Patent application number | Description | Published |
20080241712 | Method and system for patterning a mask layer - The presently described embodiments use a printing process, e.g. a wax printing technique, to pattern a mask layer (such as a soldermask layer) of, for example, a printed circuit. Substantially all other conventional processes in developing soldermask and exposure processes can be maintained. According to the presently described embodiments, each printed circuit will have a unique pattern that matches uniform and non-uniform runout. In one form, the pattern is comprised of wax single drops having a specified gap to make the process transparent to the current industry practice. Furthermore, the single drops can be used for both large and small areas without any development time differences. In at least one form, the wax pattern and the soldermask in the gap are removed during development. | 10-02-2008 |
20090123873 | Lamination for Printed Photomask - A method for masking regions of photoresist in the manufacture of a soldermask for printed circuit boards is disclosed. Following application of photoresist over patterned traces on a substrate, a sheet-like thin film is applied over the photosensitive material. The thin film may adhere to the photosensitive material by way of the adhesive state of the photosensitive material or by way of an adhesive applied to the photosensitive material or the thin film or carried by the thin film. Digital mask printing may proceed on the surface of the thin film. The photosensitive material may then be exposed through the printed photomask, the thin film (with photomask) removed, and the photosensitive material developed. | 05-14-2009 |
20090130298 | Method for Obtaining Controlled Sidewall Profile in Print-Patterned Structures - High aspect ratio structures can be obtained by print-patterning masking features in feature stacks such that each feature has a lateral edge which is aligned in a plane roughly perpendicular to the plane of the substrate on which the features are formed. Due to the differential lateral spreading between features formed on a substrate and formed atop other features, the print head is indexed less than the radius of a droplet to a position where a droplet ejected by the print head forms an upper feature atop a lower feature such that the lateral edges of the upper and lower features are aligned in the plane roughly perpendicular to the plane of the substrate. Feature stacks of two or more features may provide a vertical (or re-entrant) sidewall mask for formation of high aspect ratio structures, by e.g., electroplating, etc. | 05-21-2009 |
20090155732 | Method for Patterning Using Phase-Change Material - A patterned layer over a wafer is produced by depositing a print-patterned mask structure. Energized particles of a target material are deposited over the wafer and the print-patterned mask such that particles of said target material incident on the mask structure enter the mask structure body and minimally accumulate, if at all, on the surface of the mask structure, and otherwise the particles of target material accumulate as a generally uniform layer over the wafer. The print-patterned mask structure, including particles of target material therein, is removed leaving the generally uniform layer of target material as a patterned layer over the wafer. | 06-18-2009 |
20100040981 | Tuning Optical Cavities - A tunable optical cavity can be tuned by relative movement between two reflection surfaces, such as by deforming elastomer spacers connected between mirrors or other light-reflective components that include the reflection surfaces. The optical cavity structure includes an analyte region in its light-transmissive region, and presence of analyte in the analyte region affects output light when the optical cavity is tuned to a set of positions. Electrodes that cause deformation of the spacers can also be used to capacitively sense the distance between them. Control circuitry that provides tuning signals can cause continuous movement across a range of positions, allowing continuous photosensing of analyte-affected output light by a detector. | 02-18-2010 |
20100294349 | BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES - Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes. | 11-25-2010 |
20100294352 | METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION - Layered metal structures are patterned to form a surface with some locations having an alloy along the top surface at some locations and the original top metal layer at other locations along the surface. The alloy and original top metal layer can be selected to have differential etching properties such that the pattern of the alloy or original metal can be selectively etched to form a patterned metal interconnect. In general, the patterning is performed by localized heating that drives formation of the alloy at the heated locations. The metal patterning can be useful for solar cell applications as well as for electronics applications, such as display applications. | 11-25-2010 |
20110087717 | METHOD FOR DECIMATION OF IMAGES - In the case of printing at high addressability, where the cell size is smaller than the spot size, an image can be decimated in a manner that will limit the large accumulation of printed material. The proper decimation of the image will depend on the spot size, the physics of drop coalescence and the addressability during printing. A simple method of using concentric decimation is disclosed herein to enable this process. | 04-14-2011 |
