Patent application number | Description | Published |
20090042342 | METHOD FOR CRYSTALLIZATION OF AMORPHOUS SILICON BY JOULE HEATING - The present invention provides a method for preparation of crystallization of amorphous silicon thin film, which comprises providing a forming a amorphous silicon on a dielectric film formed on a transparent substrate; then forming a conductive layer on the top surface of substrate; applying an electric field to the conductive layer so as to generate heat; and crystallization of amorphous silicon thin film by the generated heat. | 02-12-2009 |
20100233858 | METHOD OF PREVENTING GENERATION OF ARC DURING RAPID ANNEALING BY JOULE HEATING - Disclosed herein is a rapid annealing method in a mixed structure composed of a heat treatment-requiring material, dielectric layer and conductive layer, comprising that during rapid annealing on a predetermined part of the heat treatment-requiring material, by instantaneously generated intense heat due to Joule heating by application of an electric field to the conductive layer, the potential difference between the heat treatment-requiring material and the conductive layer is set lower than the dielectric break-down voltage of the dielectric layer, thereby preventing generation of arc by dielectric breakdown of the dielectric layer during the annealing. | 09-16-2010 |
20100244038 | THIN FILM TRANSISTOR AND FABRICATING METHOD OF THE SAME - Provided are thin film transistor, a method of fabricating the same, a flat panel display device including the same, and a method of fabricating the flat panel display device, that are capable of applying an electric field to a gate line to form a channel region of a semiconductor layer of a thin film transistor using a polysilicon layer crystallized by a high temperature heat generated by Joule heating of a conductive layer. As a result, a process can be simplified using a gate line included in the thin film transistor as the conductive layer, and the channel region of the semiconductor layer can be formed of polysilicon having a uniform degree of crystallinity. The thin film transistor includes a straight gate line disposed in one direction, a semiconductor layer crossing the gate line, and source and drain electrodes connected to source and drain regions of the semiconductor layer. | 09-30-2010 |
20100270558 | FABRICATING METHOD OF POLYCRYSTALLINE SILICON THIN FILM, POLYCRYSTALLINE SILICON THIN FILM FABRICATED USING THE SAME - Provided are a method of fabricating a polycrystalline silicon thin film using high temperature heat generated by Joule heating induced by application of an electrical field to a conductive layer, which can ensure process stability at high temperature and thus processing time can be reduced and a polycrystalline silicon thin film having excellent crystallinity can be obtained, a polycrystalline thin film using the method and a thin film transistor including the polycrystalline thin film. The method includes providing a substrate, forming a metal or metal alloy layer having a melting point of 13000 C or more on the substrate, forming an insulating layer on the metal or metal alloy layer, forming an amorphous silicon (a-Si) thin film, an amorphous/polycrystalline composite silicon thin film, or a poly-Si thin film on the insulating layer, and applying an electrical filed to the metal or metal alloy layer to induce Joule heating and generate high temperature heat, and crystallizing and annealing the amorphous silicon (a-Si) thin film, the amorphous/polycrystalline composite silicon thin film, or the poly-Si thin film using the high temperature heat. | 10-28-2010 |
20100313397 | APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM - Provided is an apparatus for manufacturing a polysilicon thin film by depositing an amorphous silicon thin film and an upper silicon dioxide substrate on a lower silicon dioxide substrate, forming a conductive thin film on the upper silicon dioxide substrate, and applying an electric field and performing Joule heating to crystallize the amorphous silicon thin film, the apparatus comprising power terminals for elastically contacting both upper ends of the conductive thin film and supplying power to the conductive thin film, and support members for elastically supporting the substrate such that the power terminals closely contact both upper ends of the conductive thin film to form a uniform electric field at the conductive thin film. Therefore, it is possible to apply an electric field to a conductive thin film and perform Joule heating to crystallize an amorphous silicon thin film, and support members are installed at both lower surfaces of a silicon dioxide substrate to elastically support the silicon dioxide substrate such that power terminals closely contact both upper ends of the conductive thin film, thereby forming a uniform electric field at the conductive thin film to efficiently perform crystallization within a short time. | 12-16-2010 |
