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Ueda, Hyogo

Hirokazu Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090208707THIN FILM FORMING METHOD AND LAYERED STRUCTURE OF THIN FILM - Disclosed is a thin film forming method including: a prevention film forming process for forming a charging damage prevention film for preventing a charging damage on a surface of a target object by a sputtering; and a thin film forming process for forming a desired thin film on a surface of the charging damage prevention film, which is formed on the surface of the target object, by a sputtering.08-20-2009
20100075066PLASMA FILM FORMING APPARATUS AND PLASMA FILM FORMING METHOD - A plasma film forming apparatus includes: a processing chamber; a mounting table for mounting thereon a target object; a ceiling plate which is installed at a ceiling portion and is made of a dielectric material; a gas introduction mechanism for introducing a processing gas including a film formation source gas and a supporting gas; and a microwave introduction mechanism which is installed at a ceiling plate's side and has a planar antenna member. The gas introduction mechanism includes: a central gas injection hole for the source gas, located above a central portion of the target object; and a plurality of peripheral gas injection holes for the source gas, arranged above a peripheral portion of the target object along a circumferential direction thereof. A plasma shielding member is installed above the target object and between the central gas injection hole and the peripheral gas injection holes along the circumferential direction thereof.03-25-2010
20120003842METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber 01-05-2012

Patent applications by Hirokazu Ueda, Hyogo JP

Hiroko Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090036855Particulate water-absorbing agent with water-absorbing resin as main component, method for production of the same, and absorbing article - Reversed phase suspension polymerization is allowed while controlling content of minor components in monomer, particularly controlling a content of acetic acid and propionic acid being not higher than 500 ppm, controlling a content of acrylic acid dimer being not higher than 1000 ppm, in acrylic acid. Cross-linked polymer obtained by the polymerization is subjected to a surface crosslinking treatment without substantially using an organic solvent, and under heating at high temperature (150° C. or higher and 250° C. or lower). Thereafter, agglomeration is carried out without substantially using an organic solvent. Accordingly, a particulate water-absorbing agent including a water-absorbing resin having superior property, and being suited for practical applications at high concentrations in absorbing cores such as a diaper and the like without generation of any odor of the organic solvent can be obtained because no volatile organic compound is included.02-05-2009
20090298685WATER ABSORBING AGENT, WATER ABSORBENT CORE USING THE AGENT, AND MANUFACTURING METHOD FOR WATER ABSORBING AGENT - A water absorbing agent of the present invention has an internal crosslinking structure obtained by polymerization of a water-soluble unsaturated monomer. The agent satisfies conditions (a) to (d): (a) the agent contains water-insoluble inorganic particles at an amount of from 10 ppm to 1,900 ppm inclusive; (b) the agent contains 5 mass % or less particles which have such a size that they can pass through a sieve having a mesh opening size of 150 μm; (c) the agent has an absorbency against a pressure of 4.83 kPa (AAP) of 18 g/g or more; and (d) the water-insoluble inorganic particles reside on a surface of the water absorbing resin or near the surface.12-03-2009

Patent applications by Hiroko Ueda, Hyogo JP

Mikiya Ueda, Hyogo JP

Patent application numberDescriptionPublished
20110110050STRUCTURE WITH ELECTRONIC COMPONENT MOUNTED THEREIN AND METHOD FOR MANUFACTURING SUCH STRUCTURE - A structure with electronic component mounted therein includes a wiring board on which an electronic component is mounted at least on its first face, resin provided at least between the electronic component and the wiring board, and a plurality of holes formed in the wiring board at region corresponding to a mounting position of the electronic component. The holes are filled with the resin. This suppresses warpage of the structure with electronic component mounted therein, and also improves reliability by reducing a stress applied to a bonding section between the wiring board and the electronic component.05-12-2011

Mokoto Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090029430Novel Carbonyl Reductase, Gene Therefor and Use Thereof - The present invention is to provide a process for efficiently producing an optically active alcohol including (R)-3-hydroxy-3-phenylpropanenitrile. One of the features of the present invention is a polypeptide having an activity of asymmetrically reducing 3-oxo-3-phenylpropanenitrile isolated from a microorganism belonging to the genus 01-29-2009

