Patent application number | Description | Published |
20140094027 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure. | 04-03-2014 |
20140179122 | METHOD OF DEPOSITING A FILM - A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion. | 06-26-2014 |
20140290578 | FILM DEPOSITION APPARATUS - In discharging a source gas from a first process gas nozzle, rectifying members including a coolant flow passage provided in a concertinaing manner therein are arranged both sides of the first process gas nozzle. Then, a coolant at a temperature higher than a liquefaction temperature of the source gas and lower than a thermal decomposition temperature of the source gas is flown through the coolant flow passage, by which the first process gas nozzle is cooled through the rectifying member. | 10-02-2014 |
20150031204 | METHOD OF DEPOSITING FILM - A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber. | 01-29-2015 |
Patent application number | Description | Published |
20130200491 | METHOD OF MANUFACTURING CAPACITOR, CAPACITOR AND METHOD OF FORMING DIELECTRIC FILM FOR USE IN CAPACITOR - Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO | 08-08-2013 |
20130205611 | GAS SUPPLY APPARATUS AND HEAT TREATMENT APPARATUS - Provided is a gas supply apparatus having a source gas supply system configured to supply a source gas to a processing container using a carrier gas, wherein the source gas is generated from a liquid raw material consisting of an organic metal material. The gas supply apparatus includes a raw material storage tank configured to store the liquid raw material therein; a gas supply portion installed to the raw material storage tank and connected to a carrier gas passage, wherein the carrier gas passage allows the carrier gas to flow; a gas outflow portion installed to the raw material storage tank and connected to a source gas passage, wherein the source gas passage allows the source gas to flow; and a baffle plate configured to prevent the carrier gas injected from the gas supply portion from being brought into direct contact with a liquid surface of the raw material. | 08-15-2013 |
20130340678 | GAS SUPPLY APPARATUS AND FILM FORMING APPARATUS - Provided is a gas supply apparatus which includes a raw material gas supply system for supplying a raw material gas into a processing container, a tank to store a liquid raw material, a main heating unit for heating the bottom and sides of the tank, a ceiling heating unit for heating a ceiling portion of the tank, a main temperature measurement unit for measuring a temperature of a region of the main heating unit, a ceiling temperature measurement unit for measuring a temperature of the ceiling heating unit, a liquid phase temperature measurement unit for measuring a temperature of the liquid raw material, a vapor phase temperature measurement unit for measuring a temperature of a vapor phase portion in the upper part of the tank, a level measurement unit for measuring a liquid level of the liquid raw material, and a temperature control unit for controlling the heating units. | 12-26-2013 |
20140087564 | PLASAMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to place a substrate thereon, a purge gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed. | 03-27-2014 |
20140126980 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus which includes: first and second vacuum transfer chambers which are partitioned from each other; processing chambers configured to perform a vacuum processing onto substrates; a load lock chamber installed to be sandwiched between the first and second vacuum transfer chambers, and including partition valves installed between the load lock chamber and a normal pressure atmosphere, and between the load lock chamber and each of the first and second vacuum transfer chambers; and substrate mounting tables inside the load lock chamber and configured to move between an upper position at which the substrates are transferred between the load lock chamber and the normal pressure atmosphere, and a lower position at which the substrates are transferred between the load lock chamber and the first or second vacuum transfer chamber. | 05-08-2014 |
20150017813 | Semiconductor Device Manufacturing Method and Substrate Treatment System - A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more. | 01-15-2015 |