Patent application number | Description | Published |
20090013233 | ERROR RECOVERY STORAGE ALONG A NAND-FLASH STRING - Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes. | 01-08-2009 |
20090013234 | DATA STORAGE WITH AN OUTER BLOCK CODE AND A STREAM-BASED INNER CODE - Apparatus and methods store stream-based error recovery data for a memory array, such as a NAND flash array. Conventionally, data is block coded per industry specification and stored in the memory array. Within the limits of the block code, this technique provides for correction of errors. By applying a stream-based inner code, that is, concatenating the outer block code with an outer code, the error correction can be further enhanced, enhancing the reliability of the device. This can also permit a relatively small-geometry device to be used in a legacy application. | 01-08-2009 |
20090109747 | FRACTIONAL BITS IN MEMORY CELLS - The present disclosure includes methods, devices, modules, and systems for programming memory cells. One method embodiment includes storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. The method also includes storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2 | 04-30-2009 |
20090132755 | FAULT-TOLERANT NON-VOLATILE INTEGRATED CIRCUIT MEMORY - Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code consumes relatively little extra memory space. In one embodiment, the convolutional code is spread over portions of a plurality of memory devices, rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices. | 05-21-2009 |
20090132889 | MEMORY CONTROLLER SUPPORTING RATE-COMPATIBLE PUNCTURED CODES - Apparatus and methods store data in a non-volatile solid state memory device according to a rate-compatible code, such as a rate-compatible convolutional code (RPCC). An example of such a memory device is a flash memory device. Data can initially be block encoded for error correction and detection. The block-coded data can be further convolutionally encoded. Convolutional-coded data can be punctured and stored in the memory device. The puncturing decreases the amount of memory used to store the data. Depending on conditions, the amount of puncturing can vary from no puncturing to a relatively high amount of puncturing to vary the amount of additional error correction provided and memory used. The punctured data can be decoded when data is to be read from the memory device. | 05-21-2009 |
20090198880 | READ STROBE FEEDBACK IN A MEMORY SYSTEM - A controller circuit is coupled to a memory device over a data/IO bus and a control bus. The controller circuit generates a read enable signal that is transmitted to the memory device to instruct the memory device to drive data onto the data/IO bus. The read enable signal is fed back to the controller circuit that then uses the fed back signal to read the data from the data/IO bus. | 08-06-2009 |
20090248952 | DATA CONDITIONING TO IMPROVE FLASH MEMORY RELIABILITY - Methods and apparatus for managing data storage in memory devices utilizing memory arrays of varying density memory cells. Data can be initially stored in lower density memory. Data can be further read, compacted, conditioned and written to higher density memory as background operations. Methods of data conditioning to improve data reliability during storage to higher density memory and methods for managing data across multiple memory arrays are also disclosed. | 10-01-2009 |
20090300269 | HYBRID MEMORY MANAGEMENT - Methods and apparatus for managing data storage in hybrid memory devices utilizing single level and multi level memory cells. Logical addresses can be distributed between single level and multilevel memory cells based on a frequency of write operations performed. Initial storage of data corresponding to a logical address in memory can be determined by various methods including initially writing all data to single level memory or initially writing all data to multilevel memory. Other methods permit a host to direct logical address writes to single level or multilevel memory cells based on anticipated usage. | 12-03-2009 |
20100110798 | PROGRAM WINDOW ADJUST FOR MEMORY CELL SIGNAL LINE DELAY - A memory device and programming and/or reading process is described that compensates for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Memory cell signal line propagation delay compensation can be accomplished by characterizing the memory cell signal line propagation delay, such as determining an amount of error due to the delay, and pre-compensating the programmed threshold voltage of the memory cells based on the amount of error induced by the memory cell signal line propagation delay and cell location on the selected memory cell signal line. Alternatively, memory cell signal line propagation delay can be post-compensated for, or the pre-compensation fine tuned, after sensing the threshold voltages of the selected memory cells based on the amount of error induced by the memory cell signal line propagation delay and cell location on the selected memory cell signal line. Other methods, devices, etc., are also disclosed. | 05-06-2010 |
