Patent application number | Description | Published |
20090189194 | Electrostatic Discharge (ESD) Protection Circuit Placement in Semiconductor Devices - Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one electrostatic discharge (ESD) protection circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices. | 07-30-2009 |
20090189195 | Radio Frequency (RF) Circuit Placement in Semiconductor Devices - Semiconductor devices, methods of manufacturing thereof, and methods of arranging circuit components of an integrated circuit are disclosed. In one embodiment, a semiconductor device includes an array of a plurality of devices arranged in a plurality of rows. At least one radio frequency (RF) circuit or a portion thereof is disposed in at least one of the plurality of rows of the array of the plurality of devices. | 07-30-2009 |
20090220893 | Method for Patterning a Semiconductor Wafer - A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask. | 09-03-2009 |
20100073648 | Masks and Methods of Manufacture Thereof - Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment includes a method of generating an assist feature of a lithography mask. The method includes providing a layout for a material layer of a semiconductor device, the layout including a pattern for at least one feature of the semiconductor device. The method includes forming an assist feature in the pattern for the at least one feature, wherein the assist feature extends completely through the pattern for the at least one feature. | 03-25-2010 |
20100124820 | Method of Making a Contact in a Semiconductor Device - To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask. | 05-20-2010 |
20100301457 | Lithography Masks, Systems, and Manufacturing Methods - Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position. | 12-02-2010 |
20120155608 | Lithography Masks, Systems, and Manufacturing Methods - Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position. | 06-21-2012 |
20140099799 | Lithography Masks, Systems, and Manufacturing Methods - Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position. | 04-10-2014 |