Patent application number | Description | Published |
20090130794 | THERMAL EVAPORATION APPARATUS, USE AND METHOD OF DEPOSITING A MATERIAL - Thermal evaporation apparatus for depositing of a material on a substrate, comprising material storage means; heating means to generate a vapour of the material in the material storage means; vapour outlet means comprising a vapour receiving pipe having vapour outlet passages, and emission reducing means arranged such that an external surface of the vapour outlet means directed to said substrate exhibits low emission, and wherein the apparatus further comprises pipe heating means in the interior of said vapour outlet means, wherein at least the surfaces of the material storage means, heating means, and emission reducing means and pipe heating means arranged to come into contact with the material vapour are of a corrosion-resistant material. Further a thermal evaporation apparatus for depositing a material on a substrate comprising a vapour outlet means arranged to receive in its interior the vapour of the material heated in a material storage means and having vapour outlet passages, wherein said vapour outlet means basically consist of a corrosion-resistant material and are gastight to such an extent that sufficient dynamic pressure of said material vapour is achievable for homogenous deposition of said material on said substrate. Also the use of the apparatus, and a method of depositing a material onto a substrate by thermal evaporation. | 05-21-2009 |
20110183461 | PROCESS DEVICE FOR PROCESSING IN PARTICULAR STACKED PROESSED GOODS - The invention relates to a processing device for the processing of in particular stacked proceed goods, particularly in the form of planar substrates for the production of thin layers, particularly of conducting, semiconducting, or insulating thin layers, comprising an evacuatable processing chamber for receiving a process gas, comprising at least one tempering device, particularly at least in sections in and/or in thermal operative connection with at least one wall, particularly all walls of the processing chamber, said chamber being equipped and suited to keep at least a partial region of the wall, particularly substantially the entire process chamber wall, of the process chamber at a predetermined temperature, particularly to keep the same at a first temperature during at least part of the processing of the stacked processed goods, said temperature not being below room temperature as the second temperature, and being below a third temperature which can be generated in the processing chamber and is above room temperature; at least one gas conveying device for creating a gas flow cycle in the process chamber, particularly a forced convection; at least one heating device for heating the gas, said heating device disposed or able to be disposed in the gas flow cycle created by the gas conveying device; at least one gas guiding device, | 07-28-2011 |
20120015476 | METHOD FOR PRODUCING SEMICONDUCTOR LAYERS AND COATED SUBSTRATES TREATED WITH ELEMENTAL SELENIUM AND/OR SULFER, IN PARTICULAR FLAT SUBSTRATES - The invention relates to a method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur, in particular flat substrates, containing at least one conducting, semiconducting and/or insulating layer, in which a substrate which is provided with at least one metal layer and/or with at least one layer containing metal, in particular a stack of substrates, each of which is provided with at least one metal layer and/or with at least one layer which contains metal, is inserted into a processing chamber and heated to a predetermined substrate temperature; elementary selenium and/or sulphur vapor is guided past on the or on every metal layer and/or layer containing metal, from a source located inside and/or outside the processing chamber, in particular by means of a carrier gas which is in particular inert, under rough vacuum conditions or ambient pressure conditions or overpressure conditions, in order to react chemically with said layer with selenium or sulphur in a targeted manner; the substrate is heated by means of forced convection by at least one gas conveying device and/or the elementary selenium and/or sulphur vapor is mixed and guided past on the substrate by means of forced convection by at least one gas conveying device in the processing chamber, in particular in a homogeneous manner. The invention furthermore relates to a processing device for implementing a method of this type. | 01-19-2012 |
20120298194 | METHOD FOR PRODUCING A SUBSTRATE HAVING A COLORED INTERFERENCE FILTER LAYER, THIS SUBSTRATE CONTAINING A COLORED INTERFERENCE FILTER LAYER, THE USE OF THIS SUBSTRATE AS A COLORED SOLAR CELL OR AS A COLORED SOLAR MODULE OR AS A COMPONENT THEREOF, AS WELL AS AN ARRAY INCLUDING AT LEAST TWO OF THESE SUBSTRATES - A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or polycrystalline metal oxides with the aid of physical or chemical vapor deposition using a coating system, in particular with the aid of a sputtering gas, in which at least two, in particular at least six, coating layers are vapor deposited one on top of the other forming polycrystalline metal oxides in each case. | 11-29-2012 |
20140345529 | Method for Producing Semiconductor Layers and Coated Substrates Treated with Elemental Selenium and/or Sulphur, in Particular, Flat Substrates - A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and/or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and/or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor is located inside the processing chamber. The elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device. | 11-27-2014 |
20150068578 | method for manufacturing thin-film solar modules, and thin-film solar modules which are obtainable according to this method - A method for manufacturing photovoltaic thin-film solar modules, including: applying a back electrode layer to a substrate, applying at least one conductive barrier layer, applying at least one contact layer, applying at least one kesterite or chalcopyrite semiconductor absorber layer, applying at least one buffer layer, removing the applied layers with laser treatment with formation of first separating trenches, filling the first separating trenches using at least one insulating material, removing layers extending from the barrier layer in the direction of the semiconductor absorber layer with formation of second separating trenches, or chemical phase transformation or thermal decomposition of layers extending from the barrier layer in the direction of the semiconductor absorber layer with the formation of first linear conductive areas, applying at least one transparent front electrode layer with filling and contacting of the second separating trenches or with contacting of the first linear conductive areas, so that adjacent solar cells are series connected, and removing the layers extending from the barrier layer in the direction of the front electrode layer with formation of third separating trenches. Described are such modules obtained by the method. | 03-12-2015 |
20150068579 | Multilayer back electrode for a photovoltaic thin-film solar cell, use thereof for manufacturing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the multilayer back electrode and a manufacturing method - A multilayer back electrode for a photovoltaic thin-film solar cell includes, in the following sequence: at least one bulk back electrode layer containing at least one of V, Mn, Cr, Mo, Co, Zr, Ta, Nb, and W; at least one conductive barrier layer; and at least one ohmic contact layer containing (i) at least one first ply adjacent to the at least one conductive barrier layer, the at least one first ply containing at least one of Mo, W, Ta, Nb, Zr and Co, and (ii) at least one second ply not adjacent to the at least one barrier layer, the at least one second ply containing at least one metal chalcogenide. | 03-12-2015 |
20150068580 | PHOTOVOLTAIC THIN-FILM SOLAR MODULES AND METHOD FOR MANUFACTURING SUCH THIN-FILM SOLAR MODULES - A photovoltaic thin-film solar module includes in the following sequence: a substrate layer; a back electrode layer directly adjoining the substrate layer; a conductive barrier layer directly adjoining at least one of the back electrode layer and the substrate layer; an ohmic contact layer directly adjoining the barrier layer; one of a chalcopyrite or kesterite semiconductor absorber layer directly adjoining the contact layer; a first buffer layer directly adjoining the semiconductor absorber layer and containing one of Zn(S,OH) or In | 03-12-2015 |