Patent application number | Description | Published |
20080261333 | Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same - A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550° C. | 10-23-2008 |
20080272381 | ORGANIC LIGHT EMITTING DISPLAY WITH SINGLE CRYSTALLINE SILICON TFT AND METHOD OF FABRICATING THE SAME - Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate. | 11-06-2008 |
20090191673 | Method of manufacturing thin film transistor - A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer. | 07-30-2009 |
20100041214 | Single crystal substrate and method of fabricating the same - A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer. | 02-18-2010 |
20100059750 | BOTTOM GATE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region. | 03-11-2010 |
20100193797 | Stacked transistors and electronic devices including the same - Stacked transistors and electronic devices including the stacked transistors. An electronic device includes a substrate, a first transistor on the substrate and including a first active layer, a first gate, and a first gate insulating layer between the first active layer and the first gate, a first metal line spaced apart from the first gate on the substrate, a first insulating layer covering the first transistor and the first metal line, and a second transistor on the first insulating layer between the first transistor and the first metal line, and including a second active layer, a second gate, and a second gate insulating layer between the second active layer and the second gate. | 08-05-2010 |
20100200834 | Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same - Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film. | 08-12-2010 |
20100208368 | Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor - A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape. | 08-19-2010 |
20110008920 | Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor - A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape. | 01-13-2011 |