Patent application number | Description | Published |
20100330730 | Manufacturing Method of Solar Cell - The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion efficiency, and each electrode layer is formed by using a mask layer to perform a vapor deposition process, without requiring any mask lithography or etching process. Of course, the issue of a high-temperature process that deteriorates the quality of the wafer no longer exists. | 12-30-2010 |
20110003420 | Fabrication method of gallium nitride-based compound semiconductor - The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively. | 01-06-2011 |
20110168670 | Patterned Sapphire Substrate Manufacturing Method - A patterned sapphire substrate manufacturing method uses two-section dip etching procedure to improve the lateral etching rate at each etching position, so as to produce a concave-convex pattern composed of a plurality of triangular pyramid structures protruded from a surface onto an upper surface of a sapphire substrate, such that less planar area of the sapphire substrate surface will remain, and a mixed solution of sulfuric acid and phosphoric acid is used in a first dip etching step, and pure phosphoric acid or a mixed solution of sulfuric acid and phosphoric acid is used in a second dip etching step for etching the sapphire substrate to control the inclination of each triangular pyramid structure precisely, and providing a better light extraction rate for later manufactured light emitting diodes. | 07-14-2011 |
20120015143 | Epitaxial substrate having nano-rugged surface and fabrication thereof - The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production. | 01-19-2012 |
20120112158 | EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF - The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate. | 05-10-2012 |
20120193764 | NANOSTRUCTURING PROCESS FOR INGOT SURFACE, WAFER MANUFACTURING METHOD, AND WAFER USING THE SAME - The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing. | 08-02-2012 |
20120273821 | METHOD FOR PATTERNING AN EPITAXIAL SUBSTRATE, A LIGHT EMITTING DIODE AND A METHOD FOR FORMING A LIGHT EMITTING DIODE - A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns. | 11-01-2012 |
20120305965 | LIGHT EMITTING DIODE SUBSTRATE AND LIGHT EMITTING DIODE - A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 μm. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency. | 12-06-2012 |
20130095027 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm. | 04-18-2013 |
20130095028 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds. | 04-18-2013 |
20130133569 | Crystal Growth Device - A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone. | 05-30-2013 |
20130136918 | CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm. | 05-30-2013 |
20130181240 | COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREOF AND LIGHT EMITTING DEVICE HAVING THE SAME - The present invention relates to a manufacturing method of a composite substrate. The method includes the steps of: providing a substrate; providing a precursor of group III elements and a precursor of nitrogen (N) element alternately in an atomic layer deposition (ALD) process or a plasma-enhanced atomic layer deposition (PEALD) process so as to deposit a nitride buffer layer on the substrate; and annealing the nitride buffer layer on the substrate at a temperature in the range of 300° C. to 1600° C. | 07-18-2013 |
20130291936 | SOLAR CELL - A solar cell is provided. The solar cell includes a substrate, a first electrode, a second electrode, a seed layer, and a plurality of nanorods. The substrate has a first surface and a second surface opposite to each other. A conductive type of a portion of the substrate adjacent to the first surface is first conductive type, and a conductive type of the remaining portion of the substrate is second conductive type. The first electrode is disposed on the first surface. The second electrode is disposed on the second surface. The seed layer is disposed on the first surface. The nanorods are disposed on the seed layer. | 11-07-2013 |
20140127496 | CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm. | 05-08-2014 |
20140186631 | SEED USED FOR CRYSTALLINE SILICON INGOT CASTING - The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone. | 07-03-2014 |
20140220301 | EPITAXIAL SUBSTRATE HAVING NANO-RUGGED SURFACE AND FABRICATION THEREOF - The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production. | 08-07-2014 |