Patent application number | Description | Published |
20080212060 | Method for Determining Intensity Distribution in the Image Plane of a Projection Exposure Arrangement - A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution. | 09-04-2008 |
20080297754 | Microlithographic projection exposure apparatus - The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity. | 12-04-2008 |
20090115986 | Microlithography projection objective - Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives. | 05-07-2009 |
20100079739 | PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY - A projection objective for applications in microlithography, a microlithography projection exposure apparatus with a projection objective, a microlithographic manufacturing method for microstructured components, and a component manufactured using such a manufacturing method are disclosed. | 04-01-2010 |
20110038061 | CATADIOPTRIC PROJECTION OBJECTIVE - Catadioptric projection objective ( | 02-17-2011 |
20110222043 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity. | 09-15-2011 |
20120281196 | PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A projection lens of a projection exposure apparatus, for imaging a mask which can be positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane, includes a housing, in which at least one optical element is arranged, at least one partial housing which is arranged within said housing and which at least regionally surrounds light passing from the object plane as far as the image plane during the operation of the projection lens, and a reflective structure, which reduces a light proportion which reaches the image plane after reflection at the at least one partial housing, by comparison with an analogous arrangement without said reflective structure. | 11-08-2012 |
20120320348 | REFLECTIVE MASK FOR EUV LITHOGRAPHY - To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography having a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured such that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%. | 12-20-2012 |
20130242279 | CATADIOPTRIC PROJECTION OBJECTIVE - Catadioptric projection objective ( | 09-19-2013 |
20140293256 | MICROLITHOGRAPHY PROJECTION OBJECTIVE - Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives. | 10-02-2014 |
20140320955 | MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity. | 10-30-2014 |
20140333913 | MICROLITHOGRAPHY PROJECTION OBJECTIVE - Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives. | 11-13-2014 |
20150055212 | CATADIOPTRIC PROJECTION OBJECTIVE - Catadioptric projection objective ( | 02-26-2015 |