Wilfried
Heidelmann Wilfried, Ludwigsburg DE
Patent application number | Description | Published |
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20110250029 | METHOD FOR MACHINING THE FLANKS OF SUBSTANTIALLY CYLINDRICAL GEARING HAVING MODIFIED CROWNING, IN A DIAGONAL ROLLING METHOD - The invention concerns a method of machining the tooth flanks of substantially cylindrical, but crowning-modified gears through a diagonal generating process employing a worm-shaped tool which is modified with a crowning in the direction of its rotary axis, wherein the crowning can be positive or negative (concave crowning), wherein by matching the crowning of the tool to the diagonal ratio, a flank twist is generated by means of the tool and superimposed on the natural flank twist, such that the result of said superposition equals the flank twist required for the work piece. | 10-13-2011 |
Michel Wilfried, Riedenburg DE
Patent application number | Description | Published |
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20090003741 | Body-Side Suspension Strut Bearing For Wheel Suspensions - The invention relates to a body-side suspension strut bearing for wheel suspensions of motor vehicles, with a suspension strut which consists at least of a telescoping shock absorber and a bearing spring, and which is supported by way of a shock absorber bearing on the body and by way of another bearing on the wheel suspension elements of the motor vehicle, there being a joint between the body and the suspension strut. A suspension strut bearing which is favorable in terms of construction, production engineering and function, is achieved by the joint being formed by a universal joint with two crossing axes of rotation. | 01-01-2009 |
Vollmar Wilfried, Soest-Deiringsen DE
Patent application number | Description | Published |
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20120027916 | ARRANGEMENT AND METHOD FOR MEASUREMENT OF THE TEMPERATURE AND OF THE THICKNESS GROWTH OF SILICON RODS IN A SILICON DEPOSITION REACTOR - An arrangement for measurement of temperature and thickness growth of silicon rods in a silicon deposition reactor employs a temperature measurement device located outside the reactor. Continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process is achieved with a contactlessly operating temperature measurement device arranged outside the silicon deposition reactor in front of a viewing window. The temperature measurement device can be pivoted horizontally about a rotation axis by a rotating drive. The pivoting axis runs parallel to a longitudinal axis of the silicon rod, and the central axis of the temperature measurement device runs through the pivoting axis. | 02-02-2012 |