20100124132 | REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL ADDRESSES - Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective memory column replaces the defective memory column. The non-defective column of memory cells is proximate non-defective column of memory cells following the defective column of memory cells in the sequence of columns of memory cells that is available to replace the defective column of memory cells. | 05-20-2010 |
20100124133 | REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES - Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective memory block of a sequence of memory blocks of the memory device in place of a defective memory block of the sequence of memory blocks such that the non-defective memory block replaces the defective memory block. The non-defective memory block is proximate non-defective memory block following the defective memory block in the sequence of memory blocks that is available to replace the defective memory block. | 05-20-2010 |
20100191874 | HOST CONTROLLER - The present disclosure includes methods, devices, and systems for controlling a memory device. One method for controlling a memory device embodiment includes storing device class dependent information and a command in one or more of host system memory and host controller memory, setting a pointer to the command in a register in a host controller, directing access to the one or more of host system memory and host controller memory with the memory device via the host controller; and executing the command with the memory device. | 07-29-2010 |
20100251066 | DATA HANDLING - Methods and apparatus to facilitate determining or selecting a depth of error detection and/or error correction coverage, and detecting and/or correcting errors in data in accordance with the determined or selected depth of error detection and/or error correction coverage. | 09-30-2010 |
20100312973 | METHODS FOR CONTROLLING HOST MEMORY ACCESS WITH MEMORY DEVICES AND SYSTEMS - The present disclosure includes methods for controlling host memory access with a memory device, systems, host controllers and memory devices. One embodiment for controlling host memory access with a memory device includes receiving at least one command from a host and controlling execution of the at least one command with the memory device. | 12-09-2010 |
20100313065 | OBJECT ORIENTED MEMORY IN SOLID STATE DEVICES - The present disclosure includes methods, devices, and systems for object oriented memory in solid state devices. One embodiment of a method for object oriented memory in solid state devices includes accessing a defined set of data as a single object in an atomic operation manner, where the accessing is from a source other than a host. The embodiment also includes storing the defined set of data as the single object in a number of solid state memory blocks as formatted by a control component of a solid state device that includes the number of solid state memory blocks. | 12-09-2010 |
20110032823 | PACKET DECONSTRUCTION/RECONSTRUCTION AND LINK-CONTROL - The present disclosure includes methods, devices, and systems for packet processing. One method embodiment for packet flow control includes deconstructing a transport layer packet into a number of link-control layer packets, wherein each of the link-control layer packets has an associated sequence number, communicating the number of link-control layer packets via a common physical connection for a plurality of peripheral devices, and limiting a number of outstanding link-control layer packets during the communication. | 02-10-2011 |
20110047366 | BOOTING IN SYSTEMS HAVING DEVICES COUPLED IN A CHAINED CONFIGURATION - The present disclosure includes methods, devices, and systems for booting in systems having devices coupled in a chained configuration. One or more embodiments include a host and a number of devices coupled to the host in a chained configuration, wherein at least one of the number of devices is a bootable device and the at least one bootable device is not directly coupled to the host. | 02-24-2011 |
20110051513 | METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES - The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell. | 03-03-2011 |
20110055436 | DEVICE TO DEVICE FLOW CONTROL - The present disclosure includes methods, devices, and systems for device to device flow control. In one or more embodiments, a system configured for device to device flow control includes a host and a chain of devices, including one or more memory device, coupled to each other and configured to communicate with the host device through a same host port. In one or more embodiments, at least one device in the chain is configured to regulate the flow of data by sending a token in downstream data packets, the token allowing devices downstream from the respective at least one device to send an upstream data packet to the respective at least one device. | 03-03-2011 |
20110063907 | FRACTIONAL BITS IN MEMORY CELLS - Methods, devices, modules, and systems for programming memory cells can include storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. Programming memory cells can include storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2 | 03-17-2011 |
