Patent application number | Description | Published |
20080266502 | METHOD OF PRODUCING UV STABLE LIQUID CRYSTAL ALIGNMENT - In a liquid crystal display device, a method for creating desirable pretilt angle by means of topography of the substrates, such as a surface that is sloped with respect to the surface of the electrodes. In combination with a low pretilt but highly photo-stable alignment layer, which may be very resistant to high levels of ultraviolet radiation, a high pretilt and photo-stable alignment structure is generated, by essentially combining two incompatible technical approaches. The ever more stringent requirements for projection displays are met. The methods for producing such sloped surfaces and the considerations related to design of the sloped surfaces are disclosed. | 10-30-2008 |
20090242869 | SUPER LATTICE/QUANTUM WELL NANOWIRES - Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. | 10-01-2009 |
20100006972 | WAFER SCALE MEMBRANE FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE FABRICATION - An fabrication of three-dimensional integrated devices and three-dimensional integrated devices fabricated therefrom are described. A device side of a donor wafer is coated with a polymer film and exposure of a substrate side to an oxidizing plasma creates a continuous SiO | 01-14-2010 |
20120193680 | STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENSIONS - A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench. | 08-02-2012 |
20120193715 | STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENSIONS - A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench. | 08-02-2012 |
20120299145 | APPARATUS FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE FABRICATION INCLUDING WAFER SCALE MEMBRANE - Apparatus configured for the fabrication of three-dimensional integrated devices and three-dimensional integrated devices fabricated therefrom are described. A device side of a donor wafer is coated with a polymer film and exposure of a substrate side to an oxidizing plasma creates a continuous SiO | 11-29-2012 |
20120302040 | METHOD OF FABRICATION OF A THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE USING A WAFER SCALE MEMBRANE - Methods of fabrication of three-dimensional integrated devices and three-dimensional integrated devices fabricated therefrom are described. A device side of a donor wafer is coated with a polymer film and exposure of a substrate side to an oxidizing plasma creates a continuous SiO | 11-29-2012 |
20140077330 | THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE USING A WAFER SCALE MEMBRANE - A donor wafer containing integrated semiconductor device. The donor wafer has a donor wafer membrane portion that has a device layer and a buried insulating layer. The donor wafer membrane portion has a number of integrated semiconductor devices where each integrated semiconductor device within the plurality of semiconductor devices corresponds to a die formed on the donor wafer. The donor wafer membrane portion has a diameter of at least 200 mm. The donor wafer has a crystalline substrate that is substantially removed from an area of the donor wafer membrane portion such that the device layer and the buried insulating layer of the donor wafer membrane in the area is configured to conform to a pattern specific topology on an acceptor surface. The donor wafer further has a support structure attached to regions of the donor wafer that are outside of the donor wafer membrane portion. | 03-20-2014 |