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Wolters, Eindhoven
Robert Adrianus Maria Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20110101471 | METHOD OF FORMING A NANOCLUSTER-COMPRISING DIELECTRIC LAYER AND DEVICE COMPRISING SUCH A LAYER - A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities. Such a dielectric layer is particularly suitable for use in semiconductor devices such as non-volatile memories. | 05-05-2011 |
Robertus Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20080211032 | Semiconduct Device and Method of Manufacturing Such a Semiconductor Device - The invention relates to a CMOS device ( | 09-04-2008 |
Robertus Adrainus Maria Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20120091416 | Phase Change Material for a Phase Change Memory Device and Method for Adjusting the Resistivity of the Material - A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at % antimony, preferably 5-16 at % germanium, 30-60 at % antimony, 25-51 at % tellurium, and 2-33% at % indium. | 04-19-2012 |
Robertus Adrianus Maria Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20080230802 | Semiconductor Device Comprising a Heterojunction - A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor material. The nanostructure is supported by and in epitaxial relationship with the substrate. A nanostructure may be the functional component of an electronic device such as a gate-around-transistor device. In an embodiment of a gate-around-transistor, a nanowire ( | 09-25-2008 |
| 20080285333 | Electric Device Comprising Phase Change Material - The electric device ( | 11-20-2008 |
| 20080314715 | Security Element and Methods for Manufacturing and Authenticating the Same - A security element comprises at least one oscillating circuit (O | 12-25-2008 |
| 20110187361 | MAGNETIC FIELD SENSOR - An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure. | 08-04-2011 |
| 20110204480 | 3D INTEGRATION OF A MIM CAPACITOR AND A RESISTOR - The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, ( | 08-25-2011 |
| 20110315654 | METHOD OF MANUFACTURING A BULK ACOUSTIC WAVE DEVICE - A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed. | 12-29-2011 |
| 20120211845 | Integrated Circuit with Sensor and Method of Manufacturing Such an Integrated Circuit - Disclosed is an integrated circuit comprising a substrate ( | 08-23-2012 |
Robertus A.m. Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20100029076 | METHOD OF MAKING AN INTERCONNECT STRUCTURE - A damascene process is described using a copper fill process to fill a trench ( | 02-04-2010 |
| 20100090714 | SENSING CIRCUIT FOR DEVICES WITH PROTECTIVE COATING - An integrated circuit has an inhomogeneous protective layer or coating over a circuit to be protected, and a sensing circuit ( | 04-15-2010 |
| 20110297908 | Phase Change Memory Cells and Fabrication Thereof - A phase change memory cell, e.g. a line-cell ( | 12-08-2011 |
Robertus A. M. Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20080277642 | Fabrication of Phase-Change Resistor Using a Backend Process - A phase change resistor device has a phase change material (PCM) for which the phase transition occurs inside the PCM and not at the interface with a contact electrode. For ease of manufacturing the PCM is an elongate line structure ( | 11-13-2008 |
| 20090302419 | METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE - In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench. | 12-10-2009 |
| 20100187527 | TAMPER-RESISTANT SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THEREOF - The invention relates to a tamper-resistant semiconductor device comprising a substrate ( | 07-29-2010 |
| 20100234209 | PARTICLE COMPRISING CORE AND SHELL AND APPLICATIONS THEREOF - The present invention relates to particles comprising a core and a shell, a method of producing said particle, various uses of said particle as well as various products comprising said particle. The particle according to the invention may be used as photocatalyst, as antibacterial agent, as cleaning agent, as anti-fogging agent and as decomposing agent. Furthermore the particle is applicable as solar cells. | 09-16-2010 |
| 20100283456 | MAGNETIC DETECTION OF BACK-SIDE LAYER - The invention relates to an integrated circuit comprising a substrate having a first side and a second opposing side. An electronic circuit (EC) is provided at the first side (S | 11-11-2010 |
Robertus Andrianus Maria Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20100122093 | METHOD, APPARATUS AND SYSTEM FOR VERIFYING AUTHENTICITY OF AN OBJECT - The invention relates to a method for proving authenticity of a prover PRV to a verifier VER, the method comprising generating a secret S using a physical token by the prover PRV. Obtaining a public value PV by the verifier, where the public value PV has been derived from the secret S using a function for which the inverse of said function is computationally expensive. The method further comprising a step for conducting a zero knowledge protocol between the prover PRV and the verifier VER in order to prove to the verifier VER, with a pre-determined probability, that the prover PRV has access to the physical token, where the prover PRV makes use of the secret S and the verifier VER makes use of the public value PV. The invention further relates to a system employing the method, and an object for proving authenticity. | 05-13-2010 |
| 20110254141 | PHYSICAL STRUCTURE FOR USE IN A PHYSICAL UNCLONABLE - The invention relates to a semiconductor device comprising a physical structure ( | 10-20-2011 |
Robertus Antonius Maria Wolters, Eindhoven NL
| Patent application number | Description | Published |
|---|---|---|
| 20120299126 | INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT - Disclosed is an integrated circuit (IC) comprising a substrate ( | 11-29-2012 |