Patent application number | Description | Published |
20080204877 | ILLUMINATION SYSTEM OR PROJECTION LENS OF A MICROLITHOGRAPHIC EXPOSURE SYSTEM - In some embodiments, the disclosure provides an optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, having an optical system axis and at least one element group including three birefringent elements each of which includes optically uniaxial material and having an aspheric surface, wherein a first birefringent element of the group has a first orientation of its optical crystal axis, a second birefringent element of the group has a second orientation of its optical crystal axis, wherein the second orientation can be described as emerging from a rotation of the first orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element of the group has a third orientation of its optical crystal axis, wherein the third orientation can be described as emerging from a rotation of the second orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof. | 08-28-2008 |
20090021830 | PROJECTION LENS OF A MICROLITHOGRAPHIC EXPOSURE SYSTEM - In some embodiments, the disclosure provides a projection lens configured to configured to image radiation from an object plane of the projection lens to an image plane of the projection lens. The projection lens can, for example, be used in a microlithographic projection exposure apparatus. The projection lens includes a last lens on the image plane side. The last lens includes at least one intrinsically birefringent material. The material can be, for example, magnesium oxide, a garnet, lithium barium fluoride and/or a spinel. The last lens can have a thickness d which satisfies the condition 0.8*y | 01-22-2009 |
20090036289 | Optical composite material and method for its production - An optical composite material comprises an amorphous optical material ( | 02-05-2009 |
20090201478 | TRANSMITTING OPTICAL ELEMENT AND OBJECTIVE FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A transmitting optical element ( | 08-13-2009 |
20090251673 | TRANSMITTING OPTICAL ELEMENT WITH LOW FOREIGN-ELEMENT CONTAMINATION - A transmitting optical element of polycrystalline material that includes crystallites of magnesium spinel MgAl | 10-08-2009 |
20090284831 | PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element (L | 11-19-2009 |
20110235013 | PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property. | 09-29-2011 |
20120019799 | OPTICAL ASSEMBLY - An optical assembly has at least one mirror with a mirror body. The latter is carried by a support body, which has a first support body portion and a second support body portion. An at least thermally separating region is arranged between the two support body portions. At least one surface portion of at least one of the support body portions or of a body thermally coupled thereto is modified in such a way that a thermal emission coefficient ε | 01-26-2012 |
20120327384 | MIRROR ELEMENTS FOR EUV LITHOGRAPHY AND PRODUCTION METHODS THEREFOR - A method for the production of a mirror element ( | 12-27-2012 |
20130120863 | SUBSTRATES FOR MIRRORS FOR EUV LITHOGRAPHY AND THEIR PRODUCTION - For the production of mirrors for EUV lithography, substrates are suggested having a mean relative thermal longitudinal expansion of no more than 10 ppb across a temperature difference ΔT of 15° C. and a zero-crossing temperature in the range between 20° C. and 40° C. For this purpose, at least one first and one second material having low thermal expansion coefficients and opposite gradients of the relative thermal expansion as a function of temperature are selected and a substrate is produced by mixing and bonding these materials. | 05-16-2013 |
20140190212 | MIRROR ELEMENTS FOR EUV LITHOGRAPHY AND PRODUCTION METHODS THEREFOR - A method for the production of a mirror element ( | 07-10-2014 |