Patent application number | Description | Published |
20080219194 | METHOD AND APPARATUS FOR SCHEDULING MULTIPLE USERS IN A COMMUNICATION SYSTEM - A method and apparatus for scheduling multiuser terminals in a communication system is provided. A receiver receives feedback information from a plurality of user terminals. A user grouping unit selects terminals having a maximum Signal to Interference plus Noise Ratio (SINR) among terminals having the same beam index and beam subset index, from among the plurality of user terminals, and generates terminal groups using the selected terminals, each terminal group including terminals having the same beam subset index. A group scheduling unit calculates a throughput of each of the terminal groups to determine which terminal group has the maximum throughput. A random precoding unit generates random beam vectors corresponding to terminals included in the terminal group determined to have the maximum throughput, and transmits data for user terminals, included in the terminal group determined to have the maximum throughput, over the generated random beam vectors. | 09-11-2008 |
20090209260 | APPARATUS AND METHOD FOR CALL SETUP IN A WIRELESS COMMUNICATION SYSTEM - An apparatus and method for call setup in a wireless communication system are provided. A first Mobile Station (MS) determines a DownLink (DL) duration, performs synchronization, selects one preamble code among a preamble code set reserved for the call setup of the MS out of the cell area, and transmits the selected preamble code during the determined DL duration. A second MS scans a preamble code during the DL duration, determines if the scanned preamble code is a preamble code for the call setup of the MS out of the cell area, and transmits a response message to the preamble code to the first MS. | 08-20-2009 |
20120113838 | COMMUNICATION METHOD OF A MACRO BASE STATION, A VEHICULAR MOVING RELAY, AND A VEHICULAR MOVING TERMINAL - Provided are examples of methods of a vehicular moving relay in a communication system including the vehicular moving relay, a moving terminal, and a macro base station. Also provided is an example of a terminal. The vehicular moving relay may repeatedly transmit data to a vehicular moving terminal without requesting a handover from a macro base station to the vehicular moving relay, using a unique code that is allocated to the vehicular moving terminal from the macro base station. | 05-10-2012 |
Patent application number | Description | Published |
20090121228 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed. | 05-14-2009 |
20090184326 | DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE DISPLAY SUBSTRATE AND DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE - A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT. | 07-23-2009 |
20100261322 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed. | 10-14-2010 |
20110079776 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved. | 04-07-2011 |
20110284852 | THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode. | 11-24-2011 |
20120104384 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A thin-film transistor (TFT) includes a gate electrode, an oxide semiconductor pattern, a source electrode, a drain electrode and an etch stopper. The gate electrode is formed on a substrate. The oxide semiconductor pattern is disposed in an area overlapping with the gate electrode. The source electrode is partially disposed on the oxide semiconductor pattern. The drain electrode is spaced apart from the source electrode, faces the source electrode, and is partially disposed on the oxide semiconductor pattern. The etch stopper has first and second end portions. The first end portion is disposed between the oxide semiconductor pattern and the source electrode, and the second end portion is disposed between the oxide semiconductor pattern and the drain electrode. A sum of first and second overlapping length is between about 30% and about 99% of a total length of the etch stopper. | 05-03-2012 |