Patent application number | Description | Published |
20090045321 | Image sensor, method of manufacturing the same, and method of operating the same - An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section. | 02-19-2009 |
20090045479 | Image sensor with vertical drain structures - An image sensor includes an array of photo-detectors, a plurality of conductive line regions, and a conductive junction region. The array of photo-detectors is formed in a semiconductor substrate. Each conductive line region is formed under a respective line of photo-detectors along a first direction in the substrate. The conductive junction region is formed between the array of photo-detectors and the plurality of conductive line regions in the substrate. The conductive line regions and the conductive junction region form vertical drain structures for the photo-detectors. | 02-19-2009 |
20090309144 | CMOS Image sensor having a crosstalk prevention structure - In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P | 12-17-2009 |
20100055823 | Methods of manufacturing CMOS image sensors - Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer. | 03-04-2010 |
20100233869 | METHOD OF FABRICATING EPI-WAFER, EPI-WAFER FABRICATED BY THE METHOD, AND IMAGE SENSOR FABRICATED USING THE EPI-WAFER - A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer. | 09-16-2010 |
20110163362 | Methods of fabricating image sensors and image sensors fabricated thereby - A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region. | 07-07-2011 |
20110163363 | COMS image sensors and methods of manufacturing the same - Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer. | 07-07-2011 |
20120001241 | CMOS Image Sensor Including PNP Triple Layer And Method Of Fabricating The CMOS Image Sensor - A CMOS image sensor (CIS) for sensing visible light and infrared (IR) light, capable of effectively preventing increase in electrical crosstalk that is caused when photodiodes are formed deeply and the thickness of an epitaxial layer is increased due to deep permeation of IR light, and a method of fabricating the CIS. The CIS includes a substrate; the PNP triple layer including a P-type lower layer, an N-type intermediate layer, and a P-type upper layer that are sequentially stacked on the substrate; a plurality of photodiodes formed in the P-type upper layer and isolated from each other by isolation regions; a wiring layer formed on the P-type upper layer and the plurality of photodiodes and including a plurality of wirings; and a plurality of lenses for focusing light to transfer the light to the photodiodes. | 01-05-2012 |
20120164783 | CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME - In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P | 06-28-2012 |