Patent application number | Description | Published |
20120188047 | INDUCTOR STRUCTURE HAVING INCREASED INDUCTANCE DENSITY AND QUALITY FACTOR - Disclosed is an inductor structure. The inductor structure includes a base material, at least one bottom spiral conductor disposed on the base material, a middle spiral conductor disposed on the bottom spiral conductor, a top spiral conductor disposed on the middle spiral conductor, and dielectric material separating the bottom, middle and top spiral conductors. The at least one bottom spiral conductor is connected electrically in parallel to the middle spiral conductor and the middle spiral conductor is connected electrically in series to the top spiral conductor. The top spiral conductor is thicker, narrower and less tightly wound than the middle spiral conductor and the bottom spiral conductor. | 07-26-2012 |
20130106554 | HIGH FREQUENCY INDUCTOR STRUCTURE HAVING INCREASED INDUCTANCE DENSITY AND QUALITY FACTOR | 05-02-2013 |
20140264738 | FOLDED CONICAL INDUCTOR - A semiconductor inductor structure may include a first spiral structure, located on a first metal layer, having a first outer-spiral electrically conductive track and a first inner-spiral electrically conductive track separated from the first outer-spiral electrically conductive track by a first dielectric material. A second spiral structure, located on a second metal layer, having a second outer-spiral electrically conductive track and a second inner-spiral electrically conductive track separated from the second outer-spiral electrically conductive track by a second dielectric material may also be provided. The first outer-spiral electrically conductive track may be electrically coupled to the second outer-spiral electrically conductive track and the first inner-spiral electrically conductive track may be electrically coupled to the second inner-spiral electrically conductive track. The first outer-spiral conductive track is laterally offset relative to the second outer-spiral conductive track and the first inner-spiral conductive track is laterally offset relative to the second inner-spiral conductive track. | 09-18-2014 |
20150028979 | HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE - A transformer structure includes at least three sections, each corresponding to metal layers of an integrated circuit. A first section of the at least three sections is electrically coupled to a third section with a second section disposed between the first and third sections. The at least three sections includes inductor coils, all of which are wound in a same direction and voltage phase starting at an outer terminal and continuing to an inner terminal of each inductor coil. At least one radial wiring channel passes through a portion of a coil in one of the three sections to provide an external connection to an internal terminal of the coil in at least one of the three sections. | 01-29-2015 |
20150028982 | HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STURCTURE - A transformer structure includes a first coil having two sections of spiral, with a top section including a plurality of metal layers occupying top X metal layers and a bottom section including a plurality of metal layers occupying bottom Z metal layers, where X and Z represent a number of metal layers having a specific number selected to provide a particular performance of the first coil. A second coil of the transformer is disposed between the two sections of the first coil and includes a plurality of metal layers where Y represents a number of vertically adjacent metal layers, with the specific number chosen to provide the particular performance, such that a sum X+Y+Z represents a total number of vertical metal layers for the transformer structure. | 01-29-2015 |
20150028986 | HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE - An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups. | 01-29-2015 |
20150028987 | HIGH EFFICIENCY ON-CHIP 3D TRANSFORMER STRUCTURE - An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track includes first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including a plurality of adjacent turns of one or more radii within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups. | 01-29-2015 |
20150364241 | SOLENOIDAL SERIES STACKED MULTIPATH INDUCTOR - A series stacked, solenoidally wound, multipath inductor includes a plurality of turns disposed about a center region on two layers. The turns on the two layers have corresponding geometry therebetween. Each of the plurality of turns includes two or more segments that extend length-wise along the turns. The segments have positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A cross-over architecture is configured to couple the segments of a turn on one layer with the segments on a turn on another layer to form segment paths that have a substantially same length for all segment paths in a segment path grouping between the two layers. | 12-17-2015 |
20150364248 | HIGH-Q MULTIPATH PARALLEL STACKED INDUCTOR - A parallel stacked multipath inductor includes a first layer including turns disposed about a center region, the turns on the first layer having segments that extend length-wise along the turns, the segments having positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A second layer includes turns electrically connected to the first layer along its length and disposed about the center region, the turns on the second layer having segments that extend length-wise along the turns, the segments having positions that vary from an innermost position and an outermost position relative to the center region. Cross-over architectures are configured to couple the segments on the first layer with the segments on the second layer to form segment paths that have a substantially same length for all segment paths per turn between the first and second layers. | 12-17-2015 |