20110078336 | STATE CHANGE IN SYSTEMS HAVING DEVICES COUPLED IN A CHAINED CONFIGURATION - The present disclosure includes methods, devices, and systems for state change in systems having devices coupled in a chained configuration. A number of embodiments include a host and a number of devices coupled to the host in a chained configuration. The chained configuration includes at least one device that is not directly coupled to the host. The at least one device that is not directly coupled to the host is configured to change from a first communication state to a second communication state responsive to receipt of a command from the host. | 03-31-2011 |
20110122713 | READ STROBE FEEDBACK IN A MEMORY SYSTEM - A controller circuit is coupled to a memory device over a data/IO bus and a control bus. The controller circuit generates a read enable signal that is transmitted to the memory device to instruct the memory device to drive data onto the data/IO bus. The read enable signal is fed back to the controller circuit that then uses the fed back signal to read the data from the data/IO bus. | 05-26-2011 |
20110122717 | REPLACING DEFECTIVE COLUMNS OF MEMORY CELLS IN RESPONSE TO EXTERNAL ADDRESSES - Controllers and memory devices are provided. In an embodiment, a controller is configured to address a non-defective column of memory cells of a memory device in place of a defective column of memory cells of the memory device in response to receiving an address of the defective column of memory cells from the memory device. In another embodiment, a memory device has columns of memory cells and is configured to receive an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective column replaces the defective column. The non-defective column is a proximate non-defective column following the defective column in the sequence of columns that is available to replace the defective column. | 05-26-2011 |
20110239093 | FAULT-TOLERANT NON-VOLATILE INTEGRATED CIRCUIT MEMORY - Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code consumes relatively little extra memory space. In one embodiment, the convolutional code is spread over portions of a plurality of memory devices, rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices. | 09-29-2011 |
20110258425 | BOOT PARTITIONS IN MEMORY DEVICES AND SYSTEMS - The present disclosure includes boot partitions in memory devices and systems, and methods associated therewith. One or more embodiments include an array of memory cells, wherein the array includes a boot partition and a number of additional partitions. Sequential logical unit identifiers are associated with the additional partitions, and a logical unit identifier that is not in sequence with the sequential logical unit identifiers is associated with the boot partition. | 10-20-2011 |
20110280084 | DETERMINING AND USING SOFT DATA IN MEMORY DEVICES AND SYSTEMS - The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data. | 11-17-2011 |
20120008399 | METHODS OF OPERATING MEMORIES INCLUDING CHARACTERIZING MEMORY CELL SIGNAL LINES - Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Methods include selecting a memory cell signal line of a memory and characterizing the memory cell signal line by determining an RC time constant of the memory cell signal line. | 01-12-2012 |
20120030545 | ERROR RECOVERY STORAGE ALONG A NAND-FLASH STRING - Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes. | 02-02-2012 |
20120042225 | DATA STORAGE WITH AN OUTER BLOCK CODE AND A STREAM-BASED INNER CODE - Apparatus and methods store stream-based error recovery data for a memory array, such as a NAND flash array. Conventionally, data is block coded per industry specification and stored in the memory array. Within the limits of the block code, this technique provides for correction of errors. By applying a stream-based inner code, that is, concatenating the outer block code with an outer code, the error correction can be further enhanced, enhancing the reliability of the device. This can also permit a relatively small-geometry device to be used in a legacy application. | 02-16-2012 |
20120059992 | HYBRID MEMORY MANAGEMENT - Methods and apparatus for managing data storage in hybrid memory devices utilizing single level and multi level memory cells. Logical addresses can be distributed between single level and multilevel memory cells based on a frequency of write operations performed. Initial storage of data corresponding to a logical address in memory can be determined by various methods including initially writing all data to single level memory or initially writing all data to multilevel memory. Other methods permit a host to direct logical address writes to single level or multilevel memory cells based on anticipated usage. | 03-08-2012 |
20120069658 | METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES - The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell. | 03-22-2012 |
20120147672 | FRACTIONAL BITS IN MEMORY CELLS - Methods, devices, modules, and systems for programming memory cells can include storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. Programming memory cells can include storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2 | 06-14-2012 |
