Patent application number | Description | Published |
20110133314 | METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method for producing a semiconductor wafer includes pulling a single crystal of semiconductor material, slicing a semiconductor wafer from the single crystal and polishing the semiconductor wafer with the polishing pad and polishing agent. The polishing agent is free of solid materials having abrasive action and the polishing pad contains fixedly bonded solid materials with abrasive action. During polishing the polishing agent is supplied in a gap between the semiconductor wafer and polishing pad. The polishing agent has a pH value in a range of 9.5 to 12.5. | 06-09-2011 |
20110316128 | Semiconductor Wafers Of Silicon and Method For Their Production - Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method. | 12-29-2011 |
20120058040 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor. | 03-08-2012 |
20120060562 | METHOD FOR PRODUCING THIN SILICON RODS - The invention relates to a method for producing thin silicon rods ( | 03-15-2012 |
20120193214 | PROCESS FOR PURIFYING CHLOROSILANES BY DISTILLATION - The invention relates to a process for purifying chlorosilanes by distillation, which includes providing a boron-containing mixture of chlorosilanes containing TCS, DCS and STC and purifying the mixture of chlorosilanes by distillation in a plurality of distillation columns, wherein low-boiling boron compounds are branched off from the distillation columns by means of overhead streams containing boron-enriched DCS and high-boiling boron compounds are branched off by means of a boron-enriched bottom stream containing high boilers. | 08-02-2012 |
20130011558 | PROCESS FOR PRODUCING POLYSILICON - A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl | 01-10-2013 |
20140105804 | REACTOR AND PROCESS FOR ENDOTHERMIC GAS PHASE REACTION IN A REACTOR - The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500° C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process. | 04-17-2014 |
20140105805 | PROCESS FOR HYDROGENATING SILICON TETRACHLORIDE TO TRICHLOROSILANE - The invention provides a process for hydrogenating silicon tetrachloride in a reactor, in which reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature of greater than 900° C. at a pressure between 4 and 15 bar, first by means of at least one heat exchanger made from graphite and then by means of at least one heating element made from SiC-coated graphite, the temperature of the heating elements being between 1150° C. and 1250° C., wherein the reactant gas includes at least one boron compound selected from the group consisting of diborane, higher boranes, boron-halogen compounds and boron-silyl compounds, the sum of the concentrations of all boron compounds being greater than 1 ppmv based on the reactant gas stream. | 04-17-2014 |