20110121308 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - Provided are a thin film transistor including a polycrystalline silicon layer having improved crystallinity by applying Joule heat to form stress gradient in a glass substrate that is disposed under an amorphous silicon layer from a surface to a predetermined depth of the glass substrate, thereby crystallizing the amorphous silicon layer into a polycrystalline silicon layer, and a method of fabricating the same. The film transistor includes a glass substrate having stress gradient from an upper surface to a predetermined depth, a semiconductor layer disposed on the glass substrate, and formed of a polycrystalline silicon layer crystallized by Joule heating, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer, and electrically connected to source and drain regions of the semiconductor layer. | 05-26-2011 |
20120043017 | Joule Heat Encapsulating Apparatus and Encapsulating Method Using the Same - In a Joule heat encapsulating apparatus and an encapsulating method using the same, a panel is mounted on a stage, the panel including a thermal-hardening type sealant for surrounding and sealing a display unit formed between a first substrate and a second substrate, a heat-generating wiring overlapping the thermal-hardening type sealant, and an electric current application wiring connected to the heat-generating wiring. A cap is employed to form a sealed space, in which the panel is arranged, between the stage and the cap. An exhaustion mechanism for exhausting air in the sealed space, and a power applying mechanism connected to the electric current application wiring for supplying a current to the heat-generating wiring, are provided. As a result, a stable encapsulating structure which prevents permeation of oxygen or moisture may be easily formed. | 02-23-2012 |
20120056523 | Flat panel display apparatus and mother substrate for flat panel display apparatus - A flat panel display apparatus includes a first substrate having a display region, a second substrate facing the first substrate and bonded to the first substrate, a groove portion in an edge of at least one of the first substrate and the second substrate, and a wiring portion and a bonding member arranged in the groove portion. The bonding member contacts the wiring portion. The wiring portion is configured to receive power and to supply heat to the bonding member. The bonding member is configured to bond the first substrate and the second substrate using the heat supplied from the wiring portion disposed in the groove portion. | 03-08-2012 |
20120074838 | FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME - Flat panel displays and methods of manufacturing the displays are disclosed. In one embodiment, the flat panel display includes: i) a substrate, ii) a display unit formed over the substrate, iii) an encapsulation substrate formed so as to face the display unit and iv) a sealing member formed between the substrate and the encapsulation substrate so as to substantially surround the display unit. The display may further include i) a wiring unit formed between the substrate and the encapsulation substrate so as to substantially overlap with the sealing member, wherein the wiring unit includes at least one via hole and ii) an inlet unit connected to the wiring unit and connectable to an external power source. | 03-29-2012 |
20120075781 | Flat panel display apparatus and method of manufacturing the same - A flat panel display apparatus with improved sealing characteristics, and a method of manufacturing the same. The flat panel display apparatus includes a substrate; a display unit disposed on the substrate; a sealing substrate disposed to face the display unit; a sealing member disposed between the substrate and the sealing substrate to surround the display unit; a wiring unit disposed between the substrate and the sealing substrate to overlap the sealing member; a first protective layer disposed between the sealing member and the wiring unit; and inlets formed to be electrically connected to an external power source and the wiring unit to apply a voltage to the wiring unit. | 03-29-2012 |
20120105413 | FLAT PANEL DISPLAY APPARATUS AND METHOD OF MANUFACTURING FLAT PANEL DISPLAY APPARATUS - A flat panel display apparatus includes a substrate, a display unit on the substrate, a sealing substrate facing the display unit, a sealing member between the substrate and the sealing substrate surrounding the display unit, a wiring unit between the substrate and the sealing substrate with an area overlapped with the sealing member, the wiring unit comprising a plurality of separate wiring members, and a leading unit comprising a main body unit, a connection unit, and an intermediate unit that are integrally formed and where the leading unit is configured to receive a voltage applied to the wiring unit from an external power source. The connection unit is connected to the wiring unit, the main body unit is connected to the external power source, the intermediate unit is arranged between the connection unit and the main body unit, and a width of the connection unit decreases away from the main body unit. | 05-03-2012 |
