Vestyck
Anthony R. Vestyck, Plains, PA US
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20090204921 | System and Method for Organizing, Managing, and Using Electronic Files - A system for organizing information resources electronically, preferably in the context of a lesson plan is disclosed. The system also provides a simple, clean, easy-to-use interface that creates a dynamic structure for storing document and other information files and for presenting the user with an easy method to retrieve and use the files. A preferred embodiment of the system according to the present invention allows teachers to visually assess the quality of their lesson plan(s) as created and utilized, to apply templates to standardize the teaching of students across multiple educators, and to provide reports on demand that provide details on the effectiveness and comprehensiveness of their lesson plans. At the same time, the system is flexible enough to allow educators to customize their lessons to meet individual students' needs. | 08-13-2009 |
Daneil J. Vestyck, Wilkes Barre, PA US
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20100209596 | SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL - A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10 | 08-19-2010 |
Daniel J Vestyck, Allentown, PA US
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20130153045 | PROCESS CHAMBER PRESSURE CONTROL SYSTEM AND METHOD - A method of and apparatus for controlling pressure in a process chamber having a continuous gas inlet flow and a continuous gas outlet flow comprising providing a pulsed valve at a gas outlet, a pressure gauge, and a programmable controller and varying the pulse rate of the pulsed valve, wherein either the open time or closed time, or both open and closed times, is lengthened or shortened, depending on whether the gauge pressure is above or below the programmed setpoint. | 06-20-2013 |
20130334628 | PROCESS FOR MANUFACTURING ELECTRO-MECHANICAL SYSTEMS - A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure. | 12-19-2013 |
Daniel J. Vestyck, Wilkes Barre, PA US
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20110097478 | SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL - A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10 | 04-28-2011 |
20130324390 | SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL - A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 10 | 12-05-2013 |
Daniel J. Vestyck, Macungie, PA US
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20100230266 | Configurable Electrical Outlet Receptacle - There is disclosed an electrical receptacle for connecting to an electrical distribution scheme, specifically, an improved standard electrical receptacle where one or both sockets are configurable and are user-configurable to be either continuously powered or connected to a switched wiring loop. In one embodiment, there is disclosed an electrical receptacle comprising: at least one receiving terminal; and at least one integrated switch comprising a common pole and at least one switched pole, wherein the common pole is connected to the receiving terminal and the at least one switched pole is connected to a current carrying or positive “hot” wire. | 09-16-2010 |