Patent application number | Description | Published |
20080199649 | VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY - A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm | 08-21-2008 |
20080265379 | Laser Diode Orientation on Mis-Cut Substrates - A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate ( | 10-30-2008 |
20100148320 | VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY - A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm | 06-17-2010 |
20100289122 | III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME - A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 10 | 11-18-2010 |
20100301351 | HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME - The present invention relates to various switching device structures including Schottky diode, P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration (<1E16 cm | 12-02-2010 |
20110089536 | ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES - A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <11 | 04-21-2011 |
20110140122 | LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME - Large area single crystal III-V nitride material having an area of at least 2 cm | 06-16-2011 |
20120181547 | HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME - The present invention relates to various switching device structures including Schottky diode, P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration (<1E16 cm | 07-19-2012 |
20130193444 | HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME - The present invention relates to various switching device structures including Schottky diode, P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration (<1E16 cm | 08-01-2013 |
20140124010 | THIN FILM THERMOELECTRIC DEVICES HAVING FAVORABLE CRYSTAL TILT - A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed. | 05-08-2014 |