Patent application number | Description | Published |
20090210146 | METHOD AND SYSTEM FOR GENERATING AN ITINERARY - A method for generating an itinerary to be implemented by a system includes: enabling the system to determine a route that starts at a departure point and that ends at a destination point with reference to an electronic route-providing source; enabling the system to determine at least one candidate place-of-interest located in the vicinity of the route with reference to an electronic place-of-interest providing source; and enabling the system to generate an itinerary that departs from the departure point and that arrives at the destination point via the route. The system includes the candidate place-of-interest as a to-be-visited place-of-interest into the itinerary based on an estimated travel time associated with the route, a duration of stay associated with the to-be-visited place-of-interest already included in the itinerary, and a duration of stay associated with the candidate place-of-interest. A system that performs the method is also disclosed. | 08-20-2009 |
20110169112 | Composite Hardmask Architecture and Method of Creating Non-Uniform Current Path for Spin Torque Driven Magnetic Tunnel Junction - A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includes a pinned layer, a barrier layer, a free layer and a composite hardmask or top electrode. The composite hardmask/top electrode architecture is configured to provide a non-uniform current path through the MTJ storage element and is formed from electrodes having different resistance characteristics coupled in parallel. An optional tuning layer interposed between the free layer and the top electrode helps to reduce the damping constant of the free layer. | 07-14-2011 |
20120205764 | Methods of Integrated Shielding into MTJ Device for MRAM - Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via. | 08-16-2012 |
20130062715 | SYMMETRICALLY SWITCHABLE SPIN-TRANSFER-TORQUE MAGNETORESISTIVE DEVICE - A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry. At least one switching asymmetry balance layer (SABL) near the free layer of the MTJ reduces a first switching current Ic(p-ap) causing the value of the first switching current to be nearly equal to the value of a second switching current Ic(ap-p) without increasing the average switching current of the device. The SABL may be a non-magnetic switching asymmetry balance layer (NM-SABL) and/or a magnetic switching asymmetry balance layer (M-SABL). | 03-14-2013 |
20130191048 | METHOD AND DEVICE FOR ESTIMATING DAMAGE TO A MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT - A method of estimating damage to a magnetic tunnel junction (MTJ) element that includes providing an MTJ element having a magnetic barrier layer, the magnetic barrier layer having a periphery, a cross-sectional area and a thickness and comprising an inner region of undamaged magnetic barrier material and an outer region of damaged magnetic barrier material between the inner region and the periphery, determining a first value indicative of an electrical characteristic of the MTJ element, determining a second value indicative of the electrical characteristic that the MTJ element would have had if the outer region of damaged magnetic barrier material were not present and if the inner region of undamaged magnetic barrier material extended to the periphery, and calculating a value indicative of the size of the outer region of damaged magnetic barrier material from the first value and the second value. Also a computer configured to perform the method. | 07-25-2013 |
20140027869 | AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJs - A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization. | 01-30-2014 |
20140048894 | MTP MTJ DEVICE - Systems and methods for multiple-time programmable (MTP) devices. An MTP device includes a magnetic tunnel junction (MTJ) device programmable to a plurality of states based on voltage applied across the MTJ device. The plurality of states include a first resistance state corresponding to a first binary value stored in the MTJ device based on a first voltage, a second resistance state corresponding to a second binary value stored in the MTJ device based on a second voltage, a third resistance state corresponding to a breakdown of a barrier layer of the MTJ device based on a third voltage, and a fourth resistance state corresponding to an open fuse based on a fourth voltage. | 02-20-2014 |
20140073064 | MAGNETIC TUNNEL JUNCTION (MTJ) ON PLANARIZED ELECTRODE - A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ. | 03-13-2014 |
20140203381 | PROCESS AND APPARATUS FOR TRANSFORMING NITRIDATION/OXIDATION AT EDGES, AND PROTECTING EDGES OF MAGNETORESISTIVE TUNNEL JUNCTION (MTJ) LAYERS - Material surrounding a magnetic tunnel junction (MTJ) device region of a multi-layer starting structure is etched, forming an MTJ device pillar having an MTJ layer with a chemically damaged peripheral edge region. De-nitridation or de-oxidation, or both, restore the chemically damaged peripheral region to form an edge-restored MTJ layer. An MTJ edge restoration assist layer is formed on the edge-restored MTJ layer. An MTJ-edge-protect layer is formed on the insulating MTJ-edge-restoration-assist layer. | 07-24-2014 |
20150279479 | ANTI-FUSE ONE-TIME PROGRAMMABLE RESISTIVE RANDOM ACCESS MEMORIES - An anti-fuse device includes a first electrode, an insulator on the first electrode, a second electrode on the insulator, and selector logic coupled to the second electrode. The device also includes a conductive path between the first and second electrodes. The conductive path may be configured to provide a hard breakdown for one-time programmable non-volatile data storage. | 10-01-2015 |
20150280112 | MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING A MAGNETIC TUNNEL JUNCTION - An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode. | 10-01-2015 |
20150287910 | REPLACEMENT CONDUCTIVE HARD MASK FOR MULTI-STEP MAGNETIC TUNNEL JUNCTION (MTJ) ETCH - A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask. | 10-08-2015 |
