Waidmann
Alex Waidmann, Heuchlingen DE
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20150274123 | SEAT BELT TENSIONER FOR A VEHICLE PASSENGER RESTRAINT SYSTEM - A belt tensioner ( | 10-01-2015 |
Alexander Waidmann, Schwäebisch Gmüend DE
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20160114762 | BELT TENSIONER - The invention provides in a best tensioner ( | 04-28-2016 |
Andrea Waidmann, Hamburg DE
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20130117161 | METHOD FOR SELECTING AND PROVIDING CONTENT OF INTEREST - A method is disclosed. The method includes detecting the contact area of a user's finger or a marking element marking a region of a touch-sensitive display, and recording a cumulative area contacted by the user's finger or the marking element during one marking motion. The cumulative area can be the selected content of interest. | 05-09-2013 |
Christopher R. Waidmann, Los Alamos, NM US
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20150057457 | HYDROGENATION OF BIOMASS-DERIVED SUBSTRATES - The α,β-unsaturated ketone moiety of a substrate representative of non-food based biomass was hydrogenated to the corresponding saturated alcohol moiety using a composition including (1) a copper salt; (2) a phosphine; (3) a polar aprotic solvent such as acetonitrile, and (4) a compound suitable for providing hydrogen for the hydrogenation, such as a suitable silane material or a suitable siloxane material. | 02-26-2015 |
Dieter Waidmann, Heuchlingen DE
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20140352390 | DEVICE AND METHOD FOR MACHINING A WORKPIECE CONSISTING OF METAL, PARTICULARLY FOR PRODUCING A CUP-SHAPED COMPONENT FOR THE AUTOMOBILE INDUSTRY, AS WELL AS SUCH A WORKPIECE - The invention relates to an apparatus, an installation and a method for machining a workpiece made of metal, such as steel, by a machining processes such as forming, pressing, drawing, compressing and cutting. The invention includes at least two tools and a drive associated with the tools for their movement and for carrying out the machining process. The drives are arranged in such a way that when travelling on trajectories the tools have different speeds over at least a part of their trajectories. | 12-04-2014 |
Luke Christopher Waidmann, Alexandria, VA US
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20140240097 | Methods and Apparatus For Ceiling-Mounted RFID-Enabled Tracking - Systems and methods for tracking a subject using radio-frequency identification (RFID). In an embodiment, an antenna array comprising a plurality of articulating brackets and a plurality of antennas is provided. Each of the articulating brackets is configured to move one of the plurality of antennas into a plurality of positions, and each of the antennas is configured to receive a RFID signal. In addition, a processor receives RFID data based on RFID signals received by the antennas of the antenna array, and determines a trajectory of a subject based on the RFID data. Based on the determined trajectory of the subject, the processor controls one or more of the articulating brackets to move one or more of the antennas into a position to track the subject. | 08-28-2014 |
Stephan Waidmann, Wappingers Falls, NY US
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20110062519 | FABRICATION OF SEMICONDUCTORS WITH HIGH-K/METAL GATE ELECTRODES - Semiconductor devices with high-K/metal gates are formed with spacers that are substantially resistant to subsequent etching to remove an overlying spacer, thereby avoiding replacement and increasing manufacturing throughput. Embodiments include forming a high-K/metal gate, having an upper surface and side surfaces, over a substrate, e.g., a SOI substrate, and sequentially forming, on the side surfaces of the high-K/metal gate, a first spacer of a non-oxide material, a second spacer, of a material different from that of the first spacer, and a third spacer, of a material different from that of the second spacer. After formation of source and drain regions, e.g., epitaxially grown silicon-germanium, the third spacer is etched with an etchant, such as hot phosphoric acid, to which the second spacer is substantially resistant, thereby avoiding replacement. | 03-17-2011 |
20120112281 | FABRICATION OF SEMICONDUCTORS WITH HIGH-K/METAL GATE ELECTRODES - Semiconductor devices with high-K/metal gates are formed with spacers that are substantially resistant to subsequent etching to remove an overlying spacer, thereby avoiding replacement and increasing manufacturing throughput. Embodiments include forming a high-K/metal gate, having an upper surface and side surfaces, over a substrate, e.g., a SOI substrate, and sequentially forming, on the side surfaces of the high-K/metal gate, a first spacer of a non-oxide material, a second spacer, of a material different from that of the first spacer, and a third spacer, of a material different from that of the second spacer. After formation of source and drain regions, e.g., epitaxially grown silicon-germanium, the third spacer is etched with an etchant, such as hot phosphoric acid, to which the second spacer is substantially resistant, thereby avoiding replacement. | 05-10-2012 |
Stephan Waidmann, Laichingen DE
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20140028529 | VARIABLE ADAPTION OF ACTIVE ANTENNA SYSTEM RADIO FREQUENCY SIGNAL FILTERING - Antenna systems, such as an active antenna system (AAS), can include active and passive electronic components located closely together inside an antenna system. Such systems may benefit from variable adaptation of active antenna system radio frequency signal filtering. An apparatus can include an active part on a first end of a signal path within a sealed enclosure. The apparatus can also include a radiator part on a second end of the signal path within the sealed enclosure. The apparatus can further include an intermediate part, which includes at least one of an additional filter part or a customized passive part, positioned between the active part and the radiator part along the signal path between the first signal side and the second signal side. | 01-30-2014 |
Stephan Waidmann, Dresden DE
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20110266638 | Semiconductor Device Comprising Contact Elements and Metal Silicide Regions Formed in a Common Process Sequence - A metal silicide in sophisticated semiconductor devices may be provided in a late manufacturing stage on the basis of contact openings, wherein the deposition of the contact material, such as tungsten, may be efficiently combined with the silicidation process. In this case, the thermally activated deposition process may initiate the formation of a metal silicide in highly doped semiconductor regions. | 11-03-2011 |