Patent application number | Description | Published |
20130273724 | METHOD FOR CRYSTALLIZING AMORPHOUS SILICON THIN FILM AND METHOD FOR FABRICATING POLY CRYSTALLINE THIN FILM TRANSISTOR USING THE SAME - Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds. | 10-17-2013 |
20140061828 | MAGNETIC MEMORY DEVICES - A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer. | 03-06-2014 |
20140191346 | MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS - A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer. | 07-10-2014 |
20140297968 | MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES - Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures. | 10-02-2014 |
20140339504 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device and method of manufacturing the same are provided. The magnetic memory device can include a first vertical magnetic pattern on a substrate, a second vertical magnetic pattern on the first vertical magnetic pattern, and a tunnel barrier pattern disposed between the first vertical magnetic pattern and the second vertical magnetic pattern. The first vertical magnetic pattern can include a first pattern on the substrate, a second pattern on the first pattern, and an exchange coupling pattern between the first pattern and the second pattern. The first pattern can comprise an amorphous magnetic substance and a component comprising at least one of platinum, palladium, and nickel. | 11-20-2014 |
20150035095 | MAGNETIC MEMORY DEVICES HAVING A PERPENDICULAR MAGNETIC TUNNEL JUNCTION - A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current. | 02-05-2015 |
20150102440 | MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, ELECTRONIC SYSTEMS, AND MEMORY SYSTEMS, AND METHODS OF FABRICATING THE SAME - Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer. | 04-16-2015 |
20150104883 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer on the wafer by reacting the reactive gas with a metal atom separated from the metal target by the inert gas. | 04-16-2015 |
20150155477 | MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES - Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures. | 06-04-2015 |
Patent application number | Description | Published |
20120225457 | NANOPARTICLE-NUCLEIC ACID COMPLEX AND METHOD OF LINEARIZING TARGET NUCLEIC ACID - A nanoparticle-nucleic acid complex and a method of linearizing a target nucleic acid by using the nanoparticle-nucleic acid complex are disclosed. By using the nanoparticle-nucleic acid complex and the method, nucleotide sequence analysis and mapping of a target nucleic acid may be efficiently performed. | 09-06-2012 |
20130009517 | SURFACE ACOUSTIC WAVE SENSOR SYSTEM AND MEASUREMENT METHOD USING MULTIPLE-TRANSIT-ECHO WAVE - A surface acoustic wave (“SAW”) sensor system comprises a signal generating part, which applies an electrical signal to a SAW sensor, the SAW sensor connected to the signal generating part, which converts the electrical signal into a SAW, senses a measurement target using the SAW, and converts a SAW output corresponding to the measurement target into an electrical signal, and a signal measuring part connected to one side of the SAW sensor, which detects a change in the electrical signal by time-gating a multiple-transit-echo wave. | 01-10-2013 |
20130139599 | APPARATUS AND METHOD FOR MEASURING SIGNAL USING SINC FUNCTION - This disclosure describes an apparatus for sensing a target using a sinc function, a surface acoustic wave (SAW) sensor system including the same, and a method of measuring a target using a sinc function. The apparatus for measuring a target using the sinc function may measure an output signal from a SAW sensor with high precision and reliability. | 06-06-2013 |