Patent application number | Description | Published |
20080206968 | Manufacturing method of semiconductor device - To create a laminated film of a silicon oxide film and a silicon nitride film, with large current driving force and large dielectric constant. A manufacturing method of a semiconductor device includes: forming an amorphous silicon film on the silicon oxide film; and forming a single crystal silicon film by annealing the amorphous silicon film. | 08-28-2008 |
20090169768 | Substrate processing method and substrate processing apparatus - A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. | 07-02-2009 |
20120108061 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed. | 05-03-2012 |
20120108080 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port. | 05-03-2012 |
20130095669 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. | 04-18-2013 |
Patent application number | Description | Published |
20090050056 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF - A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit. | 02-26-2009 |
20120129358 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit. | 05-24-2012 |
20150089924 | EXHAUST GAS PROCESSING DEVICE, EXHAUST GAS PROCESSING SYSTEM, METHOD FOR CONTROLLING EXHAUST GAS PROCESSING SYSTEM, CONTROL PROGRAM, AND CYLINDRICAL TUBE - An exhaust gas processing system includes a cylindrical tube through which an exhaust gas of an engine passes, a sensor configured to detect information regarding the exhaust gas discharged from the engine, a coil antenna provided on an outer periphery of the cylindrical tube and connected to a high-frequency power supply, and a control unit configured to control output power of the high-frequency power supply. The control unit controls output power of the high-frequency power supply based on the information detected by the sensor. | 04-02-2015 |