20120182810 | METHODS, DEVICES, AND SYSTEMS FOR ADJUSTING SENSING VOLTAGES IN DEVICES - The present disclosure includes methods, devices, and systems for adjusting sensing voltages in devices. One or more embodiments include memory cells, and a controller configured to perform a sense operation on the memory cells using a sensing voltage to determine a quantity of the memory cells having a threshold voltage (Vt) greater than the sensing voltage and adjust a sensing voltage used to determine a state of the memory cells based, at least partially, on the determined quantity of memory cells. | 07-19-2012 |
20120210025 | DEVICE TO DEVICE FLOW CONTROL - The present disclosure includes methods, devices, and systems for device to device flow control. In one or more embodiments, a system configured for device to device flow control includes a host and a chain of devices, including one or more memory device, coupled to each other and configured to communicate with the host device through a same host port. In one or more embodiments, at least one device in the chain is configured to regulate the flow of data by sending a token in downstream data packets, the token allowing devices downstream from the respective at least one device to send an upstream data packet to the respective at least one device. | 08-16-2012 |
20120243362 | ADVANCED DETECTION OF MEMORY DEVICE REMOVAL, AND METHODS, DEVICES AND CONNECTORS - Memory devices, connectors and methods for terminating an operation are provided, including a memory device configured to terminate an internal operation such as a programming or erase operation responsive to receiving a signal during removal of the memory device from a connector, such as a socket. The memory device may be configured to generate the removal signal, such as by including a dedicated removal terminal. The memory card may respond to the signal by terminating a programming or erase operation before power is lost. The removal terminal may have a dimension that is different from a dimension of a power terminal. Alternatively, the connector may be configured to generate a signal that causes a host to terminate programming or erase operations prior to memory card removal, such as by including a switch that is actuated when the memory device moves to a pre-power loss position. | 09-27-2012 |
20120281537 | PACKET DECONSTRUCTION/RECONSTRUCTION AND LINK-CONTROL - The present disclosure includes methods, devices, and systems for packet processing. One method embodiment for packet flow control includes deconstructing a transport layer packet into a number of link-control layer packets, wherein each of the link-control layer packets has an associated sequence number, communicating the number of link-control layer packets via a common physical connection for a plurality of peripheral devices, and limiting a number of outstanding link-control layer packets during the communication. | 11-08-2012 |
20120284466 | METHODS FOR CONTROLLING HOST MEMORY ACCESS WITH MEMORY DEVICES AND SYSTEMS - The present disclosure includes methods for controlling host memory access with a memory device, systems, host controllers and memory devices. One embodiment for controlling host memory access with a memory device includes receiving at least one command from a host and controlling execution of the at least one command with the memory device. | 11-08-2012 |
20120290826 | BOOTING IN SYSTEMS HAVING DEVICES COUPLED IN A CHAINED CONFIGURATION - The present disclosure includes methods, devices, and systems for booting in systems having devices coupled in a chained configuration. One or more embodiments include a host and a number of devices coupled to the host in a chained configuration, wherein at least one of the number of devices is a bootable device and the at least one bootable device is not directly coupled to the host. | 11-15-2012 |
20120290902 | FAULT-TOLERANT NON-VOLATILE INTEGRATED CIRCUIT MEMORY - Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code consumes relatively little extra memory space. In one embodiment, the convolutional code is spread over portions of a plurality of memory devices, rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices. | 11-15-2012 |
20120304038 | ERROR RECOVERY STORAGE ALONG A MEMORY STRING - Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes. | 11-29-2012 |
20120307559 | DATA MODULATION FOR GROUPS OF MEMORY CELLS - Methods, devices, and systems for data modulation for groups of memory cells. Data modulation for groups of memory cells can include modulating N units of data to a combination of programmed states. Each memory cell of a group of G number of memory cells can be programmed to one of M number of programmed states, where M is greater than a minimum number of programmed states needed to store N/G units of data in one memory cell, and where the programmed state of each memory cell of the group is one of the combination of programmed states. | 12-06-2012 |
