Patent application number | Description | Published |
20090122460 | Semiconductor Device and Method for Producing the Same - A semiconductor device includes a semiconductor layer with a first electrode formed by a sintered, conductive, porous granulate and formed in or on the semiconductor layer or in or on at least one insulating layer arranged on the semiconductor layer; furthermore dielectric material covering the surface of the sintered, conductive, porous granulate, and a second electrode at least partially covering the dielectric material, wherein the dielectric material electrically insulates the second electrode from the first electrode. | 05-14-2009 |
20090325361 | METHOD FOR PRODUCING A SEMICONDUCTOR INCLUDING A MATERIAL LAYER - A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench. | 12-31-2009 |
20100273307 | METHOD OF MAKING A DEVICE INCLUDING A CAPACITIVE STRUCTURE - A method for making a device including a capacitive structure is disclosed. One embodiment provides a carrier layer having a surface. A first dielectric layer is formed on the surface. A silicon layer including silicon grains is formed on the first dielectric layer using a deposition process. A second dielectric layer is formed on the second silicon layer. A layer of an electrically conductive material is formed on the dielectric layer. A temperature process for heating at least the first dielectric layer is performed. The temperature and duration of the temperature process is selected such that the first dielectric layer is modified so that the silicon layer is electrically connected to the carrier layer. | 10-28-2010 |
20120080690 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate. | 04-05-2012 |
20120083098 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate. | 04-05-2012 |
20120181656 | Semiconductor Device and Method of Manufacturing Thereof - A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode. | 07-19-2012 |
20120202327 | Compressive Polycrystalline Silicon Film and Method of Manufacture Thereof - In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C. | 08-09-2012 |
20120286355 | Power Semiconductor Device and a Method for Forming a Semiconductor Device - A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided. | 11-15-2012 |
20120289023 | Method for Producing a Semiconductor Device - A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench. | 11-15-2012 |
20130043562 | Compressive Polycrystalline Silicon Film and Method of Manufacture Thereof - In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C. | 02-21-2013 |
20140070232 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided. | 03-13-2014 |
20140110838 | SEMICONDUCTOR DEVICES AND PROCESSING METHODS - Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness. | 04-24-2014 |
20140145305 | Capacitor and Method of Forming a Capacitor - A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode. | 05-29-2014 |
20140235058 | Method for Forming a Power Semiconductor Device - A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor. | 08-21-2014 |
20140306184 | TWO-DIMENSIONAL MATERIAL CONTAINING ELECTRONIC COMPONENTS - In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure. | 10-16-2014 |
20140335676 | METHOD FOR MANUFACTURING A COMPOSITE WAFER HAVING A GRAPHITE CORE, AND COMPOSITE WAFER HAVING A GRAPHITE CORE - According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate. | 11-13-2014 |