20110087718 | METHOD FOR DECIMATION OF IMAGES - In the case of printing at high addressability, where the cell size is smaller than the spot size, an image can be decimated in a manner that will limit the large accumulation of printed material. The proper decimation of the image will depend on the spot size, the physics of drop coalescence and the addressability during printing. A simple method of using concentric decimation is disclosed herein to enable this process. | 04-14-2011 |
20110120537 | SILICON INKS FOR THIN FILM SOLAR CELL FORMATION, CORRESPONDING METHODS AND SOLAR CELL STRUCTURES - High quality silicon inks are used to form polycrystalline layers within thin film solar cells having a p-n junction. The particles deposited with the inks can be sintered to form the silicon film, which can be intrinsic films or doped films. The silicon inks can have a z-average secondary particle size of no more than about 250 nm as determined by dynamic light scattering on an ink sample diluted to 0.4 weight percent if initially having a greater concentration. In some embodiments, an intrinsic layer can be a composite of an amorphous silicon portion and a crystalline silicon portion. | 05-26-2011 |
20110318905 | SILICON/GERMANIUM NANOPARTICLE INKS, LASER PYROLYSIS REACTORS FOR THE SYNTHESIS OF NANOPARTICLES AND ASSOCIATED METHODS - Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles. | 12-29-2011 |
20120169820 | Method for Patterning Using Phase-Change Material - A patterned layer over a wafer is produced by depositing a print-patterned mask structure. Energized particles of a target material are deposited over the wafer and the print-patterned mask such that particles of said target material incident on the mask structure enter the mask structure body and minimally accumulate, if at all, on the surface of the mask structure, and otherwise the particles of target material accumulate as a generally uniform layer over the wafer. The print-patterned mask structure, including particles of target material therein, is removed leaving the generally uniform layer of target material as a patterned layer over the wafer. | 07-05-2012 |
20120193769 | SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON INKS AND CORRESPONDING PROCESSES - The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells. | 08-02-2012 |
20130105806 | STRUCTURES INCORPORATING SILICON NANOPARTICLE INKS, DENSIFIED SILICON MATERIALS FROM NANOPARTICLE SILICON DEPOSITS AND CORRESPONDING METHODS | 05-02-2013 |
20130189831 | SILICON/GERMANIUM NANOPARTICLE INKS AND METHODS OF FORMING INKS WITH DESIRED PRINTING PROPERTIES - Improved silicon/germanium nanoparticle inks are described that have silicon/germanium nanoparticles well distributed within a stable dispersion. In particular the inks are formulated with a centrifugation step to remove contaminants as well as less well dispersed portions of the dispersion. A sonication step can be used after the centrifugation, which is observed to result in a synergistic improvement to the quality of some of the inks. The silicon/germanium ink properties can be engineered for particular deposition applications, such as spin coating or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon/germanium nanoparticles. The silicon/germanium nanoparticles are well suited for forming semiconductor components, such as components for thin film transistors or solar cell contacts. | 07-25-2013 |
20130221286 | SILICON/GERMANIUM NANOPARTICLE INKS, LASER PYROLYSIS REACTORS FOR THE SYNTHESIS OF NANOPARTICLES AND ASSOCIATED METHODS - Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles. | 08-29-2013 |
20140106551 | BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES - Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes. | 04-17-2014 |
20140151706 | STRUCTURES INCORPORATING SILICON NANOPARTICLE INKS, DENSIFIED SILICON MATERIALS FROM NANOPARTICLE SILICON DEPOSITS AND CORRESPONDING METHODS - Silicon nanoparticle inks provide a basis for the formation of desirable materials. Specifically, composites have been formed in thin layers comprising silicon nanoparticles embedded in an amorphous silicon matrix, which can be formed at relatively low temperatures. The composite material can be heated to form a nanocrystalline material having crystals that are non-rod shaped. The nanocrystalline material can have desirable electrical conductive properties, and the materials can be formed with a high dopant level. Also, nanocrystalline silicon pellets can be formed from silicon nanoparticles deposited form an ink in which the pellets can be relatively dense although less dense than bulk silicon. The pellets can be formed from the application of pressure and heat to a silicon nanoparticle layer. The materials described herein can be effectively used for the formation of doped contacts for crystalline silicon solar cells, thin film silicon solar cells, electronic devices, such as printed electronics, and other useful products. | 06-05-2014 |
20140162445 | SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON BASED INKS AND CORRESPONDING PROCESSES - The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells. | 06-12-2014 |
20140179049 | SILICON/GERMANIUM-BASED NANOPARTICLE PASTES WITH ULTRA LOW METAL CONTAMINATION - Silicon based nanoparticle inks are described with very low metal contamination levels. In particular, metal contamination levels can be established in the parts-per-billion range. The inks of particular interest generally comprise a polymer to influence the ink rheology. Techniques are described that are suitable for purifying polymers soluble in polar solvents, such as alcohols, with respect metal contamination. Very low levels of metal contamination for cellulose polymers are described. | 06-26-2014 |