| Patent application number | Description | Published |
|---|
| 20090026181 | RADIO FREQUENCY POWER SUPPLY - A plasma supply device includes a full bridge circuit that is connected to a DC power supply and that has two half bridges each with two series connected switching elements. The plasma supply device further includes a primary winding of a power transformer connected to centers of the half bridges between the switching elements. The primary winding includes a tapping connectable to an alternating current center between the potentials of the DC power supply. | 01-29-2009 |
| 20090026968 | PLASMA SUPPLY DEVICE - A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network. The output network is arranged on a printed circuit board. The output network can therefore be designed low priced and accurately. | 01-29-2009 |
| 20090027937 | High frequency power supply - A high frequency power supply, in particular a plasma supply device, for generating an output power greater than 1 kW at a basic frequency of at least 3 MHz with at least one switch bridge, which has two series connected switching elements, wherein one of the switching elements is connected to a reference potential varying in operation, and is activated by a driver, and wherein the driver has a differential input with two signal inputs and is connected to the reference potential varying in operation. | 01-29-2009 |
| 20100171428 | DRIVING SWITCHES OF A PLASMA LOAD POWER SUUPLY - Operation of a plasma supply device having at least one switching bridge with at least two switching elements, and configured to deliver a high frequency output signal having a power of >500 W and a substantially constant fundamental frequency>3 MHz to a plasma load is accomplished by determining at least one operating parameter, at least one environmental parameter of at least one switching element and/or a switching bridge parameter, determining individual drive signals for the switching elements taking into account the at least one operating parameter, the at least one environmental parameter and/or the switching bridge parameter, and individually driving the switching elements with a respective drive signal. | 07-08-2010 |
| Patent application number | Description | Published |
|---|
| 20090173961 | Led Semiconductor Body and Use of an Led Semiconductor body - An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction. | 07-09-2009 |
| 20090309120 | LED Semiconductor Element, and Use Thereof - An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone. | 12-17-2009 |
| 20100019259 | LED Semiconductor Body and Use of an LED Semiconductor Body - An LED semiconductor body includes at least one first radiation-generating active layer and at least one second radiation-generating active layer, wherein the LED semiconductor body has a photonic crystal. | 01-28-2010 |
| 20100038667 | Optoelectronic Semiconductor Chip and Method for Manufacturing a Contact Structure for Such a Chip - An optoelectronic semiconductor chip with a semiconductor body having a semiconductor layer sequence with an active region suitable for generating radiation is specified, wherein the semiconductor chip comprises a radiation-transmissive and electrically conductive contact layer arranged on a semiconductor body and electrically connected to an active region. The contact layer adjoins a barrier layer of the semiconductor layer sequence and a contact layer is applied to the semiconductor body having a structure. An electrode is arranged on the semiconductor body on a side of the active region facing away from the barrier layer and having a contact area, wherein the contact layer adjoins the barrier layer with its entire surface in a region of the barrier layer that is covered by the contact area of the electrode. | 02-18-2010 |
| 20100258892 | Radiation Receiver and Method of Producing a Radiation Receiver - A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated. | 10-14-2010 |
| 20110215295 | METHOD OF PRODUCING A RADIATION-EMITTING THIN FILM COMPONENT AND RADIATION-EMITTING THIN FILM COMPONENT - A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods. | 09-08-2011 |
| 20110227124 | LED Semiconductor Element Having Increased Luminance - An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone. | 09-22-2011 |
| 20110240955 | LED Semiconductor Body and Use of an LED Semiconductor Body - An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body. | 10-06-2011 |
| 20110248295 | Lamp - In at least one embodiment of the luminous means ( | 10-13-2011 |
