Patent application number | Description | Published |
20080230709 | ENERGY DISCRIMINATING DETECTOR DIFFERENT MATERIALS DIRECT CONVERSION LAYERS - A diagnostic imaging system includes a high frequency electromagnetic energy source that emits a beam of high frequency electromagnetic energy toward an object to be imaged. An energy discriminating (ED) detector receives high frequency electromagnetic energy emitted by the high frequency electromagnetic energy source. The ED detector includes a first direct conversion layer and a second direct conversion layer. The first direct conversion layer comprises a first direct conversion material and the second direct conversion layer comprises a second direct conversion material that is different from the first direct conversion material. A data acquisition system (DAS) is operably connected to the ED detector and a computer operably connected to the DAS. | 09-25-2008 |
20080308738 | STRUCTURE OF A SOLID STATE PHOTOMULTIPLIER - A solid-state photomultiplier (SSPM) includes an optical isolation structure therein. The SSPM includes a substrate and an epitaxial diode layer positioned on the substrate. A plurality of avalanche photodiodes (APDs) are fabricated on the epitaxial diode layer and the optical isolation structure is positioned about the plurality of APDs to separate each of the plurality of APDs from adjacent APDs. The optical isolation structure contains at least one of a light absorbing material and a light reflecting material deposited therein to reduce optical crosstalk and dark count rate in the SSPM. | 12-18-2008 |
20090039273 | HIGH DQE PHOTON COUNTING DETECTOR USING STATISTICAL RECOVERY OF PILE-UP EVENTS - A photon-counting detector includes a direct conversion material constructed to directly convert an energy of at least one incident photon to an electrical signal indicative of the energy level of the at least one individual photon and a data acquisition system (DAS). The DAS includes a first comparator having a first signal level threshold that is less than an electrical signal level that is indicative of a maximum energy of a spectrum of photons, the first comparator configured to output a count when the electrical signal level exceeds the first signal level threshold, and a second comparator having a second signal level threshold that is greater than or equal to the electrical signal level indicative of the maximum energy of the spectrum of photons, the second comparator configured to output a count when the electrical signal exceeds the second signal level threshold. The DAS further includes a device configured to determine a photon count based on the counts from the first and second comparators and to output the photon count for image reconstruction. | 02-12-2009 |
20090080601 | METHOD AND APPARATUS FOR FLEXIBLY BINNING ENERGY DISCRIMINATING DATA - A CT detector includes a direct conversion material configured to generate electrical charge upon reception of x-rays, a plurality of metallized anodes configured to collect electrical charges generated in the direct conversion material, at least one readout device, and a redistribution layer having a plurality of electrical pathways configured to route the electrical charges from the plurality of metallized anodes to the at least one readout device. A plurality of switches is coupled to the plurality of electrical pathways between the plurality of metallized anodes and the at least one readout device, wherein each of the plurality of switches includes an input line electrically coupled to one of the plurality of metallized anodes, a first output node electrically coupled to the at least one readout device, and a second output node electrically coupled to at least one other switch of the plurality of switches. | 03-26-2009 |
20090129538 | METHOD AND SYSTEM OF ENERGY INTEGRATING AND PHOTON COUNTING USING LAYERED PHOTON COUNTING DETECTOR - A diagnostic imaging system includes an x-ray source that emits a beam of x-ray energy toward an object to be imaged and an energy discriminating (ED) detector that receives the x-ray energy emitted by the x-ray energy source. The ED detector includes a first layer having a first thickness, wherein the first layer comprises a semiconductor configurable to operate in at least an integrating mode and a second layer having a second thickness greater than the first thickness, and configured to receive x-rays that pass through the first layer. The system further includes a data acquisition system (DAS) operably connected to the ED detector and a computer that is operably connected to the DAS. The computer is programmed to identify saturated data in the second layer and substitute the saturated data with non-saturated data from a corresponding pixel in the first layer. | 05-21-2009 |
20100019163 | Radiation Detector Power Management For Portable/Handheld Applications - A radiation detector includes at least one multiple channel pixellated detector driven via a plurality of pixellated anode electrodes and at least one planar cathode electrode. Each detector is configured to reduce the number of active pixellated anode electrodes until a rate of events detected via at least one corresponding planar cathode electrode exceeds a preset threshold above a background count rate within a predetermined time period. | 01-28-2010 |
20100276777 | LOW CAPACITANCE PHOTODIODE ELEMENT AND COMPUTED TOMOGRAPHY DETECTOR - A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer. | 11-04-2010 |
20110024711 | APPARATUS FOR REDUCING PHOTODIODE THERMAL GAIN COEFFICIENT AND METHOD OF MAKING SAME - An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer. | 02-03-2011 |
20110297838 | CHARGE LOSS CORRECTION - The present disclosure relates to the correction of charge loss in a radiation detector. In one embodiment, correction factors for charge loss may be determined based on depth of interaction and lateral position within a radiation detector of a charge creating event. The correction factors may be applied to subsequently measured signals to correct for the occurrence of charge loss in the measured signals. | 12-08-2011 |
20130083887 | DETECTOR MODULES AND METHODS OF MANUFACTURING - Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side. | 04-04-2013 |
20130168750 | PHOTODIODE ARRAY AND METHODS OF FABRICATION - Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions. | 07-04-2013 |
20130168796 | PHOTODIODE ARRAYS AND METHODS OF FABRICATION - Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes. | 07-04-2013 |
20130230134 | APPARATUS FOR REDUCING PHOTODIODE THERMAL GAIN COEFFICIENT - An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer. | 09-05-2013 |