Patent application number | Description | Published |
20120164773 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure. | 06-28-2012 |
20120223324 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence. | 09-06-2012 |
20120235157 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, the connecting layer being etchable by alkaline solution, a bottom surface of the second n-type GaN layer facing towards the connecting layer having a roughened exposed portion, the GaN on the bottom surface of the second n-type GaN layer having an N-face polarity, a blind hole extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer, and an annular rough portion formed on the bottom surface of the second n-type GaN layer and surrounding each blind hole. | 09-20-2012 |
20120273757 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity. | 11-01-2012 |
20120292633 | LIGHT EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - An LED array includes a substrate and a plurality of LEDs formed on the substrate. The LEDs are electrically connected with each other. Each of the LEDs includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the n-type GaN layer which connects the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity. A method for manufacturing the LED array is also provided. | 11-22-2012 |
20120326200 | FLIP-CHIP LIGHT EMITTING DIODE AND METHOD FOR MAKING THE SAME - A flip-chip light emitting diode comprising: a substrate; a circuit layer formed on the substrate, the circuit layer comprising a first electrode and a second electrode separated and electrically insulated from the first electrode; an LED chip arranged on the circuit layer, the LED chip comprising a positive electrode and a negative electrode, the positive electrode and the negative electrode which are located at a bottom face of the LED chip being in electrical connection to the first electrode and the second electrode of the circuit layer by solder, respectively; and a blocking structure located between the positive electrode and the negative electrode, the blocking structure being made of elastic and electrically insulating, colloidal material. | 12-27-2012 |
20130032815 | LIGHT EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence. A bottom surface of the n-type GaN layer connecting the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity. | 02-07-2013 |
20130032839 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers. | 02-07-2013 |
20130146837 | LIGHT EMITTING DIODE WITH MULTIPLE TRANSPARENT CONDUCTIVE LAYERS AND METHOD FOR MANUFACTURING THE SAME - An LED includes a first semiconductor layer, a second semiconductor layer, an active layer, a first transparent conductive layer, and a second transparent conductive layer. The first transparent conductive layer is formed on the second semiconductor layer. The second transparent conductive layer is formed on the first transparent conductive layer. The thickness of the first transparent conductive layer is less than that of the second transparent conductive layer. The density of the first transparent conductive layer is larger than that of the second transparent conductive layer. The disclosure further includes a method for manufacturing the LED. | 06-13-2013 |
20130256702 | LIGHT EMITTING DIODE WITH HIGH LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed on a top surface of the transparent conductive layer in the holes. The micro-structures refract light emitted from the light emitting structure and travelling through the transparent conductive layer. | 10-03-2013 |
20130292692 | LIGHT EMITTING DIODE - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence. | 11-07-2013 |
20130292693 | LIGHT EMITTING DIODE - An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the second n-type GaN layer faces towards the connecting layer and has a roughened exposed portion. The GaN on the bottom surface of the second n-type GaN layer has an N-face polarity. A blind hole extends through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer. An annular rough portion is formed on the bottom surface of the second n-type GaN layer and surrounds each blind hole. | 11-07-2013 |
20130320362 | HIGH VOLTAGE LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACUTING THE SAME - A high voltage LED package includes a substrate and LED chips formed on a top surface of the substrate. A periphery of each LED chip is roughened. The LED chips are electrically connected in series. | 12-05-2013 |
20140001494 | LIGHT EMITTING DIODE | 01-02-2014 |
20140001495 | LIGHT EMITTING DIODE LAMP | 01-02-2014 |
20140027806 | SEMICONDUCTOR OPTOELECTRONIC STRUCTURE WITH INCREASED LIGHT EXTRACTION EFFICIENCY - A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer. | 01-30-2014 |
20140099739 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE CHIP WITH ELECTRODES HAVING SMOOTH SURFACES - A method for manufacturing a light emitting diode chip includes the following steps: providing an epitaxial structure having an epitaxial layer; forming a first electrode and a second electrode on the epitaxial layer; coating an inert layer on the epitaxial structure, the first electrode and the second electrode continuously; annealing the first electrode and the second electrode; and removing the inert layer coated on the first electrode and the second electrode to expose the first electrode and the second electrode. | 04-10-2014 |
