIGHER FORWARD VOLTAGE DROP THAN THE WIDE BANDGAP DEVICE - An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer. | 04-21-2011 |
Richard L. Woodin, North Yarmouth, ME US
Patent application number | Description | Published |
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20080227275 | METHOD AND DEVICE WITH DURABLE CONTACT ON SILICON CARBIDE - A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact | 09-18-2008 |
20090302327 | RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE - A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer. | 12-10-2009 |
20090315040 | WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVALANCHE BREAKDOWN VOLTAGE AND A HIGHER FORWARD VOLTAGE DROP THAN THE WIDE BANDGAP DEVICE - A method and device for protecting wide bandgap devices from failing during suppression of voltage transients. An improvement in avalanche capability is achieved by placing one or more diodes, or a PNP transistor, across the blocking junction of the wide bandgap device. | 12-24-2009 |
Richard L. Woodin, Gorman, ME US
Patent application number | Description | Published |
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20110318920 | LOW TEMPERATURE, LONG TERM ANNEALING OF NICKEL CONTACTS TO LOWER INTERFACIAL RESISTANCE - A method of annealing semiconductor devices to form substantially ohmic contact regions between a layer of wide band-gap semiconductor material and contact areas disposed thereon includes exposing the semiconductor devices to an annealing temperature less than approximately 900 degrees Celsius for an annealing duration of greater than approximately two hours. | 12-29-2011 |