Patent application number | Description | Published |
20100219804 | METHODS AND APPARATUS FOR GENERATING VOLTAGE REFERENCES USING TRANSISTOR THRESHOLD DIFFERENCES - Methods and apparatus are described that develop a reference voltage that is based on a difference between a threshold voltage of a first transistor and a threshold voltage of a second transistor, and further based on a difference between a gate overdrive voltage of the first transistor and a gate overdrive voltage of the second transistor. | 09-02-2010 |
20100271894 | METHODS AND APPARATUS FOR EXTENDING THE EFFECTIVE THERMAL OPERATING RANGE OF A MEMORY - Apparatus and systems are provided for thermal regulation of a memory integrated circuit (“IC”). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element coupled to the thermal sensor. The heating element is adapted to heat the memory IC in response to a signal from the thermal sensor. Other aspects are also provided. | 10-28-2010 |
20110051504 | CREATING SHORT PROGRAM PULSES IN ASYMMETRIC MEMORY ARRAYS - The present invention provides methods and apparatus for adjusting voltages of bit and word lines to create short programming pulses to program a memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, switching the first line from the first voltage to a second voltage, and switching the first line from the second voltage to the first voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results. The switching operations together may create a first pulse. | 03-03-2011 |
20110051505 | REDUCING PROGRAMMING TIME OF A MEMORY CELL - The present invention provides methods and apparatus for adjusting voltages of bit and word lines to program a two terminal memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, and switching the first line from the first voltage to a second voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results. | 03-03-2011 |
20110051506 | FLEXIBLE MULTI-PULSE SET OPERATION FOR PHASE-CHANGE MEMORIES - Methods and apparatus are provided that include reading a plurality of sets of program pulse tuning instructions from a memory page, the memory page including a plurality of memory cells; and creating a plurality of program pulses in accordance with the plurality of sets of program pulses to program the plurality of memory cells. The plurality of sets of program pulse tuning instructions may be different from one another in at least one respect. | 03-03-2011 |
20110075466 | METHODS AND APPARATUS FOR USING A CONFIGURATION ARRAY SIMILAR TO AN ASSOCIATED DATA ARRAY - Methods, apparatus, and systems in accordance with this invention include memories that include a data array and a configuration array adapted to store configuration information for configuring the data array. The data array and the configuration array include a plurality of wordlines and a plurality of bitlines. The plurality of wordlines in the data array extend in the same direction as the plurality of wordlines in the configuration array. Likewise, the plurality of bitlines in the data array extend in the same direction as the plurality of bitlines in the configuration array. Numerous other aspects are disclosed. | 03-31-2011 |
20110292751 | METHODS AND APPARATUS FOR EXTENDING THE EFFECTIVE THERMAL OPERATING RANGE OF A MEMORY - Apparatus and systems are provided for thermal regulation of a memory integrated circuit (“IC”). The apparatus and systems may include a thermal sensor on a memory IC, and a heating element coupled to the thermal sensor. The heating element is adapted to heat the memory IC in response to a signal from the thermal sensor. Other aspects are also provided. | 12-01-2011 |
20120155163 | REDUCING PROGRAMMING TIME OF A MEMORY CELL - The present invention provides methods and apparatus for adjusting voltages of bit and word lines to program a two terminal memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, and switching the first line from the first voltage to a second voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results. | 06-21-2012 |
Patent application number | Description | Published |
20080239801 | Load Management for Memory Device - Methods and apparatus for managing electrical loads of electronic devices are disclosed. According to one embodiment, a current load imposed by an electronic device, such as a memory device (or memory system), can be measured. Then, using the measured current load, the memory device can determine whether (and to what extent) operational performance should be limited. By limiting operational performance, the memory device is able to limit its current load so as to satisfy a specification criterion or other requirement. The electrical load management is well suited for use in portable memory products (e.g., memory cards) to manage current loads being drawn. | 10-02-2008 |
20080239802 | Device with Load-Based Voltage Generation - Method and device for providing voltage generation with load-based control are disclosed. The voltage generation can be provided within an electronic device, such as a memory system that provides data storage. In one embodiment, an electrical load imposed on a generated voltage can be monitored and used to dynamically control strength of the generated voltage. For example, for greater electrical loads, the generated voltage can be provided with a greater strength, and for lesser electrical loads, the generated voltage can be provided with a lesser strength. By compensating the generated voltage for the nature of the imposed electrical load, the generated voltage can be provided in a stable manner across a significant range of loads. In the case of a memory system, stability in the generated voltage provides for reduced voltage ripple and thus improved sensing margins. The voltage generation is well suited for use in portable memory products (e.g., memory cards) to generate one or more internal voltages. | 10-02-2008 |
20080239836 | Method for Managing Electrical Load of an Electronic Device - Methods and apparatus for managing electrical loads of electronic devices are disclosed. According to one embodiment, a current load imposed by an electronic device, such as a memory device (or memory system), can be measured. Then, using the measured current load, the memory device can determine whether (and to what extent) operational performance should be limited. By limiting operational performance, the memory device is able to limit its current load so as to satisfy a specification criterion or other requirement. The electrical load management is well suited for use in portable memory products (e.g., memory cards) to manage current loads being drawn. | 10-02-2008 |
20080239856 | Method for Load-Based Voltage Generation - Method and device for providing voltage generation with load-based control are disclosed. The voltage generation can be provided within an electronic device, such as a memory system that provides data storage. In one embodiment, an electrical load imposed on a generated voltage can be monitored and used to dynamically control strength of the generated voltage. For example, for greater electrical loads, the generated voltage can be provided with a greater strength, and for lesser electrical loads, the generated voltage can be provided with a lesser strength. By compensating the generated voltage for the nature of the imposed electrical load, the generated voltage can be provided in a stable manner across a significant range of loads. In the case of a memory system, stability in the generated voltage provides for reduced voltage ripple and thus improved sensing margins. The voltage generation is well suited for use in portable memory products (e.g., memory cards) to generate one or more internal voltages. | 10-02-2008 |
20080247213 | Memory Device for Protecting Memory Cells during Programming - Improved circuitry and methods for programming memory cells of a memory device are disclosed. The improved circuitry and methods operate to protect the memory cells from potentially damaging electrical energy that can be imposed during programming of the memory cells. Additionally, the improved circuitry and methods operate to detect when programming of the memory cells has been achieved. The improved circuitry and methods are particularly useful for programming non-volatile memory cells. In one embodiment, the memory device pertains to a semiconductor memory product, such as a semiconductor memory chip or a portable memory card. | 10-09-2008 |
20090003109 | METHODS AND APPARATUS FOR EXTENDING THE EFFECTIVE THERMAL OPERATING RANGE OF A MEMORY - Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response to a signal from the thermal sensor. The methods may include sensing a temperature of a memory IC using an integrated thermal sensor on the memory IC and heating the memory IC, using an integrated heating element operatively coupled to the thermal sensor, if the sensed temperature is below a threshold temperature. | 01-01-2009 |
20090003110 | METHODS AND APPARATUS FOR EXTENDING THE EFFECTIVE THERMAL OPERATING RANGE OF A MEMORY - Systems, methods, and apparatus are provided for thermal regulation of a non-volatile memory IC. The systems and apparatus may include a thermal sensor on a memory IC; and a heating element coupled to the thermal sensor and adapted to heat the memory IC in response to a signal from the thermal sensor. The methods may include sensing a temperature of a memory IC using an integrated thermal sensor on the memory IC and heating the memory IC, using an integrated heating element operatively coupled to the thermal sensor, if the sensed temperature is below a threshold temperature. | 01-01-2009 |