20130007355 | DATA CONDITIONING TO IMPROVE FLASH MEMORY RELIABILITY - Methods and apparatus for managing data storage in memory devices utilizing memory arrays of varying density memory cells. Data can be initially stored in lower density memory. Data can be further read, compacted, conditioned and written to higher density memory as background operations. Methods of data conditioning to improve data reliability during storage to higher density memory and methods for managing data across multiple memory arrays are also disclosed. | 01-03-2013 |
20130010542 | PROGRAMMING METHODS AND MEMORIES - Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell. | 01-10-2013 |
20130013816 | STATE CHANGE IN SYSTEMS HAVING DEVICES COUPLED IN A CHAINED CONFIGURATION - The present disclosure includes methods, devices, and systems for state change in systems having devices coupled in a chained configuration. A number of embodiments include a host and a number of devices coupled to the host in a chained configuration. The chained configuration includes at least one device that is not directly coupled to the host. The at least one device that is not directly coupled to the host is configured to change from a first communication state to a second communication state responsive to receipt of a command from the host. | 01-10-2013 |
20130013822 | HOST CONTROLLER - The present disclosure includes methods, devices, and systems for controlling a memory device. One method for controlling a memory device embodiment includes storing device class dependent information and a command in one or more of host system memory and host controller memory, setting a pointer to the command in a register in a host controller, directing access to the one or more of host system memory and host controller memory with the memory device via the host controller; and executing the command with the memory device. | 01-10-2013 |
20130028022 | DYNAMIC PROGRAM WINDOW DETERMINATION IN A MEMORY DEVICE - Methods for determining a program window and memory devices are disclosed. One such method for determining the program window measures an amount of program disturb experienced by a particular state and determines the program window responsive to the amount of program disturb. | 01-31-2013 |
20130039129 | MEMORY DEVICES AND CONFIGURATION METHODS FOR A MEMORY DEVICE - Memory devices and methods of operating memory devices are disclosed. In one such method, different blocks of memory cells have different configurations of user data space and overhead data space. In at least one method, overhead data is distributed within more than one block of memory cells. In another method, blocks are reconfigurable responsive to particular operating modes and/or desired levels of reliability of user data stored in a memory device. | 02-14-2013 |
20130051143 | MEMORY CELL COUPLING COMPENSATION - Methods for memory cell coupling compensation and apparatuses configured to perform the same are described. One or more methods for memory cell coupling compensation includes determining a state of a memory cell using a voltage that is changed in accordance with a first memory cell coupling compensation voltage, performing an error check on the state of the memory cell, and determining the state of the memory cell using a voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing. | 02-28-2013 |
20130058168 | METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES - The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell. | 03-07-2013 |
20130080864 | MEMORY CONTROLLER SUPPORTING RATE-COMPATIBLE PUNCTURED CODES - Apparatus and methods store data in a non-volatile solid state memory device according to a rate-compatible code, such as a rate-compatible convolutional code (RPCC). An example of such a memory device is a flash memory device. Data can initially be block encoded for error correction and detection. The block-coded data can be further convolutionally encoded. Convolutional-coded data can be punctured and stored in the memory device. The puncturing decreases the amount of memory used to store the data. Depending on conditions, the amount of puncturing can vary from no puncturing to a relatively high amount of puncturing to vary the amount of additional error correction provided and memory used. The punctured data can be decoded when data is to be read from the memory device. | 03-28-2013 |
20130141985 | METHODS, DEVICES, AND SYSTEMS FOR ADJUSTING SENSING VOLTAGES IN DEVICES - The present disclosure includes methods, devices, and systems for adjusting sensing voltages in devices. One or more embodiments include memory cells, and a controller configured to perform a sense operation on the memory cells using a sensing voltage to determine a quantity of the memory cells having a threshold voltage (Vt) greater than the sensing voltage and adjust a sensing voltage used to determine a state of the memory cells based, at least partially, on the determined quantity of memory cells. | 06-06-2013 |
20130159813 | MEMORY CONTROLLER ECC - Memory controllers having a data buffer coupled to receive and hold data from a memory device, and an Error Correction Code (ECC) generator/checker coupled to the data buffer. The ECC generator/checker is configured to generate ECC codes for the data and to compare the generated ECC codes with ECC codes received with the data. The memory controllers are configured to permit different ECC coverage area sizes and/or different ECC code types for different portions of the memory device. | 06-20-2013 |
