Patent application number | Description | Published |
20080237718 | METHODS OF FORMING HIGHLY ORIENTED DIAMOND FILMS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a first HOD layer on a first side of a first silicon substrate, forming a CMOS region on a second side of the silicon substrate, forming amorphous silicon on the CMOS region, recrystallizing the amorphous silicon to form a first single crystal silicon layer, and forming a second HOD layer on the first single crystal silicon layer. | 10-02-2008 |
20080237844 | Microelectronic package and method of manufacturing same - A microelectronic package includes a package substrate ( | 10-02-2008 |
20090242247 | Package substrate and die spacer layers having a ceramic backbone - A layer or layers for use in package substrates and die spacers are described. The layer or layers include a plurality of ceramic wells lying within a plane and separated by metallic vias. Recesses within the ceramic wells are occupied by a dielectric filler material. | 10-01-2009 |
20090324859 | DENSE, SHAPED ARTICLES CONSTRUCTED OF A REFRACTORY MATERIAL AND METHODS OF PREPARING SUCH ARTICLES - The invention provides a method of forming a dense, shaped article, such as a crucible, formed of a refractory material, the method comprising the steps of placing a refractory material having a melting point of at least about 2900° C. in a mold configured to form the powder into an approximation of the desired shape. The mold containing the powder is treated at a temperature and pressure sufficient to form a shape-sustaining molded powder that conforms to the shape of the mold, wherein the treating step involves sintering or isostatic pressing. The shape-sustaining molded powder can be machined into the final desired shape and then sintered at a temperature and for a time sufficient to produce a dense, shaped article having a density of greater than about 90% and very low open porosity. Preferred refractory materials include tantalum carbide and niobium carbide. | 12-31-2009 |
20120152601 | Package substrate and die spacer layers having a ceramic backbone - A layer or layers for use in package substrates and die spacers are described. The layer or layers include a plurality of ceramic wells lying within a plane and separated by metallic vias. Recesses within the ceramic wells are occupied by a dielectric filler material. | 06-21-2012 |
20120193734 | STRESS SENSOR FOR IN-SITU MEASUREMENT OF PACKAGE-INDUCED STRESS IN SEMICONDUCTOR DEVICES - A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed. | 08-02-2012 |
20130341076 | Package substrate and die spacer layers having a ceramic backbone - A layer or layers for use in package substrates and die spacers are described. The layer or layers include a plurality of ceramic wells lying within a plane and separated by metallic vias. Recesses within the ceramic wells are occupied by a dielectric filler material. | 12-26-2013 |
20140013855 | DEFLECTION SENSOR FOR IN-SITU DEFLECTION MEASUREMENT IN SEMICONDUCTOR DEVICES - A deflection sensor is disclosed herein. The deflection sensor includes a nanotube film adjacent to a substrate, and first and second contacts electrically connectable with the nanotube film. Methods of making and using the deflection sensor are also disclosed. | 01-16-2014 |