| Patent application number | Description | Published |
|---|
| 20090001353 | HETEROPYRENE-BASED SEMICONDUCTOR MATERIALS FOR ELECTRONIC DEVICES AND METHODS OF MAKING THE SAME - A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate. | 01-01-2009 |
| 20090001354 | HETEROCYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C. | 01-01-2009 |
| 20090312553 | N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C. | 12-17-2009 |
| 20110266523 | SEMICONDUCTING DEVICES AND METHODS OF PREPARING - An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound. | 11-03-2011 |
| 20110269265 | METHODS OF PREPARING SEMICONDUCTIVE COMPOSITIONS AND DEVICES - An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound. | 11-03-2011 |
| 20110269966 | SEMICONDUCTING ARTICLES - An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a thin organic semiconducting layer of the corresponding arylene diimide. This semiconducting layer can be used in various semiconductive articles such as organic light emitting diode (OLED), photodetector, sensor, logic circuit, memory element, capacitor, photovoltaic (PV) cell, or electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble and easily coated precursor compound. | 11-03-2011 |
| 20110269967 | AROMATIC AMIC ACIDS OR AMIC ESTERS AND COMPOSITIONS - Novel amic acids and amic esters can be thermally converted into corresponding arylene diimides. These amic acids and amic ester can be used as precursors to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimides need not be coated out of solvent in which they may be insoluble, but they can be generated in situ from a solvent-soluble, easily coated amic acid or amic ester. | 11-03-2011 |
| 20110291076 | ARTICLES CONTAINING COATINGS OF AMIC ACID SALTS - An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices. | 12-01-2011 |
| 20110294257 | METHODS OF PROVIDING SEMICONDUCTOR LAYERS FROM AMIC ACID SALTS - A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst. | 12-01-2011 |
| 20110295010 | AROMATIC AMIC ACID SALTS AND COMPOSITIONS - Aromatic non-polymeric amic acid salts are designed to be thermally converted into corresponding arylene diimides. These aromatic, non-polymeric amic acid salts can be used to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the amic acid salt acts as an internal catalyst. | 12-01-2011 |
