Patent application number | Description | Published |
20090047544 | Method of preparing pressureless sintered, highly dense boron carbide materials - In a method of preparing a boron carbide material, boron carbide powder is washed with essentially pure water at an elevated temperature to generate washed boron carbide powder. The washed boron carbide powder is combined with a sintering aid. The mixture of the boron carbide powder and the sintering aid is pressed to form a shaped material, and the shaped material is sintered. A sintered boron carbide material comprises a boron carbide component that includes boron carbide, elemental carbon, and not more than about 0.6 wt % of oxygen on the basis of the total weight of the boron carbide component. The sintered boron carbide material has a density of at least about 99% of the theoretical density. Another sintered boron carbide material comprises a boron carbide component that includes boron carbide, silicon carbide, elemental carbon, and not more than about 0.3 wt % oxygen on the basis of the total weight of the boron carbide component, and has a density of at least about 97% of the theoretical density. | 02-19-2009 |
20110160035 | METHOD OF PREPARING PRESSURELESS SINTERED, HIGHLY DENSE BORON CARBIDE MATERIALS - In a method of preparing a boron carbide material, boron carbide powder is washed with essentially pure water at an elevated temperature to generate washed boron carbide powder. The washed boron carbide powder is combined with a sintering aid. The mixture of the boron carbide powder and the sintering aid is pressed to form a shaped material, and the shaped material is sintered. A sintered boron carbide material comprises a boron carbide component that includes boron carbide, elemental carbon, and not more than about 0.6 wt % of oxygen on the basis of the total weight of the boron carbide component. The sintered boron carbide material has a density of at least about 99% of the theoretical density. Another sintered boron carbide material comprises a boron carbide component that includes boron carbide, silicon carbide, elemental carbon, and not more than about 0.3 wt % oxygen on the basis of the total weight of the boron carbide component, and has a density of at least about 97% of the theoretical density. | 06-30-2011 |
20110172080 | Dry and Wet Low Friction Silicon Carbide Seal - A porous sintered silicon carbide body that includes silicon carbide and graphite and methods of making thereof are described. The porous silicon carbide body can be a seal. The porous sintered silicon carbide body defines pores with an average pore size in a range of between about 20 μm and about 40 μm, comprising a porosity in a range of between about 1% and about 5% by volume. | 07-14-2011 |
20110175263 | GLASS ENCAPSULATED HOT ISOSTATIC PRESSED SILICON CARBIDE - A method of forming a silicon carbide sintered body includes mixing silicon carbide powder with a boron additive and carbon to form a green mixture and shaping the green mixture into a green body, and coating the green body with boron nitride. The method further includes glass encapsulating the green body and hot isostatic pressing the glass encapsulated green body at a temperature in a range of between about 1900° C. and about 2400° C. for a time period in a range of between about one hour and about three hours, to thereby form a silicon carbide sintered body having a density at least 97% of the theoretical density of silicon carbide. | 07-21-2011 |
20110175264 | High Toughness Ceramic Composites - A method of forming a sintered silicon carbide body includes mixing silicon carbide powder having an oxygen content of less than about 3 wt % and having a surface area in a range of between about 8 m | 07-21-2011 |
20110227259 | METHODS OF FORMING SINTERED BORON CARBIDE - A method of forming a sintered boron carbide body includes washing boron carbide powder with essentially pure water at an elevated temperature to generate low oxygen boron carbide powder, mixing a sintering aid and a pressing aid with the low oxygen boron carbide powder to form a green mixture, and shaping the green mixture into a green boron carbide body. The method can include mixing titanium carbide powder having an average particle diameter in a range of between about 5 nm and about 100 nm with the low oxygen boron carbide powder. The method can further include sintering the green boron carbide body, and hot isostatic pressing the sintered body, to a density greater than about 98.5% of the theoretical density (TD) of boron carbide. Alternatively, the method can include sintering the shaped boron carbide green body at a temperature greater than about 2,200° C., to thereby form a eutectic liquid solid solution of B | 09-22-2011 |
20120208690 | CRUCIBLE BODY AND METHOD OF FORMING SAME - An article including a monolithic crucible body comprising silicon oxynitride (Si | 08-16-2012 |
20130000216 | ABRASIVE ARTICLES INCLUDING ABRASIVE PARTICLES OF SILICON NITRIDE - An abrasive article includes a body having abrasive particles contained within a bond material. The abrasive particles can include a majority content of silicon nitride and a minority content of sintering material including at least two rare-earth oxide materials. In an embodiment, the rare-earth oxide materials can include Nd | 01-03-2013 |
20130090228 | COMPOSITE BODY AND METHOD OF MAKING - A composite article having a body including a first phase that includes a nitride material, a second phase that includes a carbide material, and a third phase having one of an amorphous phase material with a nitrogen content of at least about 1.6 wt % or an amorphous phase material comprising carbon. | 04-11-2013 |
20140291898 | METHOD OF FORMING A POROUS SINTERED CERAMIC BODY - A porous sintered silicon carbide body that includes a ceramic and a solid lubricant and methods of making thereof are described. The porous silicon carbide body can be a seal. The porous sintered silicon carbide body defines pores that can have an average pore size in a range of between about 20 μm and about 40 μm, and a porosity in a range of between about 1% and about 6% by volume. | 10-02-2014 |
20140326403 | SELF-BONDING OF CHEMICALLY VAPOR DEPOSITED SiC ARTICLES - Method and system for bonding two or more CVD SiC articles together without the use of interface materials using applied forces from about 0.0035 MPa to about 0.035 MPa. The articles are pretreated for bonding. Graphite or other fixtures are used to apply forces in a vacuum or inert gas environment. Temperatures from about 1900° C. to about 2200° C. are used to initiate a β→α transition in the SiC to create bonded CVS SiC articles. | 11-06-2014 |