Patent application number | Description | Published |
20090296465 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device and a method of operating the same. The nonvolatile memory device includes a memory cell array including memory cells for storing data, a temperature sensor and a controller. The temperature sensor outputs a temperature detection signal according to ambient temperatures while changing one or more pieces of reference voltage information, which are previously stored, when data is programmed into the memory cell array. The controller performs a verify operation of the program using a fast verify method and decides the number of steps which are comprised in step-shaped verify voltage pulse of the fast verify method according to the temperature detection signal. | 12-03-2009 |
20090296484 | Apparatus for Generating A Voltage and Non-Volatile Memory Device Having the Same - An apparatus for generating a voltage includes a first voltage outputting circuit configured to receive an input voltage and adjust and output a first voltage in accordance with a temperature, a buffer circuit configured to receive the first voltage and output the received first voltage as a second voltage at an output node of the buffer circuit, and a second voltage outputting circuit configured to receive the second voltage at an input terminal and output a third voltage by dividing a driving voltage in accordance with a resistance ratio, wherein the second voltage outputting circuit includes a sub-voltage outputting circuit and a controlling circuit configured to adjust a voltage level of the third voltage through a feedback of the third voltage to the input terminal. | 12-03-2009 |
20100182840 | Nonvolatile Memory Device and Program or Verification Method Using the Same - A nonvolatile memory device includes a bit line sensing signal supply unit configured to output a bit line sensing signal, having a rising voltage level that rises in discrete steps, in response to a control signal, and a bit line sensing unit configured to selectively connect a bit line and a sensing node in response to the bit line sensing signal. | 07-22-2010 |
20100301819 | HIGH VOLTAGE GENERATING APPARATUS - A high voltage generating apparatus includes a regulator configured to control a pumping voltage at a voltage of a certain level, and an amplifier configured to amplify a current flowing through an output terminal of the regulator and to output an amplified current. | 12-02-2010 |
20100301830 | SEMICONDUCTOR DEVICE INCLUDING VOLTAGE GENERATOR - A semiconductor device includes a voltage generator. The voltage generator includes a detection circuit having a number of voltage detection units, each detection unit including a different number of resistors compared to other detection units and each detection unit outputting a respective voltage, a voltage comparison circuit configured to compare a constant voltage to each respective divided voltage outputted from detection units of the detection circuit and to output a number of control signals in response to the comparison, and a reference voltage generator configured to generate a reference voltage in response to the control signals. | 12-02-2010 |
20100302853 | NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - A nonvolatile memory device includes a high voltage generation unit configured to generate a program voltage and a pass voltage, a block selection unit coupled to the high voltage generation unit through global word lines, a memory cell array coupled to the block selection unit through word lines, a discharge unit coupled to the global word lines and configured to change a level of voltage supplied to the global word lines, and a discharge control unit configured to generate a discharge signal, and transfer the discharge signal to the discharge unit in response to the program voltage. | 12-02-2010 |
20100302865 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device comprises a memory cell array comprising memory cells, an operation voltage generation unit configured to generate a first pass voltage when a verification voltage for a memory cell to be programmed is higher than a reference voltage and to generate a second pass voltage lower than the first pass voltage when the verification voltage for the memory cell to be programmed is lower than the reference voltage, a high voltage switch unit configured to transfer the first or second pass voltage to global word lines other than a selected global word line and to transfer the verification voltage to the selected global word line of the global word lines, and a block selection unit coupled between the global word lines and word lines and configured to transfer the verification voltage and the first or second pass voltage to the word lines. | 12-02-2010 |
20110170360 | METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device comprises a bit line voltage set-up step of receiving a program command and data to be programmed and setting up a voltage of a selected bit line according to a state of program data; a program step of supplying a program voltage to a word line selected for a program in response to a control signal for setting up the program voltage, supplying a first pass voltage to unselected word lines, and then performing the program; and a program verification step of, in response to a control signal which is subsequent to the control signal for setting up the program voltage and is used to set a verification voltage, performing a program verification operation by supplying the verification voltage to the selected word line. | 07-14-2011 |
20120014182 | APPARATUS FOR GENERATING A VOLTAGE AND NON-VOLATILE MEMORY DEVICE HAVING THE SAME - An apparatus for generating a voltage includes a first voltage outputting circuit configured to receive an input voltage and adjust and output a first voltage in accordance with a temperature, a buffer circuit configured to receive the first voltage and output the received first voltage as a second voltage at an output node of the buffer circuit, and a second voltage outputting circuit configured to receive the second voltage at an input terminal and output a third voltage by dividing a driving voltage in accordance with a resistance ratio, wherein the second voltage outputting circuit includes a sub-voltage outputting circuit and a controlling circuit configured to adjust a voltage level of the third voltage through a feedback of the third voltage to the input terminal. | 01-19-2012 |
Patent application number | Description | Published |
20100008138 | METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE - According to an aspect of a method of programming a nonvolatile memory device, a first program operation command is input, and a program operation is executed according to a program start voltage stored in a program start voltage storage unit. Here, a program voltage, which is applied at a time point at which a memory cell programmed higher than a verify voltage while the program operation is performed occurs for the first time, is updated to a program start voltage. | 01-14-2010 |
20100008145 | METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE - A method of programming nonvolatile memory devices. According to one programming method program operation is performed by applying a dummy program pulse having a pulse width wider than a pulse width of a program start pulse. A program operation is performed by applying the program start pulse. It is then verified whether a program has been completed as a result of the program operation. According to another programming method, a program operation is performed by applying a step-shaped dummy program pulse, which has a second pulse width and has been increased by a second step voltage. A program operation is performed by applying a program pulse having a first step voltage and a first pulse width. It is then verified whether a program has been completed as a result of the program operation. | 01-14-2010 |
20100302830 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device having a number of chips, each of the chips including a chip enable detection unit configured to simultaneously output a first signal and a second signal in response to a chip enable signal, a chip operation detection unit configured to output an operation state signal in response to the first signal, and an internal circuit configured to operate in response to a power source voltage and a control signal in response to the second signal being received. | 12-02-2010 |
20100302891 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME - A semiconductor device includes a power-up operation unit configured to perform a power-up operation in response to a power-up enable signal and to output a powered-up control signal, and configured to output a power-up completion signal after the power-up operation is completed, an internal circuit configured to operate in response to the powered-up control signal, and a power-up detection unit configured to output a power-up flag signal in response to the power-up completion signal. | 12-02-2010 |
20120044761 | NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - A method of 4-bit MLC programming a nonvolatile memory device includes inputting an m | 02-23-2012 |