20130238863 | MEMORY AND SENSE PARAMETER DETERMINATION METHODS - Memory devices and methods for operating a memory include filtering a histogram of sensed data of the memory, and adjusting a parameter used to sense the memory using the filtered histogram. Filtering can be accomplished by averaging or summing, and may include weighting the sums or averages. | 09-12-2013 |
20130250707 | REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES - An apparatus has a controller. The controller is configured to address a non-defective memory block of a sequence of memory blocks in place of a defective memory block of the sequence of memory blocks such that the non-defective memory block replaces the defective memory block. The non-defective memory block is a proximate non-defective memory block following the defective memory block in the sequence of memory blocks that is available to replace the defective memory block. The controller is configured to apply a voltage-delay correction to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block. | 09-26-2013 |
20130275713 | BOOT PARTITIONS IN MEMORY DEVICES AND SYSTEMS - The present disclosure includes boot partitions in memory devices and systems, and methods associated therewith. One or more embodiments include an array of memory cells, wherein the array includes a boot partition and a number of additional partitions. Sequential logical unit identifiers are associated with the additional partitions, and a logical unit identifier that is not in sequence with the sequential logical unit identifiers is associated with the boot partition. | 10-17-2013 |
20130283130 | ERROR RECOVERY STORAGE ALONG A MEMORY STRING - Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes. | 10-24-2013 |
20130286736 | DETERMINING AND USING SOFT DATA IN MEMORY DEVICES AND SYSTEMS - The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data. | 10-31-2013 |
20130332798 | CORRECTING DATA IN A MEMORY - Methods of correcting data in a memory, and memories adapted to correct data, include prioritizing error correction of the read data in response to locations and likely states of known bad or questionable data positions of a segment of a memory array selected for reading. | 12-12-2013 |
20140003143 | FRACTIONAL BITS IN MEMORY CELLS | 01-02-2014 |
20140025943 | BOOTING IN SYSTEMS HAVING DEVICES COUPLED IN A CHAINED CONFIGURATION - The present disclosure includes methods, devices, and systems for booting in systems having devices coupled in a chained configuration. One or more embodiments include a host and a number of devices coupled to the host in a chained configuration, wherein at least one of the number of devices is a bootable device and the at least one bootable device is not directly coupled to the host. | 01-23-2014 |
20140047298 | MEMORY DEVICES FACILITATING DIFFERING DEPTHS OF ERROR DETECTION AND/OR ERROR CORRECTION COVERAGE - Memory devices facilitating differing depths of error detection and/or error correction coverage for differing portions of a memory array. | 02-13-2014 |
20140059251 | STATE CHANGE IN SYSTEMS HAVING DEVICES COUPLED IN A CHAINED CONFIGURATION - The present disclosure includes methods, devices, and systems for state change in systems having devices coupled in a chained configuration. A number of embodiments include a host and a number of devices coupled to the host in a chained configuration. The chained configuration includes at least one device that is not directly coupled to the host. The at least one device that is not directly coupled to the host is configured to change from a first communication state to a second communication state responsive to receipt of a command from the host. | 02-27-2014 |
20140063975 | INFERRING THRESHOLD VOLTAGE DISTRIBUTIONS ASSOCIATED WITH MEMORY CELLS VIA INTERPOLATION - The present disclosure includes apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation. A number of embodiments include determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values. | 03-06-2014 |
20140086000 | POWER CONSUMPTION CONTROL - The present disclosure includes apparatuses and methods for power consumption control. A number of embodiments include determining power consumption information for each phase in a combination of phases of a command, and authorizing execution of at least one of the phases in the combination based, at least partially, on the power consumption information determined for the at least one of the phases. | 03-27-2014 |
20140098614 | METHODS, DEVICES, AND SYSTEMS FOR DEALING WITH THRESHOLD VOLTAGE CHANGE IN MEMORY DEVICES - The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell. | 04-10-2014 |
20140104958 | PROGRAMMING METHODS AND MEMORIES - Methods of programming a memory and memories are disclosed. In at least one embodiment, a memory is programmed by determining a pretarget threshold voltage for a selected cell, wherein the pretarget threshold voltage is determined using pretarget threshold voltage values for at least one neighbor cell of the selected cell. | 04-17-2014 |
