Patent application number | Description | Published |
20090063074 | Mask Haze Early Detection - Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property. | 03-05-2009 |
20100084683 | LIGHT EMITTING DIODE PACKAGE AND FABRICATING METHOD THEREOF - A light emitting diode (LED) package is provided. The LED package includes a carrier, a package housing, a strength enhancement structure, an ESD protector and an LED chip. The carrier has a first surface and a second surface. The carrier includes a first electrode and a second electrode, wherein a gap is between the first electrode and the second electrode. The package housing is disposed on the carrier and has a first aperture and a second aperture. The first surface is exposed by the first aperture while the second surface is exposed by the second aperture. The strength enhancement structure is disposed at the gap. The ESD protector is disposed on the carrier and located within the second aperture. The LED chip is disposed on the carrier and located within the first aperture, wherein the ESD protector and the LED chip is electrically connected to the carrier. | 04-08-2010 |
20120235063 | Systems and Methods Providing Electron Beam Writing to a Medium - A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams. | 09-20-2012 |
20120264062 | ELECTRON BEAM LITHOGRAPHY SYSTEM AND METHOD FOR IMPROVING THROUGHPUT - An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer. | 10-18-2012 |
20130146780 | SYSTEMS AND METHODS PROVIDING ELECTRON BEAM WRITING TO A MEDIUM - A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams. | 06-13-2013 |
20130157389 | Multiple-Patterning Overlay Decoupling Method - A method for fabricating a semiconductor device is disclosed. An exemplary method includes forming a first structure in a first layer by a first exposure and determining placement information of the first structure. The method further includes forming a second structure in a second layer overlying the first layer by a second exposure and determining placement information of the second structure. The method further includes forming a third structure including first and second substructures in a third layer overlying the second layer by a third exposure. Forming the third structure includes independently aligning the first substructure to the first structure and independently aligning the second substructure to the second structure | 06-20-2013 |
20130203001 | Multiple-Grid Exposure Method - A method for fabricating a semiconductor device is disclosed. An exemplary method includes receiving an integrated circuit (IC) layout design including a target pattern on a grid. The method further includes receiving a multiple-grid structure. The multiple-grid structure includes a number of exposure grid segments offset one from the other by an offset amount in a first direction. The method further includes performing a multiple-grid exposure to expose the target pattern on a substrate and thereby form a circuit feature pattern on the substrate. Performing the multiple-grid exposure includes scanning the substrate with the multiple-grid structure in a second direction such that a sub-pixel shift of the exposed target pattern occurs in the first direction, and using a delta time (Δt) such that a sub-pixel shift of the exposed target pattern occurs in the second direction. | 08-08-2013 |
20130232453 | NON-DIRECTIONAL DITHERING METHODS - A method of data preparation in lithography processes is described. The method includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, converting the IC layout design GDS grid to a first exposure grid, applying a non-directional dither technique to the first exposure, coincident with applying dithering to the first expose grid, applying a grid shift to the first exposure grid to generate a grid-shifted exposure grid and applying a dither to the grid-shifted exposure grid, and adding the first exposure grid (after receiving dithering) to the grid-shifted exposure grid (after receiving dithering) to generate a second exposure grid. | 09-05-2013 |
20130232455 | ERROR DIFFUSION AND GRID SHIFT IN LITHOGRAPHY - The present disclosure involves a method of data preparation in lithography processes. The method of data preparation includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, and converting the IC layout design GDS grid to a second exposure grid by applying an error diffusion and a grid shift technique to a sub-pixel exposure grid. | 09-05-2013 |
20130273474 | Grid Refinement Method - The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size S | 10-17-2013 |
20130273475 | Grid Refinement Method - The present disclosure provide one embodiment of a method of a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel area S1 to generate a data grid having a second pixel area S2 that is equal to n | 10-17-2013 |
20130323918 | METHODS FOR ELECTRON BEAM PATTERNING - A method for electron-beam patterning includes forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer on the conductive material layer; forming a resist layer on the BARC layer; and directing an electron beam (e-beam) to the sensitive resist layer for an electron beam patterning process. The BARC layer is designed such that a top electrical potential of the resist layer is substantially zero during the e-beam patterning process. | 12-05-2013 |
20130327962 | Electron Beam Lithography System and Method For Improving Throughput - An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer. | 12-12-2013 |
20130330670 | Electron Beam Lithography System and Method for Improving Throughput - An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer. | 12-12-2013 |
20140004468 | MULTIPLE-GRID EXPOSURE METHOD | 01-02-2014 |
20140217305 | SYSTEMS AND METHODS PROVIDING ELECTRON BEAM WRITING TO A MEDIUM - A method for electron-beam writing to a medium includes positioning the medium within an e-beam writing machine so that the medium is supported by a stage and is exposed to an e-beam source. The method also includes writing a pattern to the medium using a plurality of independently-controllable beams of the e-beam source, in which the pattern comprises a plurality of parallel strips. Each of the parallel strips is written using multiple ones of the independently-controllable beams. | 08-07-2014 |
20140368806 | Grid Refinement Method - The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size S1 to generate an alternating data grid having a second pixel size S2 that is 12-18-2014 | |
20150040079 | Method for Electron Beam Proximity Correction with Improved Critical Dimension Accuracy - The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a feature; fracturing the feature into a plurality of polygons that includes a first polygon; assigning target points to edges of the first polygon; calculating corrected exposure doses to the first polygon, wherein each of the correct exposure doses is determined based on a respective one of the target points by simulation; determining a polygon exposure dose to the first polygon based on the corrected exposure doses; and preparing a tape-out data for lithography patterning, wherein the tape-out data defines the plurality of polygons and a plurality of polygon exposure doses paired with the plurality of polygons. | 02-05-2015 |
20150052489 | LONG-RANGE LITHOGRAPHIC DOSE CORRECTION - A method of quantifying a lithographic proximity effect and determining a lithographic exposure dosage is disclosed. In an exemplary embodiment, the method for determining an exposure dosage comprises receiving a design database including a plurality of features intended to be formed on a workpiece. A target region of the design database is defined such that the target region includes a target feature. A region of the design database proximate to the target region is also defined. An approximation for the region is determined, where the approximation represents an exposed area within the region. A proximity effect of the region upon the target feature is determined based on the approximation for the region. A total proximity effect for the target feature is determined based on the determined proximity effect of the region upon the target feature. | 02-19-2015 |
20150077731 | SYSTEMS AND METHODS FOR HIGH-THROUGHPUT AND SMALL-FOOTPRINT SCANNING EXPOSURE FOR LITHOGRAPHY - The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier. | 03-19-2015 |