Patent application number | Description | Published |
20080198699 | METHOD FOR BUILT IN SELF TEST FOR MEASURING TOTAL TIMING UNCERTAINTY IN A DIGITAL DATA PATH - A circuit for measuring timing uncertainty in a clocked digital path and in particular, the number of logic stages completed in any clock cycle. A local clock buffer receives a global clock and provides a complementary pair of local clocks. A first local (launch) clock is an input to a delay line, e.g., 3 clock cycles worth of series connected inverters. Delay line taps (inverter outputs) are inputs to a register that is clocked by the complementary clock pair to capture progression of the launch clock through the delay line and identify any variation (e.g., from jitter, VDD noise) in that progression. Global clock skew and across chip gate length variation can be measured by cross coupling launch clocks from a pair of such clock buffers and selectively passing the local and remote launch clocks to the respective delay lines. | 08-21-2008 |
20080198700 | DUTY CYCLE MEASURMENT CIRCUIT FOR MEASURING AND MAINTAINING BALANCED CLOCK DUTY CYCLE - A circuit for measuring timing uncertainty in a clocked digital path and in particular, the number of logic stages completed in any clock cycle. A local clock buffer receives a global clock and provides a complementary pair of local clocks. A first local (launch) clock is an input to a delay line, e.g., 3 clock cycles worth of series connected inverters. Delay line taps (inverter outputs) are inputs to a register that is clocked by the complementary clock pair to capture progression of the launch clock through the delay line and identify any variation (e.g., from jitter, VDD noise) in that progression. Global clock skew and across chip gate length variation can be measured by cross coupling launch clocks from a pair of such clock buffers and selectively passing the local and remote launch clocks to the respective delay lines. | 08-21-2008 |
20080263417 | Efficient Memory Product for Test and Soft Repair of SRAM with Redundancy - Memory array built in self testing utilizing including a simple data history table. The table is used to track failing locations observed during any level of assembly test of processor or logic semiconductor chips where the chips contain SRAM macros with redundant elements for failure relief. | 10-23-2008 |
20090034345 | Eight Transistor SRAM Cell with Improved Stability Requiring Only One Word Line - An SRAM cell that is accessed by a single word line and separate access transistors for read and write operations. A pair of write bit line transfer devices provide respectively access to the right and left sides of cross coupled pull-up, pull-down transistor pairs for a write operation, and a single read bit line transistor in series with the word line transistor, when selected, reads the content of the cell. | 02-05-2009 |
20090204762 | Self Test Apparatus for Identifying Partially Defective Memory - A computing system is provided which includes a processor having a cache memory. The cache memory includes a plurality of independently configurable subdivisions, each subdivision including a memory array. A service element (SE) of the computing system is operable to cause a built-in-self-test (BIST) to be executed to test the cache memory, the BIST being operable to determine whether any of the subdivisions is defective. When it is determined that one of the subdivisions of the cache memory determined defective by the BIST is non-repairable, the SE logically deletes the defective subdivision from the system configuration, and the SE is operable to permit the processor to operate without the logically deleted subdivision. The SE is further operable to determine that the processor is defective when a number of the defective subdivisions exceeds a threshold. | 08-13-2009 |
20110307747 | MEMORY TESTING SYSTEM - An array built-in self test (ABIST) system includes a first latch having a first data input, a first scan input and first output and a second latch having a second data input, a second scan input and a second output. The system also includes a first ABIST logic block coupled to the first output that compares a first expected value with a first data value received at the first data input and provided to the first ABIST logic block after a first clock is applied to the first latch. The system also includes a second ABIST logic block coupled to the second output that compares a second expected value with a second data value received at the second data input and provided to the second ABIST logic block after a second clock is applied to the second latch. | 12-15-2011 |
20140140157 | Complementary Metal-Oxide-Semiconductor (CMOS) Min/Max Voltage Circuit for Switching Between Multiple Voltages - A voltage selection mechanism is provided for switching between multiple voltages without causing a direct current (DC) that may further stress storage elements due to excessive power consumption and electro-migration effects. The voltage selection mechanism comprises cross-coupled circuitry, which comprises a first positive-channel field effect transistor (PFET) and a second PFET. The voltage selection mechanism further comprises diode circuitry, which comprises a third PFET and a fourth PFET. | 05-22-2014 |
20140197863 | PLACEMENT OF STORAGE CELLS ON AN INTEGRATED CIRCUIT - A method for configuring the placement of a plurality of storage cells on an integrated circuit includes grouping the plurality of storage cells into a plurality of words, where each of the plurality of words is protected by an error control mechanism. The method also includes placing each of the storage cells on the integrated circuit such that a distance between any two of the storage cells belonging to one of the plurality of words is greater than a minimum distance. The minimum distance is configured such that a probability of any of the plurality of words experiencing multiple radiation induced errors is below a threshold value. | 07-17-2014 |
20140201589 | SHARED ERROR PROTECTION FOR REGISTER BANKS - A method for adding error detection, or error detection combined with error correction, to a plurality of register banks includes grouping the plurality of register banks into an array. The method also includes adding a first error control mechanism to the array in a first direction and adding a second error control mechanism to the array in a second direction. The method further includes adding a product code to the array, the product code including applying the second error control mechanism to a plurality of bits of the first error control mechanism. | 07-17-2014 |
20140201606 | ERROR PROTECTION FOR A DATA BUS - A system for providing error detection or correction on a data bus includes one or more caches coupled to a central processing unit and to a hub by one or more buses. The system also includes a plurality of arrays, each array disposed on one of the buses. Each of the arrays includes a plurality of storage cells disposed in an insensitive direction and an error control mechanism configured to detect an error in the plurality of storage cells. | 07-17-2014 |
20140208184 | ERROR PROTECTION FOR INTEGRATED CIRCUITS - A method for providing error detection and/or correction to an array of storage cells includes determining a sensitive direction and an insensitive direction of the storage cells and adding a first error control mechanism to the array of storage cells in the insensitive direction. The method also includes adding a second error control mechanism to the array of storage cells in the sensitive direction. The second error control mechanism has a higher Hamming distance than the first error control mechanism. | 07-24-2014 |