20140108678 | HOST CONTROLLER - The present disclosure includes methods, devices, and systems for controlling a memory device. One method for controlling a memory device embodiment includes storing device class dependent information and a command in one or more of host system memory and host controller memory, setting a pointer to the command in a register in a host controller, directing access to the one or more of host system memory and host controller memory with the memory device via the host controller; and executing the command with the memory device. | 04-17-2014 |
20140136926 | NON-SYSTEMATIC CODED ERROR CORRECTION - Methods are described that facilitate the detection and correction of data in memory systems or devices by encoding the data bits of a memory row or block in a non-systematic ECC code. This allows memory embodiments of the present invention to utilize reduced complexity error detection and correction hardware and/or routines to efficiently detect and correct corrupted user data in a segment of memory, such as a sector, word line row, or erase block. User data is not stored in a plaintext format in the memory array, allowing for an increased level of data security. The ECC code is distributed throughout the stored data in the memory segment, increasing the robustness of the ECC code and its resistance to damage or data corruption. | 05-15-2014 |
20140164867 | STOPPING CRITERIA FOR LAYERED ITERATIVE ERROR CORRECTION - The present disclosure includes apparatuses and methods related to stopping criteria for layered iterative error correction. A number of methods can include receiving a codeword with an error correction circuit, iteratively error correcting the codeword with the error correction circuit including parity checking the codeword on a layer-by-layer basis and updating the codeword after each layer. Methods can include stopping the iterative error correction in response to a parity check being correct for a particular layer. | 06-12-2014 |
20140185620 | PACKET DECONSTRUCTION/RECONSTRUCTION AND LINK-CONTROL - The present disclosure includes methods, devices, and systems for packet processing. One method embodiment for packet flow control includes deconstructing a transport layer packet into a number of link-control layer packets, wherein each of the link-control layer packets has an associated sequence number, communicating the number of link-control layer packets via a common physical connection for a plurality of peripheral devices, and limiting a number of outstanding link-control layer packets during the communication. | 07-03-2014 |
20140189468 | MEMORY DEVICES AND SYSTEMS CONFIGURED TO ADJUST A SIZE OF AN ECC COVERAGE AREA - Memory devices and systems having an array of memory cells arranged in a plurality of sectors and a plurality of ECC coverage areas, and control circuitry configured to adjust a size of one or more of the ECC coverage areas. | 07-03-2014 |
20140189475 | ERROR DETECTION AND CORRECTION SCHEME FOR A MEMORY DEVICE - An embodiment of a method of operating a memory device includes reading data from a memory array into a data buffer, checking the data using a first checker, checking the data using a second checker, and when an error is detected by the first checker and the error is not detected by the second checker returning the data to the memory array from the data buffer. | 07-03-2014 |
20140204693 | APPLYING A VOLTAGE-DELAY CORRECTION TO A NON-DEFECTIVE MEMORY BLOCK THAT REPLACES A DEFECTIVE MEMORY BLOCK BASED ON THE ACTUAL LOCATION OF THE NON-DEFECTIVE MEMORY BLOCK - In an embodiment, a defective memory block is replaced with a non-defective memory block, and a voltage-delay correction is applied to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block. | 07-24-2014 |
20140233314 | MEMORY CELL COUPLING COMPENSATION - Methods for memory cell coupling compensation and apparatuses configured to perform the same are described. One or more methods for memory cell coupling compensation includes determining a state of a memory cell using a voltage that is changed in accordance with a first memory cell coupling compensation voltage, performing an error check on the state of the memory cell, and determining the state of the memory cell using a voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing. | 08-21-2014 |
20140281811 | OBJECT ORIENTED MEMORY IN SOLID STATE DEVICES - The present disclosure includes methods, devices, and systems for object oriented memory in solid state devices. One embodiment of a method for object oriented memory in solid state devices includes accessing a defined set of data as a single object in an atomic operation manner, where the accessing is from a source other than a host. The embodiment also includes storing the defined set of data as the single object in a number of solid state memory blocks as formatted by a control component of a solid state device that includes the number of solid state memory blocks. | 09-18-2014 |
