Varesi
Andreas Varesi, Munich DE
Patent application number | Description | Published |
---|---|---|
20080282773 | DEVICE FOR PASSING THROUGH A GAS MIXTURE - A device for passing through a gas mixture comprises a capillary apparatus with one or more capillaries connecting a first side of the capillary apparatus to a second side of the capillary apparatus, wherein each capillary tapers from one side towards the other side of the capillary apparatus at least in sections. | 11-20-2008 |
20100229552 | DEVICE AND METHOD FOR GAS ENRICHMENT OR GENERATION OF MECHANICAL POWER - The present invention relates to a device comprising: | 09-16-2010 |
Andreas Varesi, Munchen DE
Patent application number | Description | Published |
---|---|---|
20130291730 | Gas Separation Device - A gas separation device comprises a gas separation layer, a first gas volume and a second gas volume, the gas separation layer being arranged between the first gas volume and the second gas volume, the gas separation layer having at least one aperture connecting the first gas volume to the second gas volume. The aperture is configured to taper from the first gas volume to the second gas volume and being dimensioned to enrich a component of the second gas volume in the first gas volume, wherein the aperture is configured as an elongated opening in the gas separation layer, the aperture having a minimum opening width of essentially one time to twenty times the mean free path length of the component of the second gas volume, which is to be enriched. | 11-07-2013 |
Enrico Varesi, Milano IT
Patent application number | Description | Published |
---|---|---|
20130187111 | Memory Cells - Some embodiments include memory cells which contain chalcogenide material having germanium in combination with one or both of antimony and tellurium. An atomic percentage of the germanium within the chalcogenide material is greater than 50%; and may be, for example, within a range of from greater than or equal to about 52% to less than or equal to about 78%. In some embodiments, the memory cell has a top electrode over the chalcogenide material, a heater element under and directly against the chalcogenide material, and a bottom electrode beneath the heater element. The heater element may be L-shaped, with the L-shape having a vertical pillar region joining with a horizontal leg region. A bottom surface of the horizontal leg region may be directly against the bottom electrode, and a top surface of the vertical pillar region may be directly against the chalcogenide material. | 07-25-2013 |
Enrico Varesi, Milan IT
Patent application number | Description | Published |
---|---|---|
20140147965 | HEATING PHASE CHANGE MATERIAL - A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating. | 05-29-2014 |