Naohiro Ueda, Hyogo JP

Patent application numberDescriptionPublished
20080268626Semiconductor device having a plurality of kinds of wells and manufacturing method thereof - A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level.10-30-2008
20090050978SEMICONDUCTOR DEVICE - A disclosed semiconductor device includes a driver transistor including a source and a drain of a second conductive type provided with an interval therebetween in a semiconductor substrate of a first conductive type, a gate electrode extending in a predetermined direction and provided on the semiconductor substrate via a gate insulating film between the source and the drain, plural insular back gate diffusion layers of the first conductive type provided in the source so as to be in contact with the semiconductor substrate, wherein the back gate diffusion layers are spaced apart and arranged in the predetermined direction in the source, and a contact hole extending in the predetermined direction on the source and at least one of the back gate diffusion layers.02-26-2009
20090064791STRESS-DISTRIBUTION DETECTING SEMICONDUCTOR PACKAGE GROUP AND DETECTION METHOD OF STRESS DISTRIBUTION IN SEMICONDUCTOR PACKAGE USING THE SAME - A disclosed stress-distribution detecting semiconductor package group includes multiple stress-distribution detecting semiconductor packages each formed by resin-encapsulating a stress detecting semiconductor chip of the same size using an identical resin encapsulation structure. Each stress detecting semiconductor chip includes a piezoelectric element for stress detection and at least two electrode pads electrically connected to the piezoelectric element to measure an electrical property of the piezoelectric element. The piezoelectric elements of the stress detecting semiconductor chips are respectively disposed on the corresponding stress detecting semiconductor chips to be located at different positions from one another when superimposed on a single imaginary semiconductor chip plane having the same plane size as that of the stress detecting semiconductor chips.03-12-2009
20090068811SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is disclosed that comprises a high breakdown voltage MOSFET. The MOSFET includes a source region of a second conductivity type and a drain region of the second conductivity type formed apart from each other in a well region of a first conductivity type, a channel region formed between the source region and the drain region, a gate insulation film formed on the channel region, a LOCOS oxide film having a greater film thickness than the gate insulation film and formed adjacent to the gate insulation film, and a gate electrode formed across the gate insulation film and the LOCOS oxide film.03-12-2009
20090309146SEMICONDUCTOR DEVICE - A disclosed semiconductor device includes a MOS transistor that causes no problems concerning the formation of a thick gate insulating film and that is applicable to high withstand voltage devices. A drain region has a double diffusion structure including an N-drain region 12-17-2009
20100193887Stress-Distribution Detecting Semiconductor Package Group And Detection Method Of Stress Distribution In Semiconductor Package Using The Same - A disclosed stress-distribution detecting semiconductor package group includes multiple stress-distribution detecting semiconductor packages each formed by resin-encapsulating a stress detecting semiconductor chip of the same size using an identical resin encapsulation structure. Each stress detecting semiconductor chip includes a piezoelectric element for stress detection and at least two electrode pads electrically connected to the piezoelectric element to measure an electrical property of the piezoelectric element. The piezoelectric elements of the stress detecting semiconductor chips are respectively disposed on the corresponding stress detecting semiconductor chips to be located at different positions from one another when superimposed on a single imaginary semiconductor chip plane having the same plane size as that of the stress detecting semiconductor chips.08-05-2010
20110185326NET LIST GENERATION METHOD AND CIRCUIT SIMULATION METHOD - Disclosed is a net list generation method of generating a net list based on layout data; stress map data indicating stress distribution on a silicon chip, the stress being generated due to packaging of the silicon chip; and standard curve data indicating a relationship between the stress and characteristic variation of a device. The method includes the steps of reading data items from the layout data; reading a value of stress at the position of the device from the stress map data; reading the characteristic variation of the device, the characteristic variation corresponding to the value of the stress, from the standard curve data corresponding to the device; and correcting characteristics of the device based on the characteristic variation.07-28-2011

Patent applications by Naohiro Ueda, Hyogo JP

Osamu Ueda, Hyogo JP

Patent application numberDescriptionPublished
20110135479TURBINE BLADE AND GAS TURBINE - Provided are turbine blades and a gas turbine capable of damping the vibrations caused by an excitation force and facilitating mounting/disassembly. Included are a shroud portion disposed at an end portion of an airfoil portion; a holder casing that can slide relative to the shroud portion, that can also be attached thereto/detached therefrom, and that forms a space with the shroud portion therebetween; and an elastic portion that is disposed in the space, that biases the shroud portion in a direction that separates it from the holder casing, and is disposed in a movable manner relative to the shroud portion; and a pressing portion that is disposed between the elastic portion and the holder casing and that can be moved toward and away from the shroud portion.06-09-2011