20140286094 | DATA MODULATION FOR GROUPS OF MEMORY CELLS - Methods, devices, and systems for data modulation for groups of memory cells. Data modulation for groups of memory cells can include modulating N units of data to a combination of programmed states. Each memory cell of a group of G number of memory cells can be programmed to one of M number of programmed states, where M is greater than a minimum number of programmed states needed to store N/G units of data in one memory cell, and where the programmed state of each memory cell of the group is one of the combination of programmed states. | 09-25-2014 |
20140289505 | BOOT PARTITIONS IN MEMORY DEVICES AND SYSTEMS - The present disclosure includes boot partitions in memory devices and systems, and methods associated therewith. One or more embodiments include an array of memory cells, wherein the array includes a boot partition and a number of additional partitions. Sequential logical unit identifiers are associated with the additional partitions, and a logical unit identifier that is not in sequence with the sequential logical unit identifiers is associated with the boot partition. | 09-25-2014 |
20140298088 | DATA CONDITIONING TO IMPROVE FLASH MEMORY RELIABILITY - Methods for managing data stored in a memory device facilitate managing utilization of memory of different densities. The methods include reading first data from a first number of pages or blocks of memory cells having a first density, performing a data handling operation on the read first data to generate second data, and writing the second data to a second number of pages or blocks of memory cells having a second density, wherein the second density is different than the first density, and wherein the second number is different than the first number. | 10-02-2014 |
20140316684 | MULTIPLE ENGINE SEQUENCER - Multiple engine sequencers in memory interfaces are disclosed. Individual sequencer engines of multiple engine sequencers perform at least portions of their respective operations in parallel with other individual sequencer engine operations performed in the memory interface. In at least one embodiment, sequencer engine operations are performed at least partially concurrently with other sequencer engine operations in the memory interface. | 10-23-2014 |
20140325317 | ERROR RECOVERY STORAGE ALONG A MEMORY STRING - Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes. | 10-30-2014 |
20140331003 | FAULT-TOLERANT NON-VOLATILE INTEGRATED CIRCUIT MEMORY - Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code consumes relatively little extra memory space. In one embodiment, the convolutional code is spread over portions of a plurality of memory devices, rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices. | 11-06-2014 |
20140355355 | METHODS, DEVICES, AND SYSTEMS FOR ADJUSTING SENSING VOLTAGES IN DEVICES - The present disclosure includes methods, devices, and systems for adjusting sensing voltages in devices. One or more embodiments include memory cells, and a controller configured to perform a sense operation on the memory cells using a sensing voltage to determine a quantity of the memory cells having a threshold voltage (Vt) greater than the sensing voltage and adjust a sensing voltage used to determine a state of the memory cells based, at least partially, on the determined quantity of memory cells. | 12-04-2014 |
20150023110 | INFERRING THRESHOLD VOLTAGE DISTRIBUTIONS ASSOCIATED WITH MEMORY CELLS VIA INTERPOLATION - The present disclosure includes apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation. A number of embodiments include determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values. | 01-22-2015 |
20150033096 | MEMORY DEVICES AND CONFIGURATION METHODS FOR A MEMORY DEVICE - A memory device has a plurality of individually erasable blocks of memory cells and a controller configured to configure a first block of memory cells in a first configuration comprising one or more groups of overhead data memory cells, and to configure a second block of memory cells in a second configuration comprising one or more groups of user data memory cells and at least one group of overhead data memory cells. The first configuration is different than the second configuration. At least one group of overhead data memory cells of the second block of memory cells comprises a different storage capacity than at least one group of overhead data memory cells of the first block of memory cells. | 01-29-2015 |
20150063031 | DYNAMIC PROGRAM WINDOW DETERMINATION IN A MEMORY DEVICE - A memory device has an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to determine a program window after a portion of a particular programing operation performed on the memory device is performed and before a subsequent portion of the particular programing operation performed on the memory device is performed. The controller is configured to determine the program window responsive to an amount of program disturb experienced by a particular state of a memory cell. The controller is configured to perform the subsequent portion of the particular programing operation performed on the memory device using the determined program window. | 03-05-2015 |