Patent application number | Description | Published |
20140138030 | CAPACITIVELY COUPLED PLASMA EQUIPMENT WITH UNIFORM PLASMA DENSITY - Techniques disclosed herein include apparatus and processes for generating plasma having a uniform electron density across an electrode used to generate the plasma. An upper electrode of a capacitively coupled plasma system can include structural features configured to assist in generating the uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately rectangular cross section, and protruding from the surface of the upper electrode. Such structural features can also include nested elongated protrusions having a cross-sectional size and shape, with spacing of the protrusions selected to result in a system that generates uniform density plasma. A dielectric member or sheet can be positioned on the structural features to prevent or inhibit erosion from plasma while still maintaining plasma uniformity. | 05-22-2014 |
20140262041 | Microwave Surface-Wave Plasma Device - A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources. | 09-18-2014 |
20140262042 | Microwave Surface-Wave Plasma Device - A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources. | 09-18-2014 |
20140302666 | PULSED GAS PLASMA DOPING METHOD AND APPARATUS - A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process. | 10-09-2014 |
Patent application number | Description | Published |
20080211102 | LATERALLY GROWN NANOTUBES AND METHOD OF FORMATION - A semiconductor device has lateral conductors or traces that are formed of nanotubes such as carbon. A sacrificial layer is formed overlying the substrate. A dielectric layer is formed overlying the sacrificial layer. A lateral opening is formed by removing a portion of the dielectric layer and the sacrificial layer which is located between two columns of metallic catalysts. The lateral opening includes a neck portion and a cavity portion which is used as a constrained space to grow a nanotube. A plasma is used to apply electric charge that forms an electric field which controls the direction of formation of the nanotubes. Nanotubes from each column of metallic catalyst are laterally grown and either abut or merge into one nanotube. Contact to the nanotube may be made from either the neck portion or the columns of metallic catalysts. | 09-04-2008 |
20090142934 | METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING NANOTUBE STRUCTURES - A semiconductor device having upright dielectric nanotubes at an inter-layer dielectric level and method of manufacturing such a device is disclosed. The use of a catalyst is proposed in the disclosed manufacturing flow that facilitates growth of upright dielectric nanotubes having ultra low-k values that form all or part of the dielectric material for an ILD. In one embodiment, carbon nanotubes form interlayer conducting vias. In another embodiment dielectric material nanotubes form reinforcing pillars. The integration of catalysts is proposed to accommodate both upright dielectric and upright conducting nanotube fabrication in the same layer. | 06-04-2009 |
20090218212 | HOLLOW CATHODE DEVICE AND METHOD FOR USING THE DEVICE TO CONTROL THE UNIFORMITY OF A PLASMA PROCESS - A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate. | 09-03-2009 |
20090241310 | RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING - Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si | 10-01-2009 |
20090279226 | THIN-FILM CAPACITOR WITH A FIELD MODIFICATION LAYER - A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode. | 11-12-2009 |
20130081762 | Plasma Tuning Rods in Microwave Processing Systems - The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space. | 04-04-2013 |
20130082030 | Plasma Tuning Rods in Microwave Resonator Plasma Sources - The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber. | 04-04-2013 |
20130084706 | Plasma-Tuning Rods in Surface Wave Antenna (SWA) Sources - The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber. | 04-04-2013 |
20130119854 | RADIO FREQUENCY (RF) POWER COUPLING SYSTEM UTILIZING MULTIPLE RF POWER COUPLING ELEMENTS FOR CONTROL OF PLASMA PROPERTIES - A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase. | 05-16-2013 |
20130228284 | HOLLOW CATHODE DEVICE AND METHOD FOR USING THE DEVICE TO CONTROL THE UNIFORMITY OF A PLASMA PROCESS - A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate. | 09-05-2013 |
Patent application number | Description | Published |
20130157469 | Semiconductor Processing System with Source for Decoupled Ion and Radical Control - A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support. | 06-20-2013 |
20130203261 | PLASMA TUNING RODS IN MICROWAVE RESONATOR PROCESSING SYSTEMS - A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space. | 08-08-2013 |
20130224961 | PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES - A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber. | 08-29-2013 |
20140124478 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The present disclosure provides a plasma processing apparatus, including: a processing chamber; an oscillator configured to output high-frequency power; a power supply unit configured to supply the high-frequency power from a specific plasma generating location into the processing chamber; a magnetic field forming unit provided outside the processing chamber and configured to forming a magnetic field at least at the specific plasma generating location; and a control unit configured to control the magnetic field formed by the magnetic field forming unit such that a relationship between an electron collision frequency fe of plasma generated in the processing chamber and a cyclotron frequency fc is fc>fe. | 05-08-2014 |
20140231016 | PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region. | 08-21-2014 |
20140262040 | METHOD AND SYSTEM USING PLASMA TUNING RODS FOR PLASMA PROCESSING - A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion. | 09-18-2014 |
20140356984 | SOLID STATE SOURCE INTRODUCTION OF DOPANTS AND ADDITIVES FOR A PLASMA DOPING PROCESS - A method of doping a non-planar surface or a surface of a substrate subject to poor view factors is provided. The processing chamber comprises a window, walls, and a bottom of the processing chamber with oxygen-containing material, the processing chamber configured to supply oxygen radicals as an additive to doping materials. One or more quartz pieces are placed inside the processing chamber, where a magnet proximate to the processing chamber is configured to create a local magnetron plasma inside the processing chamber. Process gas containing an inert gas, sublimated doping materials, and optionally oxygen gas is flowed into the processing chamber; energy is applied to the process gas, generating a doping plasma used to expose a portion of the substrate surface while controlling operating variables to achieve target uniformity of dopant concentration, sheet resistance, degree of dopant clustering, and erosion of features on the substrate. | 12-04-2014 |
Patent application number | Description | Published |
20120255678 | Multi-Frequency Hollow Cathode System for Substrate Plasma Processing - A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes a plurality of electrically conductive plates stacked in a layered manner. Dielectric sheets are disposed between each adjacently positioned pair of the plurality of electrically conductive plates. A number of holes are each formed to extend through the plurality of electrically conductive plates and dielectric sheets. The system also includes at least two independently controllable radiofrequency (RF) power sources electrically connected to one or more of the plurality of electrically conductive plates. The RF power sources are independently controllable with regard to frequency and amplitude. | 10-11-2012 |
20120258555 | Multi-Frequency Hollow Cathode and Systems Implementing the Same - A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes an electrically conductive member shaped to circumscribe an interior cavity, and formed to have a process gas inlet in fluid communication with the interior cavity, and formed to have an opening that exposes the interior cavity to a substrate processing region. The system also includes a first radiofrequency (RF) power source in electrical communication with the electrically conductive member so as to enable transmission of a first RF power to the electrically conductive member. The system further includes a second RF power source in electrical communication with the electrically conductive member so as to enable transmission of a second RF power to the electrically conductive member. The first and second RF power sources are independently controllable with regard to frequency and amplitude. | 10-11-2012 |
20120258606 | E-Beam Enhanced Decoupled Source for Semiconductor Processing - A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support. | 10-11-2012 |
20120289054 | Semiconductor Processing System Having Multiple Decoupled Plasma Sources - A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma. | 11-15-2012 |