Shinya Ueda, Hyogo JP

Patent application numberDescriptionPublished
20110265678GAS GENERATOR - A gas generator includes an elongated cylindrical housing, a partition plate partitioning the space within the housing into a gas generating agent storing chamber and a filter chamber in the axial direction, and an igniter. A filter is made of a cylindrical member having a hollow portion extending in the axial direction of the housing. The partition plate includes an annular plate portion covering the end face of the filter closer to the gas generating agent storing chamber, a cylindrical portion continuously extending from the inner circumferential edge of the annular plate portion into the hollow portion of the filter to cover the inner circumferential surface of the filter closer to the end face, and a communication hole defined by the inner circumferential surface of the cylindrical portion and providing communication between the gas generating agent storing chamber and the filter chamber. The cylindrical portion has a cross-sectional area that is changed in accordance with an increase in the distance from the annular plate portion. This configuration can provide a gas generator that can be reduced in size and weight and readily be manufactured without deteriorating the performance.11-03-2011

Tadayoshi Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090091872EXCESS VOLTAGE PROTECTION CIRCUIT, METHOD OF PROTECTING A CIRCUIT FROM EXCESS VOLTAGE, AND SEMICONDUCTOR APPARATUS HAVING THE EXCESS VOLTAGE PROTECTION CIRCUIT - In a disclosed excess voltage protection circuit, when the input voltage equal to or higher than a predetermined maximum voltage is detected by an excess voltage detection circuit, a switching element is shut off so as to prevent the input voltage being output from the excess voltage protection circuit. A voltage obtained by dividing the input voltage using resistors is output from the excess voltage protection circuit.04-09-2009

Takahiro Ueda, Hyogo JP

Patent application numberDescriptionPublished
20110263906METHOD OF PRODUCING REDUCED COENZYME Q10 CRYSTALS WITH EXCELLENT HANDLING PROPERTIES - The present invention provides a method of producing reduced coenzyme Q10-27-2011

Patent applications by Takahiro Ueda, Hyogo JP

Takahisa Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090000264Process and Apparatus for Producing Yarn and Gland Packing - A yarn production process for enabling a yarn formed by filling the interior of a tubular member configured by knitting or braiding a fibrous material with expanded graphite as a base material, to be produced in a state of a high productivity in order to enable the yarn to be actually used in an economical manner. The process of producing a yarn formed by filling the interior of a tubular member configured by knitting or braiding a fibrous material with expanded graphite, the process has: a fine cutting step of successively cutting an expanded graphite sheet which is continuously supplied in a state where the sheet has a predetermined width, to a small width along the width direction of the sheet; and a supplying and filling step of guiding and supplying a strip-like expanded graphite material which is produced by the fine cutting step, into the tubular member to be filled into the tubular member.01-01-2009
20090108534Yarn and Gland Packing - A yarn mainly configured by expanded graphite is improved to be so highly flexible that the expanded graphite does not protrude in a usual bending process, in order to prevent partial missing of the expanded graphite from occurring when the yarn is twisted or braided to produce a gland packing. A yarn 04-30-2009
20100237570GASKET - A gasket having a concentrically waved metal sheet, i.e., a core member, which has a sheet of sealing-property layered and bonded on each of its opposite surfaces. The gasket has an enhanced adaptability of the sheet material and enables the thinner sheet to be used and at the same time makes it possible to ensure a stable sealing-property for a long period of time with a low to a high fastening-load applied. The metal sheet has valley portions, which were conventionally vacant gaps, and are filled with powdered sealing member to be embedded from the beginning. Therefore, the sheet at the valley portions of the metal sheet that conventionally could not be compressed with a low fastening-load applied can be compressed and even with the low fastening-load applied can secure a fastening surface-pressure over the entire surface. Further, since it is possible to suppress the deformation of the sheet in quantity, which was conventionally large, a sheet made of not only the high-fluidity material but also the low-fluidity material can be used as well as the thinner sheet.09-23-2010
20100264607GASKET - A gasket having a concentrically waved metal sheet, i.e., a core member, which has a PTFE sheet or an inorganic sheet of sealing-property layered and bonded on each of its opposite surfaces. The gasket makes it possible to ensure a stable sealing-property for a long period of time with a low to a high fastening-load applied. The metal sheet has valley portions, which were conventionally vacant gaps, and are filled with powdered sealing member to be embedded from the beginning. Therefore, the PTFE sheet or the inorganic sheet at the valley portions of the metal sheet that conventionally could not be compressed with a low fastening-load applied is compressed and even with the low fastening-load applied can secure a fastening surface-pressure over the entire surface. Further, since it is possible to suppress the deformation of the sheet in quantity, which was conventionally large, the PTFE sheet or the inorganic sheet each of low-fluidity are arranged so as not to be broken with a high fastening-load applied and the thinner PTFE sheet or the thinner inorganic sheet can be used.10-21-2010
20110162338YARN - A yarn which is configured by using expanded graphite and PTEE is provided while improving the yarn so that the expanded graphite functioning as a core member is not exposed and it can be simply produced.07-07-2011

