Patent application number | Description | Published |
20080203407 | Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip - A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified. | 08-28-2008 |
20080212191 | Optical arrangement and optical method - An optical arrangement comprising at least one first light-emitting element (LE | 09-04-2008 |
20090045426 | Semiconductor chip and method for producing a semiconductor chip - A semiconductor chip ( | 02-19-2009 |
20090090900 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 04-09-2009 |
20090206348 | Composite Substrate, and Method for the Production of a Composite Substrate - A composite substrate ( | 08-20-2009 |
20090296018 | Light-Emitting Device - A light-emitting device, comprising: a radiation source ( | 12-03-2009 |
20090315048 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip ( | 12-24-2009 |
20100038664 | Semiconductor Chip and Method for Producing a Semiconductor Chip - A semiconductor chip includes a carrier and a semiconductor body, which includes a semiconductor layer sequence having an active region provided for generating radiation. The carrier has a first carrier area facing the semiconductor body and a second carrier area remote from the semiconductor body. The semiconductor body is cohesively fixed to the carrier by means of a connection layer. A plurality of reflective or scattering elements are formed between the second carrier area and the active region. | 02-18-2010 |
20100066254 | Light-Emitting Device - One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength. | 03-18-2010 |
20100091516 | Arrangement Comprising a Fiber-Optic Waveguide - An arrangement comprising a fiber-optic waveguide ( | 04-15-2010 |
20100207100 | Radiation-Emitting Semiconductor Body - A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body. | 08-19-2010 |
20100295438 | Semiconductor Light Source Having a Primary Radiation Source and a Luminescence Conversion Element - A semiconductor light source is provided, the semiconductor light source having a primary radiation source ( | 11-25-2010 |
20110007767 | Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface. | 01-13-2011 |
20110051766 | Laser Light Source - A laser light source comprises, in particular, a semiconductor layer sequence ( | 03-03-2011 |
20110051771 | Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component contains an epitaxial layer sequence ( | 03-03-2011 |
20110156069 | Optoelectronic Semiconductor Chip and Method for the Production Thereof - A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified. | 06-30-2011 |
20110235664 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application. | 09-29-2011 |
20110243169 | Edge Emitting Semiconductor Laser Chip - An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip. | 10-06-2011 |
20110266567 | Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component - A method for manufacturing a radiation-emitting component ( | 11-03-2011 |
20120039072 | Luminous Means and Projector Comprising at Least One Luminous Means of this Type - In at least one embodiment of the light source ( | 02-16-2012 |
20120250715 | Optoelectronic Semiconductor Component - In at least one embodiment of the optoelectronic semiconductor component ( | 10-04-2012 |
20120280207 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 11-08-2012 |
20120326178 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner. | 12-27-2012 |
20130028281 | Optoelectronic Semiconductor Chip - In at least one embodiment of the optoelectronic semiconductor chip ( | 01-31-2013 |
20130128909 | Edge-Emitting Semiconductor Laser - An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body. | 05-23-2013 |
20130266035 | Housing and Method for Producing a Housing - A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed. | 10-10-2013 |
20130272329 | LASER DIODE DEVICES - A laser diode device including a housing having a mounting area in a cavity of the housing, at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation, at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, and a deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element, wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element, the covering element connects to the housing, and the covering element tightly closes the housing. | 10-17-2013 |
20130272333 | Laser Diode Device - A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 μm. | 10-17-2013 |
20130343419 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied. | 12-26-2013 |
20140045279 | Semiconductor Component and Method for Producing a Semiconductor Component - A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from the active region is removed in regions. The material is removed using a dry-chemical removal of the semiconductor layer sequence. A property of a process gas is monitored during the removal to determine that the indicator layer has been reached based on a change in the property of the process gas. | 02-13-2014 |
20140092931 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part. | 04-03-2014 |
20140334508 | Semiconductor Laser Diode - A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence | 11-13-2014 |
20140341247 | Laser Diode Device - A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm. | 11-20-2014 |
20140362883 | Laser Diode Assembly - A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied. | 12-11-2014 |
20150063395 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: | 03-05-2015 |