Patent application number | Description | Published |
20090079034 | NON-POLAR III-V NITRIDE SEMICONDUCTOR AND GROWTH METHOD - A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nanocolumns compliant layer with an HVPE growth process is provided. The method uses a combination of dry and wet etching to create nanocolumns consisting of layers of non-polar III nitride material and other insulating materials or materials used to grow the non-polar III-V nitride materials. | 03-26-2009 |
20090079035 | NON-POLAR III-V NITRIDE MATERIAL AND PRODUCTION METHOD - A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nano-pores and nano-network compliant layer with an HVPE, MOCVD, and integrated HVPE/MOCVD growth process in a manner that minimum growth will occur in the nano-pores is provided. The method produces nano-networks made of the non-polar III-V nitride material and the substrate used to grow it where the network is continuous along the surface of the template, and where the nano-pores can be of any shape. | 03-26-2009 |
20090127567 | LED CHIP THERMAL MANAGEMENT AND FABRICATION METHODS - The present invention relates to a method of fabricating a high power light-emitting device using an electrolessly or electrolytically plated metal composite heat dissipation substrate having a high thermal conductivity and a thermal expansion coefficient matching with the device. | 05-21-2009 |
20090159907 | TEXTURED LIGHT EMITTING DIODES - A high fill factor textured light emitting diode structure comprises: a first textured cladding and contact layer ( | 06-25-2009 |
20090174038 | PRODUCTION OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIAL USING A NANOSTRUCTURE TEMPLATE - A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to form a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures. | 07-09-2009 |
20090243043 | GROWTH METHOD USING NANOSTRUCTURE COMPLIANT LAYERS AND HVPE FOR PRODUCING HIGH QUALITY COMPOUND SEMICONDUCTOR MATERIALS - A method utilizes HVPE to grow high quality flat and thick compound semiconductors ( | 10-01-2009 |
20100276665 | PRODUCTION OF SEMICONDUCTOR DEVICES - A method of producing a layered semiconductor device comprises the steps of: (a) providing a base comprising a plurality of semiconductor nano-structures, (b) growing a semiconductor material onto the nano-structures using an epitaxial 5 growth process, and (c) growing a layer of the semiconductor material using an epitaxial growth process. | 11-04-2010 |
20140183700 | HIGH QUALITY DEVICES GROWTH ON PIXELATED PATTERNED TEMPLATES - A method of producing a template material for growing semiconductor materials and/or devices, comprises the steps of: (a) providing a substrate with a dielectric layer on the substrate; and (b) forming a pixelated pattern on the dielectric layer, the pattern comprising a plurality of discrete groups of structures. | 07-03-2014 |