Patent application number | Description | Published |
20080266955 | SRAM CELL CONTROLLED BY FLASH MEMORY CELL - First and second complimentary static random-access-memory cell bit lines are coupled to first and second bit nodes through first and second access transistors controlled by a word line. A first inverter has an input coupled to the first bit node and an output coupled to the second bit node. A second inverter has an input coupled to the second bit node and an output coupled to the first bit node through a first transistor switch. A transistor switch is coupled between the output of a non-volatile memory cell and the first bit node. A control circuit coupled to the gate of the transistor switch. Either the drive level of the non-volatile memory cell is selected to overpower the output of the second inverter or the second inverter is decoupled from the first bit node while the output of the non-volatile memory cell is coupled to the first bit node. | 10-30-2008 |
20090094475 | DELAY LOCKED LOOP FOR AN FPGA ARCHITECTURE - A DLL provides a deskew mode for aligning a reference clock that passes through a clock distribution tree to a feedback by adding additional delay to the feedback clock to align the feedback clock with reference clock at one cycle later. A 0 ns clock-to-out mode is provided by adding additional delay to account for an input buffer into a feedback path. The feedback clock can be doubled by a clock doubler with 50% duty cycle adjustment disposed in the feedback path. Flexible timing is aligning the reference clock to the feedback clock is obtained with additional delay elements disposed in the feedback and reference clock paths. | 04-09-2009 |
20090212343 | NON-VOLATILE TWO-TRANSISTOR PROGRAMMABLE LOGIC CELL AND ARRAY LAYOUT - A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor. | 08-27-2009 |
20100014357 | FLASH-BASED FPGA WITH SECURE REPROGRAMMING - A flash-based programmable integrated circuit includes programmable circuitry, a flash memory array coupled to the programmable circuitry for configuring it, flash programming circuitry for programming the flash memory array, and an on-chip intelligence, such as a microcontroller or state machine, coupled to the programming circuitry to program the flash memory from off-chip data supplied via an I/O pad, or to refresh the data stored in the flash memory to prevent it from degrading. | 01-21-2010 |
20100038697 | NON-VOLATILE TWO-TRANSISTOR PROGRAMMABLE LOGIC CELL AND ARRAY LAYOUT - A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within the memory-transistor well. A switch transistor including spaced-apart source and drain regions is formed within the switch-transistor well region. A floating gate is insulated from and self aligned with the source and drain regions of the memory transistor and switch transistor. A control gate is disposed above and aligned to the floating gate and with the source and drain regions of the memory transistor and the switch transistor. | 02-18-2010 |
20100100864 | FLEXIBLE CARRY SCHEME FOR FIELD PROGRAMMABLE GATE ARRAYS - A fast, flexible carry scheme for use in clustered field programmable gate array architectures is described. Each cluster has a cluster carry input node, a cluster carry output node, a cluster carry output circuit having an output coupled to the cluster carry output node, a first input coupled to the cluster carry input node, and a second input and a plurality of logic modules each comprising a logic function generator circuit coupled to a carry circuit. The logic modules are coupled in a series carry arrangement between the cluster carry input node and the second input of the cluster carry output circuit such that the least significant bit of an arithmetic logic circuit can be programmably placed in any of the logic modules. | 04-22-2010 |
20100134142 | PROGRAMMABLE LOGIC DEVICE WITH A MICROCONTROLLER-BASED CONTROL SYSTEM - A computer program product in a computer-readable medium for use in a microcontroller-based control system in a programmable logic integrated circuit device. The computer program product comprises first instructions for initializing the device, second instructions for reading programming data from a data source external to the programmable logic integrated circuit device, third instructions for transferring the programming data into control elements internal to the device. Provision is made for fourth instructions for saving a part of the internal logic state of the user logic programmed into the device into a non-volatile memory block and for fifth instructions for restoring a part of the internal logic state of the user logic programmed into the device from a non-volatile memory block. The device comprises a microcontroller block and a programmable logic block with programming circuitry, and has a sub-bus which couples the microcontroller block to the programming circuitry. | 06-03-2010 |
20100156459 | PROGRAMMABLE DELAY LINE COMPENSATED FOR PROCESS, VOLTAGE, AND TEMPERATURE - A delay line compensated for process, voltage, and temperature variations, includes a delay locked loop (DLL) configured to delay a digital signal by the clock period of the digital signal, the DLL including a DLL delay line arranged as a plurality of cascaded sub-delay lines each sub-delay line providing one of a plurality of delay quanta in response to a digital control signal. A fractionating circuit is configured to generate a digital delay line control signal that is a fraction of the digital control signal. A digital delay line is arranged as a plurality of cascaded sub-delay lines each sub-delay line providing one of a plurality of delay quanta in response to the digital delay line control signal. | 06-24-2010 |
20120280711 | FPGA RAM BLOCKS OPTIMIZED FOR USE AS REGISTER FILES - A random access memory circuit adapted for use in a field programmable gate array integrated circuit device is disclosed. The FPGA has a programmable array with logic modules and routing interconnects programmably coupleable to the logic modules and the RAM circuit. The RAM circuit has three ports: a first readable port, a second readable port, and a writeable port. The read ports may be programmably synchronous or asynchronous and have a programmably bypassable output pipeline register. The RAM circuit is especially well adapted for implementing register files. A novel interconnect method is also described. | 11-08-2012 |
20130107635 | COMMON DOPED REGION WITH SEPARATE GATE CONTROL FOR A LOGIC COMPATIBLE NON-VOLATILE MEMORY CELL | 05-02-2013 |
20130271180 | FPGA RAM BLOCKS OPTIMIZED FOR USE AS REGISTER FILES - A random access memory circuit adapted for use in a field programmable gate array integrated circuit device is disclosed. The FPGA has a programmable array with logic modules and routing interconnects programmably coupleable to the logic modules and the RAM circuit. The RAM circuit has three ports: a first readable port, a second readable port, and a writeable port. The read ports may be programmably synchronous or asynchronous and have a programmably bypassable output pipeline register. The RAM circuit is especially well adapted for implementing register files. A novel interconnect method is also described. | 10-17-2013 |
20140313834 | RETENTION OPTIMIZED MEMORY DEVICE USING PREDICTIVE DATA INVERSION - A method for storing data. The method includes providing an addressable memory including a memory space, wherein the memory space includes a plurality of memory cells. The method includes configuring the addressable memory such that a majority of the plurality of memory cells in the memory space stores internal data values in a preferred bias condition when a first external data state of one or more external data states is written to the memory space, wherein the first external data state is opposite the preferred bias condition. | 10-23-2014 |