Patent application number | Description | Published |
20090049431 | METHOD AND COMPILER OF COMPILING A PROGRAM - The present invention provides a method and a compiler of compiling a source program. According to an aspect of the present invention, there is provided a method of compiling a source program comprising: identifying a hint related to vector aligning when syntax analyzing said source program; and generating a simplified code based on said identified hint related to vector aligning when generating a code. | 02-19-2009 |
20090089559 | METHOD OF MANAGING DATA MOVEMENT AND CELL BROADBAND ENGINE PROCESSOR USING THE SAME - A method of managing data movement in a cell broadband engine processor, comprising: determining one or more idle synergistic processing elements among multiple SPEs in the cell broadband engine processor as a managing SPE, and informing a computing SPE among said multiple SPEs of a starting effective address of a LS of said managing SPE and an effective address for a command queue; and said managing SPE managing movement of data associated with computing of said computing SPE based on the command queue from the computing SPE. | 04-02-2009 |
20100179320 | PREPARATION METHODS OF AZOXYSTROBIN AND ITS ANALOGS - Preparation method of a compound of general formula (I) comprises the following steps: (1) a compound of general formula (II) reacts with a formylating agent in an aprotic solvent at a temperature between −20° C. and 200° C. in the presence of a Lewis acid, then an organic base is added to promote the reaction to obtain an intermediate product; (2) the above intermediate product reacts with a methylating agent in the presence of an alkali at a temperature between −20° C. and 100° C. to obtain the compound of formula (I). | 07-15-2010 |
20120297092 | MANAGING DATA MOVEMENT IN A CELL BROADBAND ENGINE PROCESSOR - A cell broadband engine processor includes memory, a power processing element (PPE) coupled with the memory, and a plurality of synergistic processing elements. The PPE creates a SPE as a computing SPE for an application. The PPE determines idles ones of the plurality of SPEs, and creates a managing SPE from one of the idle SPEs. Each of the plurality of SPEs is associated with a local storage. The managing SPE informs the computing SPE of a starting effective address of the local storage of the managing SPE and an effective address for a command queue. The managing SPE manages movement of data associated with computing of the computing SPE based on one or more commands associated with the application. A computing SPE sends the one or more commands to the managing SPE for insertion into the command queue. | 11-22-2012 |
20130203611 | AUTOMATIC SLIDE LOADING DEVICE FOR MICRO ARRAY SCANNER AND ITS METHODS OF USE - An automatic slide loading device for microarray scanner comprises slide holders ( | 08-08-2013 |
20130269598 | PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL BY PHYSICAL VAPOR TRANSPORT METHOD AND ANNEALING SILICON CARBIDE SINGLE CRYSTAL IN SITU - A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process. | 10-17-2013 |
20130313575 | SEMI-INSULATING SILICON CARBIDE MONOCRYSTAL AND METHOD OF GROWING THE SAME - A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×10 | 11-28-2013 |
20150085349 | NONLINEAR OPTICAL DEVICE MANUFACTURED WITH 4H SILICON CARBIDE CRYSTAL - Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam ( | 03-26-2015 |