20150303373 | SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT FORMED FROM FERRIMAGNETIC RARE-EARTH-TRANSITION-METAL (RE-TM) ALLOYS - A magnetic tunnel junction (MTJ) includes a free layer formed from a ferrimagnetic rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy. The MTJ further includes a pinned layer formed from a rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy, the pinned layer comprising one or more amorphous thin insertion layers such that a net magnetic moment of the free layer and the pinned layer is low or close to zero. | 10-22-2015 |
20150311429 | MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING A MAGNETIC TUNNEL JUNCTION - An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode. | 10-29-2015 |
Patent application number | Description | Published |
20090032891 | STRUCTURE OF MAGNETIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF - A structure of magnetic random access memory includes a magnetic memory cell formed on a substrate. An insulating layer covers over the substrate and the magnetic memory cell. A write current line is in the insulating layer and above the magnetic memory cell. A magnetic cladding layer surrounds the periphery of the write current line. The magnetic cladding layer includes a first region surrounding the top of the write current line, and a second region surrounding the side edge of the write current line, and extending towards the magnetic memory cell and exceed by a distance. | 02-05-2009 |
20090147567 | MAGNETIC MEMORY CELL STRUCTURE WITH THERMAL ASSISTANT AND MAGNETIC DYNAMIC RANDOM ACCESS MEMORY - A magnetic memory cell structure with thermal assistant includes a magnetic pinned layer, a barrier layer, a magnetic free layer, a perpendicular magnetic layer, and a heating layer sequentially stacked. The magnetic free layer has a longitudinal magnetization. The perpendicular magnetic layer has a perpendicular magnetization at a first temperature and is perpendicularly coupling to the longitudinal magnetization of the magnetic free layer. The perpendicular magnetic layer is in a paramagnetic state at a second temperature. The present invention further includes magnetic dynamic random access memory. | 06-11-2009 |
20100109109 | MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING - A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled. | 05-06-2010 |
20110001203 | MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING - A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer. | 01-06-2011 |
Patent application number | Description | Published |
20100277100 | ELECTRONIC BALLAST WITH DIMMING CONTROL FROM POWER LINE SENSING - The present invention discloses an electronic ballast with dimming control from power line sensing for a fluorescent lamp, comprising: a line switching sensing circuit, used to generate a switching sensing signal by performing a voltage comparison operation on a DC voltage, and generate a reset signal according to the off time of the power line; a control voltage generator, used to generate a control voltage according to the count of said switching sensing signal; a voltage controlled oscillator, used to generate an oscillating signal according to the control voltage; and a non-overlapping driver, used to generate a high side driving signal and a low side driving signal according to the oscillating signal. | 11-04-2010 |
20100277101 | ELECTRONIC BALLAST WITH DIMMING CONTROL FROM POWER LINE SENSING - The present invention discloses an electronic ballast with dimming control from power line sensing for a fluorescent lamp, comprising: a line switching sensing circuit, used to generate a switching sensing signal by performing a voltage comparison operation on a DC voltage; an oscillating signal gating unit, used to gate an oscillating signal with a pulse signal to generate a gated oscillating signal, wherein the pulse width of the pulse signal is generated according to the switching sensing signal; and a non-overlapping driver, used to generate a high side driving signal and a low side driving signal according to the gated oscillating signal. | 11-04-2010 |
20100277102 | ELECTRONIC BALLAST WITH DIMMING CONTROL FROM POWER LINE SENSING - The present invention discloses an electronic ballast with dimming control from power line sensing for a fluorescent lamp, comprising: a line switching sensing circuit, used to generate a switching sensing signal by performing a voltage comparison operation on a DC voltage, and generate a reset signal according to the off time of the power line; a dimming voltage generator, used to generate a dimming voltage according to a count of the switching sensing signal; and a phase-controlled non-overlapping driver, used to generate a high side driving signal and a low side driving signal for delivering a lamp current according to the dimming voltage, wherein the dimming voltage is used to generate a phase, and the phase is used to generate the lamp current. | 11-04-2010 |
20110012536 | ELECTRONIC BALLAST WITH DIMMING CONTROL FROM POWER LINE SENSING - The present invention discloses an electronic ballast with dimming control from power line sensing for a fluorescent lamp, comprising: a control voltage generator, used to generate a control voltage according to a switching count of a power line; an oscillator, used to generate an oscillating signal, wherein the oscillating signal is of a fixed frequency and has a rising voltage portion and a falling voltage portion; and a comparator, used to generate a high side gating signal according to voltage comparison of the oscillating signal and the control voltage. | 01-20-2011 |
20110122535 | SECONDARY SIDE PROTECTION METHOD AND APPARATUS FOR A SWITCHING POWER CONVERTER - The present invention discloses a secondary side protection method for a switching power converter, used to turn off a secondary side switch according to a secondary side voltage signal, wherein the secondary side voltage signal has falling edges corresponding to the start instants of secondary side discharge periods, and rising edges corresponding to the end instants of the secondary side discharge periods, the method comprising the steps of: measuring the time interval between two adjacent the rising edges repeatedly to derive discharge end cycle times; and generating a first turn-off signal to turn off the secondary side switch when the relative difference of two successive the discharge end cycle times exceeds a predetermined percentage. The present invention also provides a secondary side protection apparatus according to the method. | 05-26-2011 |