Patent application number | Description | Published |
20110113401 | T-COIL NETWORK DESIGN FOR IMPROVED BANDWIDTH AND ELECTROSTATIC DISCHARGE IMMUNITY - A method of generating a circuit design comprising a T-coil network includes determining inductance for inductors and a parasitic bridge capacitance of the T-coil network. The parasitic bridge capacitance is compared with a load capacitance metric that depends upon parasitic capacitance of a load coupled to an output of the T-coil network. An amount of electrostatic discharge (ESD) protection of the circuit design that is coupled to the output of the T-coil network and/or a parameter of the inductors of the T-coil network is selectively adjusted according to the comparison. The circuit design, which can specify inductance of the inductors, the amount of ESD protection, and/or the width of windings of the inductors, is outputted. | 05-12-2011 |
20110248811 | STACKED DUAL INDUCTOR STRUCTURE - The dual inductor structure can include a first inductor including a first plurality of coils. Each coil of the first plurality of coils can be disposed within a different one of a plurality of conductive layers. The coils of the first plurality of coils can be vertically stacked and concentric to a vertical axis. The dual inductor structure further can include a second inductor including a second plurality of coils. Each of the second plurality of coils can be disposed within a different one of the plurality of conductive layers. The coils of the second plurality of coils can be vertically stacked and concentric to the vertical axis. Within each conductive layer, a coil of the second plurality of coils can be disposed within an inner perimeter of a coil of the first plurality of coils. | 10-13-2011 |
20120092081 | TUNABLE RESONANT CIRCUIT IN AN INTEGRATED CIRCUIT - A tunable resonant circuit includes first and second capacitors that provide a matched capacitance between first and second electrodes of the first and second capacitors. A deep-well arrangement includes a first well disposed within a second well in a substrate. The first and second capacitors are each disposed on the first well. Two channel electrodes of a first transistor are respectively coupled to the second electrode of the first capacitor and the second electrode of the second capacitor. Two channel electrodes of a second transistor are respectively coupled to the second electrode of the first capacitor and to ground. Two channel electrodes of the third transistor are respectively coupled to the second electrode of the second capacitor and to ground. The gate electrodes of the first, second, and third transistors are responsive to a tuning signal, and an inductor is coupled between the first electrodes of the first and second capacitors. | 04-19-2012 |
20120092119 | MULTIPLE-LOOP SYMMETRICAL INDUCTOR - A symmetrical inductor includes pairs of half-loops, first and second terminal electrodes, and a center-tap electrode. The half-loop pairs are in respective conductive layers of an integrated circuit. Each half-loop pair includes a first and second half-loop in the respective conductive layer. The first and second terminal electrodes are in a first conductive layer, and the center-tap electrode is in a second conductive layer. The first terminal electrode and the center-tap electrode are coupled through a first series combination that includes the first half-loop of each half-loop pair. The second terminal electrode and the center-tap electrode are coupled through a second series combination that includes the second half-loop of each half-loop pair. | 04-19-2012 |
20120212315 | MULTIPLE-LOOP SYMMETRICAL INDUCTOR - A symmetrical inductor includes an integrated circuit having a plurality of conductive layers. A first loop is disposed in an upper layer of the conductive layers, and at least two strapped loops are disposed in at least two layers of the conductive layers, respectively. The strapped loops are coupled in series to the first loop, and the at least two layers are below the upper layer. A second loop is disposed in the upper layer and is coupled in series to the at least two strapped loops. A first terminal electrode is coupled to the first loop, and a second terminal electrode is coupled to the second loop. A center-tap electrode is coupled to the at least two strapped loops. | 08-23-2012 |
20120248569 | INTERPOSER HAVING AN INDUCTOR - An embodiment of a multichip module is disclosed. For this embodiment of a multichip module, a semiconductor die and an interposer are included. The interposer has conductive layers, dielectric layers, and a substrate. Internal interconnect structures couple the semiconductor die to the interposer. External interconnect structures are for coupling the interposer to an external device. A first inductor includes at least a portion of one or more of the conductive layers of the interposer. A first end of the first inductor is coupled to an internal interconnect structure of the internal interconnect structures. A second end of the first inductor is coupled to an external interconnect structure of the external interconnect structures. | 10-04-2012 |
20130020675 | INDUCTIVE STRUCTURE FORMED USING THROUGH SILICON VIAS - An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV. | 01-24-2013 |
20130176647 | DRIVER CIRCUIT AND METHOD OF GENERATING AN OUTPUT SIGNAL - A driver circuit of an integrated circuit is described. The driver circuit comprises a signal node coupled to receive an output signal of the integrated circuit; an inductor circuit having a resistor coupled in series with an inductor between a first terminal and a second terminal, wherein the first terminal is coupled to the signal node; an electro-static discharge protection circuit coupled to the second terminal of the inductor circuit; and an output node coupled to the second terminal of the inductor circuit. A method of generating an output signal is also disclosed. | 07-11-2013 |