Vellaisamy
A.l. Roy Vellaisamy, Kowloon HK
Patent application number | Description | Published |
---|---|---|
20130217811 | PHTHALOCYANINE/ POLYMER NANOCOMPOSITE INK FOR OPTOELECTONICS - Aspects describe phthalocyanine (Pc) molecules with peripheral modifications of its core (e.g., alkyl substituents) so that the Pc can self assemble, for example under vacuum sublimation, and form nanocrystals of a size on the order of nanometers. The Pc nanocrystals can be prepared, for example, by a simple vapor deposition method. Further aspects describe a polymer composite ink based Pc nanocrystals in a polymer matrix, which can be formed, for example, under a solution process approach. For example, the polymer matrix can be a different p-type conjugated polymer from the Pc nanocrystals, which are inherently p-type semi-conductors. This can increase the film formation ability and charge transport properties of the polymer composite ink. The polymer composite ink can be utilized, for example, in the fabrication of optoelectronic devices, such as photovoltaic devices and/or thin film transistors. The optoelectronic devices can exhibit high power conversion efficiency (PCE), for example 6-7 percent. | 08-22-2013 |
A.l. Roy Vellaisamy, Hong Kong CN
Patent application number | Description | Published |
---|---|---|
20140042494 | METAL NANOPARTICLE MONOLAYER - This disclosure generally relates to a device with a monolayer of metal nanoparticles and a method for making the same. The nanoparticles of the monolayer of metal nanoparticles are grouped in an ultrahigh density with an average distance between each neighboring metal nanoparticle less than or equal to about 3 nanometers. The monolayer can be self-assembled on a substrate to facilitate controllable voltage shifts within the device. | 02-13-2014 |
Arul Lenus Roy Vellaisamy, Hong Kong HK
Patent application number | Description | Published |
---|---|---|
20140197405 | RFID TAGS BASED ON SELF-ASSEMBLY NANOPARTICLES - A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed. | 07-17-2014 |
Roy A. L. Vellaisamy, Hong Kong CN
Patent application number | Description | Published |
---|---|---|
20140000669 | THERMO-ELECTRIC GENERATOR MODULE | 01-02-2014 |