20120106044 | Flat Panel Display Apparatus and Method for Manufacturing the Same - In a flat panel display apparatus and a method of manufacturing the same, the flat panel display apparatus includes a substrate, a display unit disposed on the substrate, a sealing substrate disposed facing the display unit, a sealing member disposed between the substrate and the sealing substrate so as to surround the display unit, a wiring unit disposed between the substrate and the sealing substrate so as to partially overlap the sealing member, and at least three inlet portion groups to which voltage is applied via an external power source. The inlet portion groups are connected to the wiring unit. Each inlet portion group includes a plurality of sub-inlet portions. | 05-03-2012 |
20120106098 | Flat Panel Display Apparatus and Method of Manufacturing the Same - In a flat panel display apparatus having improved sealing and a method of manufacturing the same, the flat panel display apparatus comprises: a substrate; a display unit disposed on the substrate; a sealing substrate facing the display unit; a sealing member interposed between the substrate and the sealing substrate and surrounding the display unit; and a plurality of wiring groups comprising areas overlapping the sealing member between the substrate and the sealing substrate; wherein the wiring groups are disposed so as to surround the display unit, are spaced apart from an area corresponding to an edge of the display unit, and receive voltage from an external power source. | 05-03-2012 |
20120164819 | APPARATUS AND METHOD FOR MANUFACTURING POLY-SI THIN FILM - An apparatus and method for fabricating a polycrystalline silicon (poly-Si) thin film are provided. The apparatus includes a chamber, a substrate stage installed at a lower portion in the chamber and on which a substrate including a conductive layer is located, a power application unit installed at an upper portion in the chamber and including an electrode terminal applying power to the conductive layer, and a conductive pad interposed between the electrode terminal and the conductive layer. Thus, it is possible to form a uniform electric field on the conductive layer, and to form a good quality of poly-Si thin film. | 06-28-2012 |
20120224342 | Flat Panel Display Apparatus, Mother Substrate for Flat Panel Display Apparatus, Method of Manufacturing the Flat Panel Display Apparatus, and Method of Manufacturing the Mother Substrate for the Flat Panel Display Apparatus - A flat panel display apparatus having improved encapsulating characteristics comprises: a substrate; a display unit on the substrate; a sealing substrate disposed facing the display unit; a sealing member between the substrate and the sealing substrate and surrounding the display unit; a wiring unit between the substrate and the sealing substrate and overlapping at least the sealing member, and including wiring members separated from each other; and an inlet unit electrically connected to a power source and the wiring unit for applying voltage to the wiring unit, and including an edge parallel with an outermost wiring member of the wiring unit. A mother substrate for the display apparatus comprises a substrate, a plurality of display units, a sealing substrate, a sealing member, wiring units, a connection unit, and an inlet unit. Methods of manufacturing the display apparatus and the mother substrate are also disclosed. | 09-06-2012 |
20130033834 | Flat Panel Display Apparatus, Mother Substrate for Flat Panel Display Apparatus, Method of Manufacturing Flat Panel Display Apparatus, and Method of Manufacturing Mother Substrate for Flat Panel Display Apparatus - A flat panel display apparatus may include: a substrate; a display portion arranged on the substrate; an encapsulation substrate arranged to face the display portion; a sealing portion arranged between the substrate and the encapsulation substrate and surrounding the display portion; a wiring portion arranged between the substrate and the encapsulation substrate and having an area overlapping the sealing portion, and comprising a plurality of wiring members having different respective resistances; and a lead-in portion connected to the wiring portion and an external power source for applying a voltage to the wiring portion. | 02-07-2013 |
20130047920 | DEPOSITION DEVICE FOR FORMING ORGANIC LAYER USING JOULE-HEATING AND DEVICE FOR FABRICATING ELECTROLUMINESCENT DISPLAY DEVICE USING THE DEPOSITION DEVICE - There are provided a deposition device for forming an organic layer using Joule heating and a device for fabricating an electroluminescent display device using the deposition device that includes a cleansing device, an organic matter coating device, an electric field applying device and a loadlock chamber. The cleansing device cleanses a donor substrate. The organic matter coating device coats an organic matter on the donor substrate. The electric field applying device allows the organic matter to be transferred onto an element substrate. Here, the organic matter is heated by the Joule-heating generated by applying an electric field to the donor substrate having the organic matter formed thereon. The loadlock chamber loads or carries out the donor substrate into/from the electric field applying device. Accordingly, the present invention is advantageous in fabricating a large-scale element, and it is possible to increase a processing speed and to reduce device cost. | 02-28-2013 |
