Patent application number | Description | Published |
20140198588 | N-WELL SWITCHING CIRCUIT - A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness. | 07-17-2014 |
20140369152 | N-WELL SWITCHING CIRCUIT - A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness. | 12-18-2014 |
20150043265 | N-WELL SWITCHING CIRCUIT - A thin gate-oxide dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit is configured to bias the switched n-well to prevent voltage damage to the dual-mode PMOS transistor without the use of native transistors. | 02-12-2015 |
20150242213 | SYSTEM AND METHOD FOR MODIFICATION OF CODED INSTRUCTIONS IN READ-ONLY MEMORY USING ONE-TIME PROGRAMMABLE MEMORY - Various embodiments of methods and systems for flexible read only memory (“ROM”) storage of coded instructions in a portable computing device (“PCD”) are disclosed. Because certain instructions and/or data associated with a primary boot loader (“PBL”) may be defective or in need of modification after manufacture of a mask ROM component, embodiments of flexible ROM storage (“FRS”) systems and methods use a closely coupled one-time programmable (“OTP”) memory component to store modified instructions and/or data. Advantageously, because the OTP memory component may be manufactured “blank” and programmed at a later time, modifications to code and/or data stored in an unchangeable mask ROM may be accomplished via pointers in fuses of a security controller that branch the request to the OTP and bypass the mask ROM. | 08-27-2015 |
20150269978 | METHOD AND APPARATUS FOR LOW-LEVEL INPUT SENSE AMPLIFICATION - A sense amplifier is disclosed that includes an amplifier circuit configured to receive, at an input, an input signal including an input level, the amplifier circuit configured to provide an amplified output signal including a gain with respect to the input level; and a feedback circuit coupled to receive the amplified output signal from the amplifier circuit, the feedback circuit configured to provide, at the input of the amplifier circuit, an adjusted version of the amplified output signal including a modified output magnitude based on common mode feedback. | 09-24-2015 |