20140124808 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) includes a base, an LED die grown on the base, a transparent electrically conductive layer formed on a side of the LED die, a protecting layer covering the transparent electrically conductive layer, and a phosphor layer formed on the protecting layer. Through holes extend through the phosphor layer and the protecting layer to make part of light emitted from the LED die directly traveling out from the through holes to illuminate. A method for manufacturing the LED is also provided. | 05-08-2014 |
20140312299 | LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) includes a substrate, a semiconductor structure formed on the substrate, and two electrodes formed on the semiconductor structure. The semiconductor structure includes a bearing surface via which light generated by the semiconductor structure radiates out of the LED. A plurality of microstructures is formed on the bearing surface. A cross section of each microstructure is rectangular triangular having a vertical side surface. Each microstructure includes a top surface. The top surface is inclined relative to the bearing surface. | 10-23-2014 |
20140319561 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT TRANSMISSIVE ROUGHENED STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device includes a semiconductor light emitting chip and a transparent conductive layer formed on the semiconductor light emitting chip. The semiconductor light emitting chip includes a substrate, and a first semiconductor layer, an active layer and a second semiconductor layer successively formed on the substrate. The transparent conductive layer is formed on the second semiconductor layer. A first electrode and a second electrode are respectively arranged on the transparent conductive layer and the first semiconductor layer. The transparent conductive layer has a roughened structure. A method of manufacturing a semiconductor light emitting device is also provided. | 10-30-2014 |
20140342099 | METHOD OF PHOTOCURING A COATING FILM - A method of photocuring a coating film includes steps: providing a component, and coating the coating film on the component; then a pulse UV LED light source is used to irradiate the coating film to thereby solidify the coating film. During the on time of the pulse UV light source, it supplies a UV light with an enhanced intensity to the coating film to cause a top surface of the coating film to be cured quickly. Accordingly, a reaction between oxygen and free radicals in the coating film can be effectively avoided. | 11-20-2014 |
20140346540 | LIGHT EMITTING DIODE DIE - A light emitting diode (LED) die includes a first semiconductor layer, a second semiconductor layer, an active layer interposed between the first and second semiconductor layers, a transparent electrically conductive layer formed on the second semiconductor layer, and a passivation layer formed on the transparent electrically conductive layer. A first electrode is electrically connected with the first semiconductor layer, and a second electrode is is electrically connected with the second semiconductor layer. The transparent electrically conductive layer is made of tin doped indium oxide. The passivation layer is made of silicon nitride having a refractive index close to that of the transparent electrically conductive layer. | 11-27-2014 |
20140361245 | LED CHIP AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an LED chip includes: providing a laminated structure with a nanoimprinted material coated thereon; providing an imprinted mold with a patterned structure for pressing and curing the nanoimprinted material, removing the imprinted mold, etching the nanoimprinted material and the laminated structure; and forming electrodes on the etched laminated structure. An LED chip is also provided. | 12-11-2014 |
20150048305 | LED DIE AND METHOD OF MANUFACTURING THE SAME - An LED die includes a substrate, a light emitting structure, electrodes, a first transparent protecting layer, a reflection layer, and a second transparent protecting layer. The light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate. A part of first semiconductor layer being exposed. A first electrode is formed the first semiconductor layer. A second electrode is formed on the second semiconductor layer. The first transparent protecting layer, the reflection layer, and the second transparent protecting layer successively formed on the first electrode. The present disclosure also provides a method of manufacturing the LED die. | 02-19-2015 |
20150087099 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing a light emitting diode includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a transitional layer on the buffer layer, the buffer layer being made of InGaN; forming an epitaxial layer on the transitional layer; activating the transitional layer by a way of radiating the transitional layer using laser; and when radiated with a laser, the transitional layer separates from the epitaxial layer. | 03-26-2015 |