20130089954 | METHOD OF FABRICATING ELECTRONIC DEVICE HAVING FLEXIBLE DEVICE - There is provided a method of fabricating an electronic device having a flexible device, which is fabricated using a support substrate by Joule-heating induced film separation (JIFS). A method of fabricating an electronic device having a flexible device includes providing a support substrate, coating a conductive layer on one surface of the support substrate, forming a plastic substrate on the other surface of the support substrate, forming one or more thin-film transistors (TFTs) on the plastic substrate, forming an electronic device electrically connected to any one of the TFTs, and separating the plastic substrate from the conductive layer by generating Joule-heating through application of an electric field to the conductive layer. Accordingly, the flexible device can be separated from the support substrate without deformation of the support substrate and degradation of the electronic device. Since the separation time is short, it is easy to fabricate a large-area device, and the fabrication yield can be improved. | 04-11-2013 |
20130267055 | DEPOSITION SUBSTRATE OF DEPOSITION APPARATUS, METHOD OF FORMING LAYER USING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - Provided are a deposition substrate of a deposition apparatus, a method of forming a layer using the same, and a method of manufacturing an organic light emitting diode (OLED) display device. The method of forming a layer using the deposition substrate includes preparing a substrate, forming a heating conductive layer for Joule heating on the substrate, forming a first insulating layer on the heating conductive layer for Joule heating and including a groove or hole, forming a deposition material layer on a top surface of the first insulating layer having the groove or hole, and applying an electric field to the heating conductive layer for Joule heating to perform Joule-heating on the deposition material layer. Thus, the method is suitable for manufacturing a large-sized device. | 10-10-2013 |
20140050847 | DEPOSITION DEVICE AND DEPOSITION METHOD USING JOULE HEATING - Provided are a deposition method of patterning a thin film on a substrate using momentary Joule heating in a vacuum environment, and a method thereof. The deposition device forms a deposition target layer on one surface of a source substrate as a pattern to be deposited. A deposition target layer forming unit forms a deposition target layer on the one surface of the source substrate to cover the conductive layer. A chamber in a vacuum state receives the source substrate on which the conductive layer and the deposition target layer are formed and the target substrate. A target substrate is disposed in the chamber to face the source substrate. A power supply applies power to the conductive layer to heat-generate the conductive layer. A configuration of the deposition device is very simple, and it is easy to uniformly form a deposition thickness. | 02-20-2014 |
20150060869 | SUPPORTING SUBSTRATE FOR MANUFACTURING FLEXIBLE INFORMAITON DISPLAY DEVICE USING TEMPORARY BONDING/DEBONDING LAYER, MANUFACTURING METHOD THEREOF, AND FLEXIBLE INFORMATION DISPLAY DEVICE - Disclosed are a supporting substrate for manufacturing a flexible information display device using a temporary bonding/debonding layer, a manufacturing method thereof, and a flexible information display device. A supporting substrate for manufacturing a flexible information display device, the supporting substrate comprising: a temporary bonding/debonding layer having a thickness in a range of 0.1 nm to 1000 nm and comprising an adhesive material bonded to the supporting substrate through Van der Waals bonding force. Provided is a method capable of economically manufacturing the display device having a high resolution while reviewing a cost competitive force by reducing a device investment cost and improving the yield rate in the flexible flat panel information display device. | 03-05-2015 |
20150060870 | SUPPORTING SUBSTRATE FOR MANUFACTURING FLEXIBLE INFORMATION DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND FLEXIBLE INFORMATION DISPLAY DEVICE - Disclosed are a supporting substrate for manufacturing a flexible information display device capable of easily separating the flexible information display device from the supporting substrate without deforming or damaging the flexible information display device, a manufacturing method thereof, and a flexible information display device manufactured thereby. The supporting substrate for manufacturing a flexible information display device includes: a coating layer formed therein with a plurality micro-protrusions formed on the supporting substrate; and a temporary bonding/debonding layer formed on the coating layer and including an adhesive material mechanically interlocked with and bonded to the supporting substrate through Van der Waals bonding force. The method provides a method capable of economically manufacturing the display device having a high resolution while reviewing a cost competitive force by reducing a device investment cost and improving the yield rate in the flexible flat panel information display device. | 03-05-2015 |