Patent applications by Takahisa Ueda, Hyogo JP

Tomoyuki Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090195494LIQUID-CRYSTAL DISPLAY DEVICE AND ITS MANUFACTURING METHOD - A liquid-crystal display device comprises; a display panel having a matrix array of pixel dots in red, green or blue color; a surface illuminant device that has white-light LEDs as light sources; one or more driver ICs, each of which includes three converter circuits respectively for the red, the green and the blue and performs a conversion to signal voltages from image data signals according to a respective conversion curve; and a nonvolatile memory in which data determining the conversion curves are stored after the data are attuned to variation in chromaticity of the white-light LEDs in the surface illuminant device so that said variation is compensated based on measurement of the chromaticity of each of the white-light LEDs.08-06-2009

Yasumasa Ueda, Hyogo JP

Patent application numberDescriptionPublished
20120030845SCANNING PROBE MICROSCOPE - An atomic force microscope (AFM) (02-02-2012

Yasutoshi Ueda, Hyogo JP

Patent application numberDescriptionPublished
20100119428EXHAUST-GAS TREATMENT APPARATUS AND EXHAUST-GAS TREATMENT METHOD - An object is to provide an exhaust-gas treatment apparatus capable of realizing a dissolved-salt spray method easily and at low cost. An exhaust-gas treatment apparatus that removes SO05-13-2010
20100329957EXHAUST-GAS TREATMENT APPARATUS AND EXHAUST-GAS TREATMENT METHOD - An object is to provide an exhaust-gas treatment apparatus capable of realizing a dissolved-salt spray method easily and at low cost. An exhaust-gas treatment apparatus that removes SO12-30-2010

Yasuyoshi Ueda, Hyogo JP

Patent application numberDescriptionPublished
20100016634METHOD FOR STABILIZING CARBODIIMIDE DERIVATIVE AND STABILIZED COMPOSITION THEREOF - Disclosed is a method for stabilizing a carbodiimide derivative (1) which is a condensing agent useful for production of general synthetic chemical products. Also disclosed is a stabilized composition of the carbodiimide derivative. The method is characterized in that the carbodiimide derivative (1) is handled in an atmosphere wherein the concentration of molecular oxygen in the gas phase within a container is set at not more than 3% by volume and/or in the co-presence of at least one compound selected from the group consisting of antioxidants, N-oxyl compounds, sulfur compounds, amines and Lewis acids.01-21-2010
20110136191Processes for producing coenzyme Q10 - The present invention relates to a process for producing reduced coenzyme Q06-09-2011
20110263906METHOD OF PRODUCING REDUCED COENZYME Q10 CRYSTALS WITH EXCELLENT HANDLING PROPERTIES - The present invention provides a method of producing reduced coenzyme Q10-27-2011

Patent applications by Yasuyoshi Ueda, Hyogo JP

Yoshinori Ueda, Hyogo JP

Patent application numberDescriptionPublished
20090104084HYDROGEN PRODUCTION SYSTEM AND METHOD OF CONTROLLING FLOW RATE OF OFFGAS IN THE SYSTEM - A hydrogen manufacturing system for performing offgas flow control includes: a vaporizer (04-23-2009
20110012170SEMICONDUCTOR DEVICE USED IN STEP-UP DC-DC CONVERTER, AND STEP-UP DC-DC CONVERTER - A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency.01-20-2011

Patent applications by Yoshinori Ueda, Hyogo JP